The application provides a
silicon-on-insulator structure and a forming method thereof, and the forming method of the
silicon-on-insulator structure increases the room-temperature
bonding strength during a
bonding process through an activation treatment, reduces the temperature required in a subsequent reinforcement process, thereby reducing the thermal
diffusion of heterogeneous components in the
etching stop layer, ensuring the clear interface between the
etching stop layer and a device layer, and further avoiding the deterioration of the thickness uniformity of the device layer after the
etching stop layer is removed in the subsequent process; the uniformity of the device layer after etching is controlled through two selective etching processes, so that the thickness uniformity of the device layer of the finally obtained
silicon-on-insulator structure is less than 10%; and the formation and removal of a sacrificial
oxide layer make the surface of the device layer not have a
porous morphology of high-frequency etching undulation.