Gete/sb type superlattice phase change thin film material for high-speed phase change memory and preparation method thereof

A phase-change memory and thin-film material technology, which is applied in metal material coating technology, ion implantation plating, coating, etc., can solve the problems of unfavorable memory, slowing down of phase change speed, and slowing down the crystallization speed of materials, so as to reduce heat loss. Conductivity, inhibition of crystallization, and effect of grain size reduction
CN104795494BInactive Publication Date: 2018-04-13JIANGSU UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
JIANGSU UNIV OF TECH
Publication Date
2018-04-13
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a GeTe / Sb superlattice phase change thin film material used for high-speed phase change memory. A layer of Sb is used as an alternating period, and the GeTe layer of the latter alternating period is deposited on the Sb layer of the previous alternating period. Tests have proved that the time for the sudden change in the reflectivity of the GeTe / Sb class superlattice phase-change thin film material of the present invention is about 5.3ns, and the time for the sudden change in the reflectivity of the single-layer Ge2Sb2Te5 traditional phase-change thin film material is about 39ns; Compared with the traditional single-layer Ge2Sb2Te5 phase-change thin-film material, the phase-change thin-film material of the present invention has a faster phase-change speed, thereby making the phase-change memory prepared with it have a faster operating speed, which is conducive to improving the read and write performance of PCRAM information. speed.
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Description

technical field

[0001] The invention relates to a phase-change thin film material in the field of microelectronics, in particular to a GeTe / Sb superlattice phase-change thin film material used for a high-speed phase-change memory and a preparation method thereof. Background technique

[0002] Phase-change memory (PCRAM) is a new type of non-volatile memory that uses the huge resistance difference between the crystalline and amorphous states of materials to store information. When the phase change material has a higher resistance in the amorphous state and a lower resistance in the crystalline state, the resistance difference between the two states reaches more than 2 orders of magnitude. The rapid transition of phase-change materials between two resistive states can be achieved through current-induced Joule heating. PCRAM has the advantages of strong stability, low power consumption, high storage density, and compatibility with traditional CMOS processes, so it has attracte...

Claims

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