57results about How to "Affect electrical properties" patented technology

The invention discloses a method for preparing graphene through reduction of oxidized graphene. The method comprises the steps of under ultrasonic-assisted stirring, reducing the oxidized graphene with alkali metal or alkaline earth metal as a reducing agent and iodine as an initiator, and separating and purifying to obtain the graphene. The method has the advantages of short reaction cycle, simple operation, high efficiency, no pollution, low cost, good product quality and the like.

The invention relates to a light emitting diode (LED) with an oxide nano array structure and a preparation method thereof. The LED comprises a transparent conductive layer deposited on the surface of the LED, and oxide granules covered on the surface of the transparent conductive layer or embedded in the transparent conductive layer and distributed in array. The preparation method for the LED comprises steps of spin coating, stamping, ultraviolet (UV) irradiation, stripping, reactive ion etching (RIE), deposition and lift-off, and can also comprise an etching step between the RIE and deposition steps. The oxide granule structure distributed in array in the LED can cause scattering of light and destroy the light of original total internal reflection to allow more photons to escape from the LED so as to reduce the total reflection influence of the LED and improve the light emitting rate of the LED. The preparation method does not refer to plasma etching of an active layer and a p-type GaN at the same time of improving the light extraction efficiency of the LED, so plasma damage is not caused to affect the electric performance of the LED.

The invention relates to the technical field of batteries, and provides a preparation method of a flexible battery. The preparation method comprises three steps of S1, S2 and S3. The invention furtherprovides the flexible battery, which comprises a flexible battery main body, wherein the flexible battery main body comprises an electrolyte, an electrode assembling body and an outer packaging filmused for packaging the electrolyte and the electrode assembling body, the flexible battery main body is sequentially bent to form a plurality of bending points, a bending gap is formed between the twoadjacent bending points on the same side, and each of the bending gaps is filled with an elastic glue. On one hand, the flat flexible battery main body is bent multiple times in the same direction, the bending structures can eliminate the stress generated by bending during the using process after formation, and the service life of the flexible battery is prolonged; on the other hand, the filled elastic glue can serve as bearing bodies of the stress during stretching and contraction, so that the internal structure of the flexible battery is not affected by stretching and contraction in bending, thus the electrical performance and sealing property of the flexible battery are not affected by bending, and the bending performance is improved.

Provided are a polymer solar cell and a preparation method thereof. The cell comprises a transparent positive pole, hole transporting layers, an optical active layer and a metal negative pole, wherein the hole transporting layers comprise a first hold transporting layer and a second hold transporting layer, the first hole transporting layer is arranged on the surface of the transparent positive pole, and metal nano materials are doped in the first hole transporting layer; the second hold transporting layer is arranged on the surface of the first hole transporting layer; and metal nano materials are doped in the optical active layer. According to the polymer solar cell and the preparation method, the exposed metal nano materials in the first hole transporting layer are coated, the exposed metal nano materials in the first hole transporting layer and the optical active layer in the cell form good ohmic contact, the electrical property of the cell are prevented from being influenced due to leading-in of the metal nano materials, the fact that open-circuit voltage and filling factors of the cell are not reduced is guaranteed, and meanwhile photoelectric conversion efficiency is improved by more than 10%.

The invention relates to a method for enhancing the pressure resistance capacity of a chip in the packaging process and the chip thereof. The method comprises the following steps of: additionally arranging patterns used for forming through holes in a redundancy region of each metal interlayer insulation layer mask and a redundancy region of each metal interconnect mask, wherein the pattern additionally arranged in the redundancy region at the nth metal interconnect mask corresponds to the pattern additionally arranged in the redundancy region of the nth metal interlayer insulation layer mask, and the pattern additionally arranged in the redundancy region of the (n+1)th metal interlayer insulation layer mask corresponds to the pattern additionally arranged in the redundancy region of the nth metal interconnect mask, wherein n is 1, 2, 3 till N. The method for enhancing the pressure resistance capacity of the chip in the packaging process and the chip thereof can improve the pressure resistance capacity of the chip, thereby improving the manufacturing reliability of the chip.

