Gete/sb type superlattice phase change thin film material for high-speed phase change memory and preparation method thereof
A phase-change memory and thin-film material technology, which is applied in metal material coating technology, ion implantation plating, coating, etc., can solve the problems of unfavorable memory, slowing down of phase change speed, and slowing down the crystallization speed of materials, so as to reduce heat loss. Conductivity, inhibition of crystallization, and effect of grain size reduction
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Embodiment 1)
[0030]The GeTe / Sb superlattice phase change thin film material used in the high phase change memory of this embodiment is a multilayer composite film structure with a thickness of 6-80nm; it is composed of GeTe layers and Sb layers alternately deposited, that is, in the thin film Among them, the GeTe layer-Sb layer-GeTe layer-Sb layer... order is repeated and alternately arranged.
[0031] A GeTe layer and a Sb layer are used as an alternating cycle, and the GeTe layer of the latter alternate cycle is deposited on the Sb layer of the previous alternate cycle. The GeTe layer contains two elements, Ge and Te, and the atomic ratio of Ge and Te is 1:1.
[0032] The general formula [GeTe (a) / Sb (b)] for the film structure of above-mentioned Ge Te / Sb class superlattice phase change film material x where a is the thickness of the single-layer GeTe layer, 1nm≤a≤50nm; b is the thickness of the single-layer Sb layer, 1nm≤b≤50nm; x is the number of alternating periods of the GeTe layer ...
Embodiment 2)
[0046] The film structure of the GeTe / Sb class superlattice phase change film material used for high phase change memory of the present embodiment is [GeTe (5nm) / Sb (4nm)] 6 , that is, the thickness of each layer of GeTe layer is 5nm, the thickness of each layer of Sb layer is 4nm, the number of alternating periods of GeTe layer and Sb layer is 6, and the thickness of GeSb superlattice phase change thin film material is 54nm.
[0047] The rest of the preparation method is the same as that of Example 1, except that: Step ③ When preparing GeTe / Sb superlattice phase change thin film material by magnetron sputtering, the sputtering time of each layer of Sb is 16s.
Embodiment 3)
[0049] The film structure of the GeTe / Sb class superlattice phase change film material used for high phase change memory of the present embodiment is [GeTe (5nm) / Sb (5nm)] 5 , that is, the thickness of each layer of GeTe layer is 5nm, the thickness of each layer of Sb layer is 5nm, the number of alternating cycles of GeTe layer and Sb layer is 5, and the thickness of GeSb superlattice phase change thin film material is 50nm.
[0050] The rest of the preparation method is the same as that of Example 1, except that: Step 3. When preparing GeTe / Sb superlattice phase change thin film material by magnetron sputtering, the sputtering time of each layer of Sb is 20s.
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