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Light-emitting diode epitaxial wafer and growth method thereof

A technology of light-emitting diodes and growth methods, which is applied in the field of light-emitting diode epitaxial wafers and their growth, and can solve the problems that LED luminous efficiency needs to be improved.

Active Publication Date: 2021-04-02
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Embodiments of the present invention provide a light-emitting diode epitaxial wafer and its growth method, which can solve the problem that the luminous efficiency of LEDs in the prior art still needs to be improved

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  • Light-emitting diode epitaxial wafer and growth method thereof
  • Light-emitting diode epitaxial wafer and growth method thereof
  • Light-emitting diode epitaxial wafer and growth method thereof

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0027] An embodiment of the present invention provides a light emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the light-emitting diode epitaxial wafer includes a substrate 1, a buffer layer 2, an N-type semiconductor layer 3, an active layer 4, a P-type semiconductor layer 5 and a contact layer 6, and the buffer layer 2, the N-type semiconductor layer 3, and the active layer 4 , P-type semiconductor layer 5 and contact layer 6 are sequentially stacked on the substrate 1 .

[0028] figure 2 Schematic diagram of the structure of the contact layer provided by the embodiment of the present invention. se...

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Abstract

The invention discloses a growth method of a light emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The light emitting diode epitaxial wafer comprises a substrate,a buffer layer, an N-type semiconductor layer, an active layer, a P-type semiconductor layer and a contact layer, wherein the buffer layer, the N-type semiconductor layer, the active layer, the P-type semiconductor layer and the contact layer are sequentially laminated on the substrate; the contact layer comprises a plurality of composite structures which are sequentially stacked; each compositestructure comprises a first sub-layer, a second sub-layer and a third sub-layer which are sequentially stacked, each first sub-layer is made of magnesium-doped gallium nitride, each second sub-layer is made of non-doped gallium nitride, and each third sub-layer is made of magnesium-and indium-doped gallium nitride. According to the invention, the overall luminous efficiency of the LED can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a growth method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor diode that can convert electrical energy into light energy. As an efficient, environmentally friendly, and green new solid-state lighting source, LEDs are rapidly and widely used in traffic lights, automotive interior and exterior lights, urban landscape lighting, mobile phone backlights and other fields. The core component of LED is the chip, and improving the luminous efficiency of the chip is the goal that is constantly pursued in the process of LED application. [0003] The chip includes an epitaxial wafer and electrodes provided on the epitaxial wafer. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-ty...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/04H01L33/12H01L33/14
Inventor 从颖姚振胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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