The invention provides a preparation method of an iron-doped perovskite type negative temperature coefficient thermal sensitive ceramic material. The method comprises the following steps: weighing rawmaterials according to a La-Cr-Fe atomic percent of 30-55 to 10-65 to 5-35), and performing wet grinding to obtain slurry; drying the slurry, and grinding to obtain a powder; calcining to obtain a perovskite phase (LaCrFe)2O3 powder; preparing a bulk material from the powder, adopting a two-step sintering method, and performing furnace cooling, so as to obtain the iron-doped perovskite type negative temperature coefficient thermal sensitive ceramic material. According to the preparation method disclosed by the invention, the two-step sintering method is adopted, grain boundary diffusion is positioned in an active state while inhibiting grain boundary migration, and the aim of completing sintering on premise of not growing grains is achieved; the finally prepared ceramic material is smallin grain size, uniform in distribution, high in resistance, wide in adjustable range, small in value B change, high in stability and excellent in consistency.

The invention discloses an insulation low-voltage power cable. The insulation low-voltage power cable comprises a solid aluminum conductor, wherein the solid aluminum conductor is arranged at the center of the cable, two semi-circular first solid aluminum lines with same shape structures are transversely extruded outside the solid aluminum conductor, two semi-circular second solid aluminum lines with same shape structures are longitudinally extruded, a low-density polyethylene insulation layer wraps the second aluminum lines in an extruded manner, dual layers of water blocking tapes wraps in a lamination way, a corrugated aluminum sheath is welded outside the water blocking tapes, asphalt is coated on the corrugated aluminum sheath, and finally, a middle-density polyethylene sheath is extruded at the outermost layer of the cable. The insulation low-voltage power cable has the characteristics of good water resistant performance, corrosion resistance, oxidation resistance, good heat resistance, no mechanical damage and the like.

The invention discloses a 0.6/1 kV waterproof tensile power cable for shallow seas. The 0.6/1 kV waterproof tensile power cable comprises a cable core, wherein the cable core is formed by twisting three fan-shaped phase line cores, a circular ground line and a filling water-blocking strip together; a wrapping belt is wrapped outside the cable core, a low-density polyethylene inner sheath is firstly extruded outside the wrapping belt, and then a thick steel wire armoring layer is tightly wound; two wrapping belts are wrapped outside the thick steel wire armoring layer, then a medium-density polyethylene isolation sleeve is extruded, two water-blocking belts are wrapped outside the medium-density polyethylene isolation sleeve in a stacked manner, a corrugated aluminum sheath is welded outside the water-blocking belt, asphalt is coated on the corrugated aluminum sheath, and finally a medium-density polyethylene outer sheath is extruded on the outermost layer of the cable. The 0.6/1 kV waterproof tensile power cable has the characteristics of structure stability, low skin effect, large carrying capacity, good water-blocking performance, corrosion resistance, oxidation resistance and the like, and is widely applied to power transmission between a mainland and an island and between islands as well as power transmission traversing bottoms of rivers, lakes and seas.

The invention belongs to the technical field of primary lithium batteries, and discloses an impurity removal method for a positive active material of a lithium-ferrous disulfide battery. The method comprises the steps as follows: the positive active material containing ferrous disulfide powder is provided; the positive active material is extracted by an organic solvent; impurities are removed from the positive active material; the active material is subjected to vacuum drying; and an organic solvent is glycol dimethyl ether and/or 1,3-dioxolame. The impurities in the positive active material of the lithium-ferrous disulfide battery are extracted directly by a solvent component for preparing electrolyte, so that a new impurity is not introduced into the battery; the positive active material does not contact a lot of water to generate a Fe<2+> or Fe<3+> impurity; the extracted positive active material can be directly used after being dried; the problems that the electrical property, the storage property or the safety performance and the like of the battery are not affected by adding an additive to the battery are overcome; and the impurity removal method is relatively economical and applicable.

