17 results about "Zinc atom" patented technology

A hydrophobic conductive film (10), a preparation method therefor, and a use thereof, relating to the technical field of semiconductor preparation. The method comprises the following steps: 1) performing a pre-zincation treatment on a surface of a substrate (20), and forming a saturated zinc atom layer (11); 2) alternately feeding a zinc precursor and an oxygen precursor into a reaction chamber and introducing an inert gas for purging, and growing a zinc oxide film layer (12) on a surface of the saturated zinc atom layer (11); 3) performing a post-zincation treatment on the zinc oxide film layer (12) to form a zincated transition layer (13); 4) performing a fluorination post-treatment on the zincated transition layer (13) and forming a zinc fluoride surface layer (14). The prepared hydrophobic conductive film (10) has the characteristics of strong hydrophobicity, good adhesion to the substrate, high film reliability, good film density, precise and controllable thickness, good film uniformity, high step coverage, and high optical transmittance. Compared with microstructures, the hydrophobic conductive film has greater stability, is compatible with various semiconductor packaging processes, effectively resists environmental interference, and can be applied in various hydrophobic scenarios.

A semiconductor nanoparticle, a method for producing the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. The semiconductor nanoparticle includes a template crystal including a zinc chalcogenide and is cadmium-free. The template crystal includes zinc-chalcogen bilayers stacked in a [111] direction. In high-resolution scanning transmission electron microscopy analysis, the template crystal includes a first zone, a second zone, and a mirror zone disposed between the first zone and the second zone. The mirror zone includes at least one mirror plane where a reversal occurs in the atomic arrangement direction of zinc and chalcogen elements between adjacent zinc-chalcogen bilayers. In the zinc-chalcogen bilayers of the first zone, zinc atoms and chalcogen element atoms are arranged in a first direction. In the zinc-chalcogen bilayers of the second zone, zinc atoms and chalcogen element atoms are arranged in a second direction.

The application aims to provide a method for loading zinc atom clusters on the surface of ruthenium nanoparticles by breaking Zn-N bonds based on H2 thermal drive and application, and belongs to the technical field of preparation of nanometer catalytic materials; the method takes a double-limiting material containing coordination limited Zn-N4 and narrow hole limited Ru clusters as a precursor, thereby ensuring uniform dispersion and close proximity of initial active sites; H2 is used as a key inducer, active hydrogen species generated by catalytic cracking of hydrogen by ruthenium sites is used, and hydrogen overflow effect is used to realize the breaking of thermodynamically stable Zn-N bonds; high-mobility Zn atoms are obtained and finally selectively captured on the surface of Ru nanoparticles; Zn species diffuse, nucleate and grow on the surface of Ru crystals to form sub-nanometer scale Zn atom clusters through self-assembly; and the material can improve the intrinsic catalytic activity and stability of Ru-based catalysts and provide a new way for efficient energy conversion.

Provided is an article having, on a substrate, a coating film that satisfies (1) to (4). (1) A gray scale image of a cross-sectional STEM image shows a laminated structure in which a low-luminance region and a high-luminance region are alternately laminated. (2) Cross-sectional observation by STEM-EDX detects oxygen, zinc and iron. (3) Cross-sectional observation by STEM-EDX reveals that the EDX intensity ratio (Zn / Fe) of iron and zinc in a region observed as the low-luminance region is higher than the EDX intensity ratio (Zn / Fe) in a region observed as the high-luminance region. (4) The percentage of iron atoms relative to the total of zinc atoms and the iron atoms contained in the coating film is more than 0.4 at%.

The present invention discloses a semiconductor laser preparation method and a semiconductor laser, and relates to the technical field of semiconductor lasers. The semiconductor laser preparation method comprises: providing a laser chip; placing the laser chip in a vacuum environment at a preset temperature; growing a zinc atomic layer on the cavity surface of the laser chip; ionizing the zinc atomic layer to generate zinc ions, so as to induce the zinc ions to diffuse from the cavity surface to the region of the quantum well layer of the laser chip close to the cavity surface. The semiconductor laser preparation method provided by the present invention has the characteristics of higher quantum well intermixing efficiency, better intermixing quality, and simple and quick operation steps.

