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Process for recovering crude indium and tin from ITO (indium tin oxide) waste target

A target material and thick indium technology, applied in the field of ITO waste target material utilization, can solve the problems of low indium recovery rate and high content of tin indium, achieve high production efficiency, reduce indium content, and improve recovery rate

Active Publication Date: 2014-12-10
GUANGXI HUAXI GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the method of recovering crude indium and tin from ITO waste targets generally adopts oxidation method or direct replacement method to separate indium and tin, and then recover indium, etc. The recovery rate of indium in this type of method is low, and the indium in tin high content

Method used

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  • Process for recovering crude indium and tin from ITO (indium tin oxide) waste target

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Embodiment Construction

[0020] Combine below figure 1 The present invention is described in further detail:

[0021] The present invention comprises the following steps:

[0022] (1) Crush the waste ITO target material into particles; the waste ITO target material generally comes from scraps, chips, waste products, etc. generated during the production process of the target material, which contains about 74% indium and 7.8% tin, and the rest is oxygen and Trace impurities. During the implementation process, the waste target material can be crushed into particles below 1cm by using a pulverizer, which facilitates the rapid dissolution of indium in the waste target material in hydrochloric acid.

[0023] (2) Add the above particles into an appropriate amount of hydrochloric acid solution, stir evenly, and heat to leaching; the concentration of the hydrochloric acid solution is preferably 8mol / L-10mol / L, this concentration can make the leaching rate of indium greater than 95%, while that of tin The le...

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Abstract

The invention relates to recovery of an ITO (indium tin oxide) waste target, and in particular relates to a process for recovering crude indium and tin from an ITO waste target. The process comprises the following steps: crushing the ITO waste target into particles, adding the particles into a proper hydrochloric acid solution, uniformly stirring, heating and leaching, adding sodium hydroxide and a sodium nitrate solution in leachate, adding leached slag in a hydrochloric acid solution, uniformly stirring, and oxidizing leachate, filtering the above solution, adding zinc in filtrate to replace sponge indium, leaching the residue again, recovering the leached residue, roasting to form crude tin; and boasting soda boiling sponge indium to form the crude indium. The sodium nitrate is used for oxidizing bivalent tin ions as stable tetravalent tin ions so as to completely separate the indium from tin, thereby reducing indium content in tin and improving the recovery rate of indium; and meanwhile, the zinc is used for replacing the indium, not only the operation is simple and the production efficiency is high, but also the replacement condition is easy to control.

Description

technical field [0001] The invention relates to the utilization of waste ITO targets, specifically a process for recovering thick indium and tin from waste ITO targets. Background technique [0002] Indium is an important material in the electronics industry, and has a wide range of applications in semiconductors, transparent conductive coatings, electronic devices, fluorescent materials, and atomic energy. Among them, ITO (indium tin oxide) is the main consumption field of indium, accounting for more than 70% of the total consumption. The leftovers, swarf, waste products, and waste targets after sputtering coating produced during the production of ITO powder targets are the largest sources of indium. Such waste targets mainly contain high-valent oxides of indium and tin, a small amount of low-valent oxides, and trace impurities. At present, the method of recovering crude indium and tin from ITO waste targets generally adopts oxidation method or direct replacement method t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22B7/00C22B25/06C22B58/00
CPCY02P10/20
Inventor 陈进中熊爱臣伍祥武吴伯增何焕全韩洪涛林东东甘振英
Owner GUANGXI HUAXI GRP CO LTD
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