High-carrier concentration ultrathin AZO transparent conducting thin film and preparation method thereof

A transparent conductive film, high carrier technology, applied in the conductive layer on the insulating carrier, ion implantation plating, coating, etc., can solve the problem of low carrier concentration of ultra-thin AZO film

Active Publication Date: 2014-06-18
宁波海燕新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of low carrier concentration of ultra-thin AZO film prepared by magnetron sputtering at low temperature, the invention provides a film of ultra-thin AZO transparent conductive oxide with high carrier concentration and its preparation method

Method used

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  • High-carrier concentration ultrathin AZO transparent conducting thin film and preparation method thereof
  • High-carrier concentration ultrathin AZO transparent conducting thin film and preparation method thereof
  • High-carrier concentration ultrathin AZO transparent conducting thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Aluminum oxide (Al 2 o 3 ) and zinc oxide (ZnO) with a mass ratio of Al 2 o 3 :ZnO=2:98 self-made AZO ceramic target (ie Al 2 o 3 AZO ceramic target with a mass percentage of 2%), and a commercial zinc (Zn) metal target with a purity of 99.99%, which are loaded into the vacuum chamber of the ultra-high vacuum magnetron sputtering equipment;

[0054] Select the ultra-white glass substrate as the substrate. After the usual cleaning conditions, the glass substrate is cleaned with ultraviolet ozone. The conditions for ultraviolet ozone cleaning are: the power of the VUV low-pressure ultraviolet mercury lamp is 60W, the treatment time is 1h, and the treatment temperature is 40°C, and then put it into the vacuum chamber of ultra-high vacuum magnetron sputtering equipment;

[0055] Use a mechanical pump and a molecular pump to evacuate the vacuum chamber, and keep the vacuum degree of the vacuum chamber (that is, the background vacuum degree) at 3.0×10 -4 Pa, do not heat...

Embodiment 2

[0063] Aluminum oxide (Al 2 o 3 ) and zinc oxide (ZnO) with a mass ratio of Al 2 o 3 :ZnO=2:98 self-made AZO ceramic target (ie Al 2 o 3 AZO ceramic target with a mass percentage of 2%), and a commercial Zn metal target with a purity of 99.99%, which are loaded into the vacuum chamber of the ultra-high vacuum magnetron sputtering equipment;

[0064] Select the ultra-clear glass substrate as the substrate. After the usual cleaning conditions, the glass substrate is cleaned with ultraviolet ozone. The conditions for ultraviolet ozone cleaning are: the power of the VUV low-pressure ultraviolet mercury lamp is 80W, the treatment time is 1.5h, and the treatment temperature 50°C, and then put it into the vacuum chamber of ultra-high vacuum magnetron sputtering equipment;

[0065] Use a mechanical pump and a molecular pump to evacuate the vacuum chamber, and keep the vacuum degree of the vacuum chamber (that is, the background vacuum degree) at 4.0×10 -4 Pa, heat the substrate ...

Embodiment 3

[0073] Aluminum oxide (Al 2 o 3 ) and zinc oxide (ZnO) with a mass ratio of Al 2 o 3 :ZnO=2:98 self-made AZO ceramic target (ie Al 2 o 3 AZO ceramic target with a mass percentage of 2%), and a commercial Zn metal target with a purity of 99.99%, which are loaded into the vacuum chamber of an ultra-high vacuum magnetron sputtering equipment;

[0074] Select the ultra-white glass substrate as the substrate. After the usual cleaning conditions, the glass substrate is cleaned with ultraviolet ozone. The conditions for ultraviolet ozone cleaning are: the power of the VUV low-pressure ultraviolet mercury lamp is 60W, the treatment time is 1.5h, and the treatment temperature 40°C, and then put it into the vacuum chamber of ultra-high vacuum magnetron sputtering equipment;

[0075] Use a mechanical pump and a molecular pump to evacuate the vacuum chamber, and keep the vacuum degree of the vacuum chamber (that is, the background vacuum degree) at 2.0×10 -4 Pa, the substrate is hea...

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Abstract

The invention discloses a high-carrier concentration ultrathin AZO transparent conducting thin film and a preparation method thereof. The ultrathin AZO transparent conducting thin film comprises a substrate, a zinc layer and an AZO layer in sequence from top to bottom, wherein the total thickness of the zinc layer and the AZO layer is less than 120nm; the thickness of the zinc layer is 2-10nm; the thickness of the AZO layer is 35-100nm. According to the high-carrier concentration ultrathin AZO transparent conducting thin film and the preparation method thereof, deposition is carried out on the substrate by using magnetron sputtering to obtain the zinc layer and the AZO layer; rapid annealing is carried out on the thin film after the deposition; by virtue of setting the annealing condition, zinc atoms in the zinc layer permeate into the AZO layer and form Zni defects so as to improve the carrier concentration; the deposition temperature of the zinc layer and the AZO layer is not higher than 200 DEG C in the deposition process so that the production energy consumption is saved, the production cost is reduced and the production efficiency is improved; the high-carrier concentration ultrathin AZO transparent conducting thin film and the preparation method thereof are suitable for industrial production. The specific resistance of the high-carrier concentration ultrathin AZO transparent conducting thin film is 13-3.8*10<-4>omega.cm, the carrier concentration is 5.0-13.8*10<20>cm<-3>, and the average transmittance (including the substrate) at the wave section of 380-800nm is 70-88%.

Description

technical field [0001] The invention relates to the technical field of transparent conductive oxide films, in particular to an ultra-thin AZO transparent conductive film with high carrier concentration and a preparation method thereof. Background technique [0002] Transparent conductive oxide (TCO) thin films have been extensively studied in the field of flat panel displays due to their high light transmission and electrical conductivity. Minami et al. (Present status and future prospects for development of non-or reduced-indium transparent conducting oxide thin films, Thin Solid Films, 2008, 517, 1474-1477) pointed out that TCO films used in the field of flat panel display should be in Prepared at a substrate temperature lower than 200°C, with a thickness of less than 200nm and a resistivity of less than 5×10 -4 Ω·cm films. Tin-doped indium oxide (ITO) has the best conductivity and light transmission properties to meet this requirement and become the dominant material. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/08C23C14/58H01B5/14
Inventor 杨晔王木钦黄金华兰品军宋伟杰
Owner 宁波海燕新材料有限公司
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