Preparation method of nitrogen-doped zinc oxide film

Abstract

The invention relates to the technical field of zinc oxide preparation, and in particular relates to a preparation method of a nitrogen-doped zinc oxide film. The preparation method comprises: placing a silicon substrate in the reaction cavity of atomic layer deposition (ALD) equipment; introducing gas containing a zinc source into the reaction cavity of the ALD equipment, wherein the zinc atoms in the gas containing the zinc source are adsorbed to the silicon substrate; conveying hydrogen to the reaction cavity of the ALD equipment based on nitrogen as a carrier gas, and simultaneously carrying out plasma discharge; introducing an oxygen-containing source to the reaction cavity of the ALD equipment, wherein the zinc atoms which do not react with nitrogen atoms form zinc-oxygen bonds withthe oxygen atoms in the oxygen-containing source; and repeating the steps, so as to grow the zinc oxide film containing the nitrogen atoms layer by layer. In the preparation method provided by the invention, nitrogen doping is carried out on the zinc oxide film by utilizing the ALD equipment; the method is simple and practicable; by utilizing the characteristic of atomic layer deposition and single-layer cycle growth, the uniform nitrogen doping in the whole film structure can be achieved in the process of zinc oxide film growth so that the doped film is complete in structure and excellent inproperty.

Description

technical field [0001] The invention relates to the technical field of zinc oxide preparation, in particular to a method for preparing a nitrogen-doped zinc oxide thin film. Background technique [0002] ZnO thin film is an important photoelectric device material, and it is an important research direction in the field of optoelectronics after GaN. It is a direct bandgap material with wide bandgap, hexagonal wurtzite structure, and exciton binding energy up to 60meV. Due to the existence of defects in intrinsic ZnO, ZnO is n-type, and it is difficult to prepare p-type thin films. The theoretical calculation of nitrogen doping makes the preparation of p-type ZnO possible. At present, the thin film has been prepared by pulsed laser deposition, metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy and other methods. while N 2 , NO, NH 3 and other gases as nitrogen sources have also been studied. However, the methods currently used are more complicated in...

AI Technical Summary

Problems solved by technology

However, the methods currently used are more complicated, and the effect is not very ideal. The N atoms doped into the molecular gap are more than the N atoms that replace O. Therefore, another method is needed to convert the doped N atoms Injected into the molecular structure by growth

Images