Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemico-mechanical polishing solution for phase-change material GeSbTe

A chemical mechanical and polishing fluid technology, applied in the direction of polishing compositions containing abrasives, etc., can solve the problems of low polishing selection ratio, GeSbTe corrosion pits, and low polishing rate, so as to improve polishing rate, reduce surface corrosion, and high efficiency The effect of removal

Inactive Publication Date: 2018-06-08
浙江晶圣美纳米科技有限公司
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the invention is to overcome the existing chemical mechanical polishing liquid for phase change material GeSbTe polishing existing low polishing rate, GeSbTe / SiO 2 Due to the technical defects of low polishing selectivity and GeSbTe corrosion pits, a chemical mechanical polishing solution for phase change material GeSbTe was proposed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemico-mechanical polishing solution for phase-change material GeSbTe
  • Chemico-mechanical polishing solution for phase-change material GeSbTe
  • Chemico-mechanical polishing solution for phase-change material GeSbTe

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Abrasive: 2wt.% 50nm ammonia colloidal SiO 2

[0044] Oxidant type and content: 1wt.% H 2 o 2

[0045] Type and content of surface protective agent: 200ppm guar gum

[0046] Amino acid organic additives: 0.5wt.% cysteine

[0047] pH: 4.5

[0048]The polishing test results are shown in Table 1.

[0049] Table 1 Comparison of polishing performance of Comparative Example 1 and Example 1.

[0050]

[0051] It can be seen from Table 1 that when using Comparative Example 1, the GeSbTe polishing rate is low, only 91nm / min, and GeSbTe / SiO 2 The polishing selection ratio is 10:1. figure 1 The SEM cross-sectional view of the GeSbTe graphic sheet polished using Comparative Example 1 is given. It can be seen from the figure that the GeSbTe in the nanopore of the phase change unit is basically completely corroded, and only a small amount of GeSbTe remains at the bottom of the nanopore. Example 1 uses the polishing solution provided by the present invention. It can be se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a chemico-mechanical polishing solution for a phase-change material GeSbTe. The chemico-mechanical polishing solution for the phase-change material GeSbTe is prepared from anammonia type nanosilicon dioxide grinding material, an oxidizing agent, a water-soluble polymer surface protecting agent, an amino acid organic additive and a water-based medium. The chemico-mechanical polishing solution provided by the invention is applicable to a chemico-mechanical polishing process of the phase-change material GeSbTe, is high in polishing rate reaching to 200nm / min and high inGeSBTe / SiO2 polishing selection ratio reaching to 4000:1, and has no polishing etch defect.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid for phase change material GeSbTe, and belongs to the field of chemical mechanical polishing liquid. Background technique [0002] Phase change memory is considered to be the most competitive new generation of non-volatile memory due to its advantages of high-speed reading, high erasable times, non-volatility, small component size, low power consumption, strong vibration resistance and radiation resistance. Volatile memory. [0003] Currently the most mature phase change memory material is GeSbTe material. To achieve high-density storage, GeSbTe materials need to be deposited in nanopores defined by a dielectric material (usually silicon dioxide), and then the phase change material above the nanopores is removed by chemical mechanical polishing (CMP). In order to ensure the successful implementation of the CMP process, in addition t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C23F3/06
CPCC09G1/02C23F3/06
Inventor 王良咏徐志国潘忠才李燕军
Owner 浙江晶圣美纳米科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com