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Zinc-doped tin oxide transparent conductive thin film and preparation method and application thereof

A transparent conductive film, tin oxide technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of high carrier concentration and electron mobility, low resistivity and sheet resistance, thermal stability Insufficient chemical resistance and acid resistance, etc., to achieve high carrier concentration and electron mobility, low resistivity and sheet resistance, and improve chemical stability.

Pending Publication Date: 2020-09-25
SHENZHEN PLANCK INNOVATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The zinc-doped tin oxide transparent conductive film of the present invention uses common and easily available zinc as the doping element, which can not only solve the problems of toxicity and rarity of the elements used for doping in the existing transparent conductive film, but also has relatively high Low resistivity and surface resistance, high carrier concentration and electron mobility, excellent thermal stability and chemical stability against acid corrosion, high light transmittance in the visible-mid-infrared region, etc., especially can solve the existing Insufficient thermal stability and acid resistance of indium tin oxide transparent conductive film

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  • Zinc-doped tin oxide transparent conductive thin film and preparation method and application thereof
  • Zinc-doped tin oxide transparent conductive thin film and preparation method and application thereof
  • Zinc-doped tin oxide transparent conductive thin film and preparation method and application thereof

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Embodiment 1

[0070] This embodiment provides a method for preparing a zinc-doped tin oxide transparent conductive film, the preparation method comprising the following steps:

[0071](1) Choose a glass sheet with a thickness of 1.1mm as the substrate, and cut it into a size of 10mm×10mm, and then carry out ethanol cleaning, deionized water cleaning and drying on the substrate as pretreatment, wherein, first Ultrasonic cleaning in ethanol for 15 minutes, then ultrasonic cleaning in deionized water for 15 minutes, and then drying it with nitrogen gas with a purity ≥ 99.999%, and then placing the substrate on a substrate tray in a vacuum reaction chamber; Tin is used as the organic tin source and placed in a stainless steel bubbler, and the freezing solution is used for freezing treatment, and the temperature of the freezing treatment is controlled at 10°C; diethyl zinc is used as the organic zinc source and placed in another stainless steel bubbler , use freezing liquid to carry out freezing...

Embodiment 2

[0076] This embodiment provides a method for preparing a zinc-doped tin oxide transparent conductive film, the preparation method comprising the following steps:

[0077] (1) Choose a quartz sheet with a thickness of 1.1mm as the substrate, and cut it into a size of 50mm×50mm, and carry out ethanol cleaning, deionized water cleaning and drying on the substrate successively as pretreatment, wherein, first Ultrasonic cleaning in ethanol for 20 minutes, then ultrasonic cleaning in deionized water for 20 minutes, then blowing it dry with nitrogen gas with a purity ≥ 99.999%, and then placing the substrate on a substrate tray in a vacuum reaction chamber; Tin is used as the organic tin source and placed in a stainless steel bubbler, and the freezing solution is used for freezing treatment, and the temperature of the freezing treatment is controlled at 15°C; diethyl zinc is used as the organic zinc source and placed in another stainless steel bubbler , use freezing liquid to carry o...

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Abstract

The invention relates to a zinc-doped tin oxide transparent conductive thin film and a preparation method and application thereof. The Zn doping concentration in the zinc-doped tin oxide transparent conductive thin film is 0-12 at% and does not include 0 at%, and the preparation method of the zinc-doped tin oxide transparent conductive thin film is a metal organic chemical vapor deposition method.According to the zinc-doped tin oxide transparent conductive thin film, common and easily available zinc is selected as a doping element, so that the problems of toxicity, rare property and the likeof the doping element of an existing transparent conductive thin film can be solved; the zinc-doped tin oxide transparent conductive thin film also has the advantages of relatively low resistivity andsurface resistance, relatively high carrier concentration and electron mobility, excellent thermal stability and chemical stability of acid corrosion resistance, high light transmittance of a visible-intermediate infrared region and the like; and particularly the problem that an existing indium tin oxide transparent conductive thin film is insufficient in thermal stability and acid resistance canbe solved. In addition, the preparation method is simple to operate, low in raw material cost and suitable for large-scale popularization.

Description

technical field [0001] The invention relates to the field of semiconductor material science, in particular to a zinc-doped tin oxide transparent conductive film and its preparation method and application. Background technique [0002] Transparent Conductive Oxide (TCOs for short) is a class of semiconductor functional materials widely used, mainly including oxides of In, Sn, Zn and Cd and their composite multi-element oxides. The transparent conductive film prepared by using transparent conductive oxide has optoelectronic properties such as wide band gap, high light transmittance in the visible-near-infrared spectrum region, and low resistivity. It has become a key material in optoelectronic related applications and can be widely used in Liquid crystal and organic display, solar photovoltaic, photodetector, electrochromic device, low-radiation energy-saving glass, electromagnetic shielding, defrosting and defogging glass and other fields. [0003] In recent years, new optoe...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/02
CPCC23C16/407C23C16/0227
Inventor 孙小卫赵俊亮
Owner SHENZHEN PLANCK INNOVATION TECH CO LTD
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