A container for storing a chemical fluid for manufacturing an electronic material, in which after an inspection solution charges the container and stored at 25° C. for 30 days, a sum of a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the inspection solution is 100 ppt or less.

The invention discloses a nano composite zincizing ball-milling agent and application thereof. The zincizing agent contains 80%-95% of nano zinc powder, 2%-10% of an activating agent, 1%-8% of a diffusion accelerant and 0.5%-5% of an anti-binding agent, wherein the particle size of the nano zinc powder is 50-100 nm, and the purity of the nano zinc powder is larger than 99.9%. During application, through mechanical activation and 300-420 DEG C low-temperature thermal diffusion coupling, zinc atoms and an iron matrix form a metallurgically bonded zinc-iron alloy layer. According to the technology, the defects of an existing process are overcome, the coating is uniform and compact, the binding force is high, red rust and hydrogen embrittlement do not exist in a neutral salt spray test for more than or equal to 1000 hours, energy is saved, environment friendliness is achieved, the applicability is wide, long-acting anti-corrosion protection can be provided for materials such as high-strength steel, and green and high-end upgrading of the surface treatment industry is promoted.

To provide an article having a zinc oxide-containing coating film that is capable of blocking a broad spectrum of light rays (ultraviolet and high-energy visible light).SOLUTION: Provided is an article having, on a substrate, a coating film that satisfies (1) to (4). (1) A gray scale image of a cross-sectional STEM image shows a laminated structure in which a low-luminance region and a high-luminance region are alternately laminated. (2) Cross-sectional observation by STEM-EDX detects oxygen, zinc and iron. (3) Cross-sectional observation by STEM-EDX reveals that the EDX intensity ratio (Zn / Fe) of iron and zinc in a region observed as the low-luminance region is higher than the EDX intensity ratio (Zn / Fe) in a region observed as the high-luminance region. (4) The percentage of iron atoms relative to the total of zinc atoms and the iron atoms contained in the coating film is more than 0.4 atom%.SELECTED DRAWING: None

The application relates to a kind of fusion porphyrin axial modification Ti3C2T x Nonlinear optical nanohybrid materials, their preparation and use, the nanohybrid materials are fused porphyrin by the zinc atom of ring center and covalently connected on the surface of Ti3C2T x The nitrogen atom on the pyridine ring on the surface of nanosheet forms a coordination bond. Compared with single functional components, the nanohybrid material TFP-Ti3C2T x Both nanosecond pulsed light at 532 nm and femtosecond pulsed light at 800 nm exhibit significantly enhanced optical limiting effect. The application develops a surface chemical modification strategy for titanium carbide MXene, and the obtained nanohybrid material exhibits optical limiting performance in cross-time domain and spectral domain, which has the potential to be applied to modern photonic or optoelectronic devices.

The application belongs to the technical field of aqueous batteries, and particularly relates to an alkyl glycoside aqueous zinc ion battery electrolyte, a preparation method and application thereof. The electrolyte comprises a solvent water, an electrolyte and an additive; and the additive is an alkyl glycoside. The alkyl glycoside additive with double adsorption functions for zinc ions and a zinc metal (002) crystal surface is added in the electrolyte. The additive not only can break the close combination of a water sheath layer [Zn(H2O)6] 2+ ] in a traditional aqueous electrolyte and zinc ions, prevent water molecules from contacting the zinc metal, and thus relieve the hydrogen evolution corrosion reaction of the zinc metal, but also can have a higher adsorption energy for the zinc metal (002) crystal surface than for a (100) crystal surface, so as to guide the zinc ions to be more reduced and deposited on the (002) crystal surface, and the zinc atoms mainly grow horizontally on the zinc metal (002) crystal surface, and thus the generation of zinc dendrites is avoided.

