Silicon-doped bismuth telluride-based memory material for phase-change memory and preparation method of silicon-doped bismuth telluride-based memory material

Abstract

The invention provides a silicon-doped bismuth telluride-based memory material for a phase-change memory and a preparation method of the silicon-doped bismuth telluride-based memory material. A chemical formula of the silicon-doped bismuth telluride-based material is BixTeySi100 minus (x plus y), wherein the x and the y satisfy the following conditions that the x is more than 0 and is less than or equal to 40, the y is more than 0 and is less than or equal to 60, and the x plus the y is more than or equal to 90 and is less than 100. Under the situation that an electrical impulse signal is applied, the silicon-doped bismuth telluride-based material has the reversible characteristic between a high-impedance state and a low-impedance state and can be used for the phase-change memory. Compared with the traditional GeTe, SiSbTe, GeSbTe and other phase-change thin-film materials for the phase-change memory, the silicon-doped bismuth telluride-based material has simple component, quicker phase-change speed, lower energy required for phase change and good compatibility with a complementary metal oxide semiconductor (CMOS) device manufacturing process, and is an excellent new memory material for the phase-change memory.

Description

technical field [0001] The invention belongs to the field of microelectronics, and in particular relates to a phase-change storage material which can be used in a phase-change storage and a preparation method thereof. Background technique [0002] Higher density, lower power consumption, lower cost and faster speed are the eternal goals pursued by memory designers and manufacturers. In the existing storage technology, phase change memory (PCRAM) is characterized by high-speed reading, high rewritable times, radiation resistance, non-volatility, small component size, multi-level storage, and compatibility with CMOS processes. With good advantages, it is considered by the International Semiconductor Industry Association that it is most likely to replace the current flash memory and become one of the mainstream products of future memory, and it is also the first next-generation memory device that may be commercialized. [0003] Phase change memory technology is based on Ovshin...

AI Technical Summary

Problems solved by technology

For example, the invention document with the application publication number CN102185106A discloses a SiBiTe-based thin film material for phase-change memory. This material contains a large amount of Si in an amorphous form around the BiTe material, and Si atoms are not incorporated into the BiTe material. , only plays the role of isolation, and only the BiTe grains undergo a phase transition during the phase transition process. The defect is that: due to the high resistance of amorphous Si, the material remains at a high level in both the crystalline and amorphous states. resistance (crystalline state 10 4 Above ohms, amorphous 10 6 ohms), resulting in a large write current and erase current

Images