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3 results about "Porous morphology" patented technology

The morphology of the porous network in porous SiC has been studied. It has been found that pore formation starts with a few pores on the surface and then the porous network grows in a V-shaped branched structure below the surface. The hydrogen etching rates of porous and nonporous SiC have been measured.

A high specific surface area high tap density small particle ternary precursor, a preparation method thereof, a positive electrode material and a lithium ion battery

This application provides a high specific surface area, high tap density small-particle ternary precursor, its preparation method, cathode material, and lithium-ion battery, relating to the field of lithium-ion batteries. It includes a core and a first coating layer and a second coating layer sequentially disposed on the surface of the core; the core is a secondary particle formed by the stacking of multiple primary particles; the first and second coating layers are each independently formed by alternating layers of sheet-like primary particles; the sheet-like primary particles of the first coating layer are shorter than those of the second coating layer. The high specific surface area, high tap density small-particle ternary precursor exhibits a porous morphology with a loose interior and a relatively dense exterior, increasing porosity and specific surface area. Simultaneously, the relatively dense surface structure improves the tap density of the precursor. This morphology, when sintered into a cathode material, is beneficial for lithium-ion electron transport.
Owner:JINCHI ENERGY MATERIALS CO LTD +2

A silicon-on-insulator structure and method of forming the same

ActiveCN115513123BAvoid deterioration of thickness uniformityEnsure the interface is clearEtchingBonding process
The application provides a silicon-on-insulator structure and a forming method thereof, and the forming method of the silicon-on-insulator structure increases the room-temperature bonding strength during a bonding process through an activation treatment, reduces the temperature required in a subsequent reinforcement process, thereby reducing the thermal diffusion of heterogeneous components in the etching stop layer, ensuring the clear interface between the etching stop layer and a device layer, and further avoiding the deterioration of the thickness uniformity of the device layer after the etching stop layer is removed in the subsequent process; the uniformity of the device layer after etching is controlled through two selective etching processes, so that the thickness uniformity of the device layer of the finally obtained silicon-on-insulator structure is less than 10%; and the formation and removal of a sacrificial oxide layer make the surface of the device layer not have a porous morphology of high-frequency etching undulation.
Owner:ZING SEMICON CORP +1

Porous positive electrode precursor, composite positive electrode material, and preparation method and application thereof

PendingCN122276856Ashorten the growth cycleevenly distributedComposite cathodeSalt solution
This invention provides a porous cathode precursor, a composite cathode material, its preparation method, and its application. The preparation method of the porous cathode precursor includes the following steps: co-precipitating a ternary mixed metal salt solution, a complexing agent solution containing citrate, a precipitant solution, and an oxidant solution into a reaction substrate to obtain a half-step precursor material; and pre-sintering the half-step precursor material to obtain the porous cathode precursor. The cathode precursor prepared by the method provided by this invention has a hollow porous morphology, which is beneficial for improving the cycle performance and rate performance of the ternary cathode material.
Owner:JINGMEN GEM NEW MATERIAL CO LTD +1