The invention provides a resin composition and a preparation method thereof, a film material, a semiconductor packaging structure and a preparation method thereof, a semiconductor device and electronic equipment. The resin composition comprises resin, acid anhydride and a metal compound, the metal compound comprises a metal atom and an organic ligand coordinated with the metal atom; the metal atoms are selected from one or two of zinc atoms and cobalt atoms; the organic ligand comprises benzimidazole, or the organic ligand comprises benzimidazole and 2-methylimidazole; wherein the metal atoms are in coordination connection with nitrogen atoms in the organic ligands. The resin composition can maintain a relatively long low viscosity duration under a preheating process, and when the resin composition is applied to the field of semiconductor packaging, not only can a cured product meet the mechanical property requirement, but also the risk of warping of a semiconductor packaging structure can be effectively reduced, so that high-reliability semiconductor devices can be manufactured, and the service life of the semiconductor devices is prolonged. And the manufacturing of large-size and high-reliability semiconductor devices is facilitated.

An object is to provide an metal complex oxide having excellent thermal conductivity and dielectric properties, a resin composition containing the metal complex oxide and capable of expressing excellent thermal conductivity and dielectric properties, and a molded product thereof. Specifically, a gahnite particle that includes zinc atoms, aluminum atoms, and oxygen atoms, and molybdenum atoms and has a dielectric loss tangent of 1.0×10−3 or less at 1 GHz is used.

The application provides an activator for a rubber vulcanization reaction and a preparation method and application thereof, and belongs to the technical field of catalysts. The activator for the rubber vulcanization reaction comprises a carrier and zinc oxide. The carrier is a nanomaterial doped with a nonmetallic element. The zinc oxide is anchored to the outer surface of the carrier. The zinc oxide is coordinated with the nonmetallic element doped on the outer surface of the carrier to form a monatomic layer in the form of fully exposed sub-nanoclusters. The zinc atoms are not overlapped and are anchored to the outer surface of the carrier in the form of dispersed fully exposed sub-nanoclusters by coordination of the zinc oxide and the nonmetallic element doped on the outer surface of the carrier, so that the zinc atoms can be fully exposed to serve as active centers and improve catalytic activity. The activator can be applied to the vulcanization reaction in the rubber field, improves the vulcanization reaction efficiency, and can reduce the zinc consumption by 70-80% due to the full exposure of the zinc atoms, thereby saving industrial energy consumption and metal resources.

A container for storing a chemical fluid for manufacturing an electronic material, in which after an inspection solution charges the container and stored at 25° C. for 30 days, a sum of a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the inspection solution is 100 ppt or less.

A semiconductor nanoparticle, a method for manufacturing the semiconductor nanoparticle, and a light emitting device including the semiconductor nanoparticle. The semiconductor nanoparticles include a template crystal, which includes a zinc chalcogenide and does not include cadmium. The template crystal includes zinc chalcogenide bilayers stacked in a [111] direction. In high resolution scanning transmission electron microscope analysis, a template crystal includes a first region, a second region, and a mirror region disposed between the first region and the second region. The mirroring region includes at least one mirroring plane in which inversion occurs in an atomic arrangement direction of zinc and chalcogens between adjacent zinc chalcogen bilayers. In the zinc-chalcogen bilayer in the first region, zinc atoms and chalcogen atoms are arranged in a first direction. In the zinc-chalcogen bilayer in the second region, zinc atoms and chalcogen atoms are arranged in a second direction.

Provided is an immobilized zinc complex comprising at least:a compound represented by general formula (1)(where R1 and R2 each represent a monovalent hydrocarbon group, R3 represents a divalent hydrocarbon group, R4 to R7 each represent a hydrogen atom or monovalent hydrocarbon group, R4 and R5, R6 and R7, or R4 and R6 may be combined with each other to form a ring, and n represents an integer of 0-2);a zinc halide represented by general formula (2)(where X represents a halogen atom); andan inorganic carrier, wherein silicon atoms, in the zinc complex having a guanidine ligand, in which a nitrogen atom in the compound represented by general formula (1) and a zinc atom in the zinc halide are bonded via a coordinate bond, are immobilized via covalent bonds with oxygen atoms on the surface of the inorganic carrier. The immobilized zinc complex can provide a cyclic carbonate compound at a good yield under mild conditions such as ambient pressure and / or room temperature conditions, and can be easily recovered and reused after the reaction.