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Method for preparing low-indium-content indium tin oxide film through co-doping tin and zinc

A technology of indium tin oxide and indium content, applied in ion implantation plating, metal material coating process, coating and other directions, can solve problems such as increase in resistivity and decrease in mobility, so as to reduce indium content and increase total doping. amount of effect

Inactive Publication Date: 2014-01-22
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, the amount of tin doped in commercial ITO is usually 4-6%wt, and the maximum cannot exceed 10%wt. Otherwise, the mobility will be reduced and the resistivity will be increased due to the introduction of too many carriers.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0015] b. Preparation of highly doped and low indium content ITO thin films: using magnetron sputtering technology, the background pressure is 1-7×10 -4 Pa; oxygen partial pressure 1-3×10 -2 Pa, sputtering pressure 0.1-1Pa; sputtering power 100-150w; heating temperature 380-420°C; sputtering time 20-30mins; sputtering bias 40-50v, the annealing process of the sample is a mixed atmosphere of oxygen and argon 380-420°C for 10-20min, then lowered to 180-200°C for 20-30min, then air-cooled to room temperature.

[0016] A high-quality ITO transparent conductive film with low indium content was prepared on a glass substrate. The co-doping amount of tin and zinc is 10%-25%wt, the preferred orientation along the (400) plane, the film thickness is uniform (~1300-1800nm), and the film resistivity is 2-9×10 -3 Ω.cm, light transmittance>90%. The In content is reduced from the usual 90%-96%wt to 75%-90%wt.

[0017] The substrates used include silicon, quartz, and alumina substrates in ...

example 1

[0018] Example 1 ITO thin film without doping Zn

[0019] Experimental parameters: background air pressure 5×10 -4 Pa; oxygen partial pressure 1×10 -2 Pa, sputtering pressure 0.1Pa; sputtering power 110w; heating temperature 385°C; sputtering time 20mins; sputtering bias 40v, the annealing process of the sample is: in a mixed atmosphere of oxygen and argon, hold at 380°C for 10min, then drop Incubate at 180°C for 20 minutes and then air cool to room temperature. A high-quality ITO transparent conductive film is prepared on a glass substrate with a film thickness of 1400nm. The light transmittance of the film is 95% in the visible light range, and the resistivity is ~2×10 -3 Ω.cm.

example 2

[0020] Example 2 tin and zinc co-doping amount is the ITO thin film of 10%wt

[0021] Experimental parameters: background air pressure 7×10 -4 Pa; oxygen partial pressure 2×10 -2 Pa, sputtering pressure 0.2Pa; sputtering power 150w; heating temperature 390°C; sputtering time 25mins; sputtering bias 40v, the annealing process of the sample is: in a mixed atmosphere of oxygen and argon, hold at 390°C for 15min, then drop Incubate at 190°C for 25 minutes and then air cool to room temperature. A high-quality ITO transparent conductive film with low indium content was prepared on a glass substrate. The film thickness is 1600nm. The light transmittance of the film is 92% in the visible light range, and the resistivity is ~8×10 -3 Ω.cm.

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Abstract

The invention discloses a method for preparing a low-indium-content indium tin oxide film through co-doping tin and zinc. The low-indium-content indium tin oxide ITO film is prepared through the magnetron sputtering technology. Used target materials are ITO ceramic targets with 4-10%wt of doped Sn. ZnO ceramic targets cover the target materials, wherein the diameter of the ZnO ceramic targets is 1-3cm. The thickness of the ZnO ceramic targets is 0.3-0.5cm. The purity of the ZnO ceramic targets is 99.0-99.99%wt. A low-indium-content high-quality ITO transparent conducting film is prepared on a glass substrate. The doping amount of tin and zinc is 10%-25%wt. Preferred orientation along (400) surface is adopted. The even thickness of the film is 1300-1800nm. The specific resistance of the film is 2-9*10-3 omega.cm. The light transmittance is larger than 90%, and the In content is 75%-90%wt. The method overcomes the limitation of preparing the ITO film through the single doping technology, namely, the largest doping amount of Sn can not surpass 10%. The method can realize effective compound dopping of electrons and electron holes, and greatly improves the dopping volume dose so as to reduce the indium content of the ITO membrane, and realize the purposes of reducing cost and protecting resource environments.

Description

technical field [0001] The invention belongs to the technical field of material preparation, in particular to a method for preparing a highly doped and low indium content ITO thin film. Background technique [0002] Indium tin oxide (tin-doped indium oxide film, ITO), as the most commercially and technically valuable transparent conductive oxide film, has been widely used in many high-tech fields, and the market demand has increased dramatically in recent years. Since indium is a highly toxic rare element with limited reserves, the price has soared in recent years, making research on reducing indium consumption, finding ITO substitute materials, and developing indium recovery and regeneration technologies more important and urgent. Usually, the amount of tin doped in commercial ITO is usually 4-6%wt, and the maximum cannot exceed 10%wt. Otherwise, the mobility will decrease and the resistivity will increase due to the introduction of too many carriers. The invention relates...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08
Inventor 郭新立贵宾华黄瑛刘建双
Owner SOUTHEAST UNIV
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