The invention relates to the field of radomes, in particular to a low-density glass fiber reinforced plastic radome and production process thereof. The radome comprises a first protective cover and asecond protective cover which enclose a hollow water tower shape, and an antenna holding pole arranged in a hollow water tower-shaped cavity formed by the first protective cover and the second protective cover; the first protective cover is provided with a first clamping piece, and the second protective cover is provided with a second clamping piece corresponding to the first clamping piece of thefirst protective cover. The first clamping piece and the second clamping piece are connected so that the first protective cover and the second protective cover can be detachably connected to define ahollow water tower-shaped structure, and an openable and closable window convenient to overhaul is formed in the surface of the second protective cover; the high-wave-transmission fiber cloth layer comprises composite core-spun gauze formed by weaving carbon fiber core yarns and glass fiber weaving yarns and curing resin cured outside the composite core-spun gauze. The glass fiber reinforced plastic has the advantages of the low density, the light weight, the small dielectric constant, the good wave permeability, the high mechanical strength and the long service life.

The invention discloses an insulated high-voltage optical fiber composite power cable, comprising a solid aluminum conductor in the center of the cable, wherein four first solid aluminum shaped wires and then an annular second solid aluminum shaped wire are extruded outside the solid aluminum conductor; a low density polyethylene insulating layer is extruded outside the second aluminum shaped wire, a double-layer water blocking tape is superposed and lapped, a corrugated aluminum sheath is welded outside the water blocking tape, an alkali-free glass fiber tape is lapped outside the corrugated aluminum sheath, and a medium density polyethylene outer sheath is finally extruded at the outermost layer of the cable; and an optical fiber is arranged in each first solid aluminum shaped wire. The composite power cable has the characteristics of good water blocking performance, good corrosion, oxidation and heat resistance, no mechanical damage and the like, the temperature and the transmission load of the power cable can be monitored in real time, and the power cable can be used for 'three-network fusion'.

The invention relates to a chemico-mechanical polishing solution for a phase-change material GeSbTe. The chemico-mechanical polishing solution for the phase-change material GeSbTe is prepared from anammonia type nanosilicon dioxide grinding material, an oxidizing agent, a water-soluble polymer surface protecting agent, an amino acid organic additive and a water-based medium. The chemico-mechanical polishing solution provided by the invention is applicable to a chemico-mechanical polishing process of the phase-change material GeSbTe, is high in polishing rate reaching to 200nm/min and high inGeSBTe/SiO2 polishing selection ratio reaching to 4000:1, and has no polishing etch defect.

The invention relates to a display substrate, a preparation method thereof and a display device. The display substrate comprises a substrate and a plurality of driving circuits arranged on the substrate. The driving circuit includes a driving transistor and a switching transistor. The driving transistor comprises a first active layer and a first grid electrode located on the side, close to the substrate, of the first active layer. The switch transistor comprises a second active layer arranged on the same layer as the first active layer, and a second grid electrode located on the side, away from the substrate, of the second active layer. According to the display substrate, the preparation method thereof and the display device, the display performance of the display substrate can be improved, and the manufacturing process of the display substrate is simplified.

A process for decreasing the residual microparticles and defects includes providing a semiconduct chip containing the first area covered by a oxide-nitride-oxide (ONO) layer and the second area covered by the second and the first polysilicon layers, an oxide layer, and said ONO layer, generating a photoresist layer on ONO layer to cover the first area, dry etching on said ONO layer and two polysilicon layers in the second area, removing the photoresist layer, flushing with a buffer oxide layer etching liquid for removing oxide layer, and flushing with SC-1 solution and then with SC-2 solution.

The invention discloses a display panel and a display device, and belongs to the technical field of display, the display panel comprises a display area and a non-display area at least partially surrounding the display area, the non-display area at least comprises a first non-display area, the first non-display area comprises a cutting edge and a retaining wall, and the display panel comprises a first substrate, the first substrate at least comprises a first substrate, a first conductive layer and a second substrate which are arranged in a stacked mode, the first insulating layer is located on the side, away from the first substrate, of the second substrate, the first metal layer is located on the side, away from the first substrate, of the first insulating layer, and in the first non-display area, the first metal layer comprises at least one first part; the first part is located between the cutting edge and the retaining wall in the direction from the first non-display area to the display area. The display device comprises the display panel. The speed of static electricity entering the screen body can be effectively reduced, the electrostatic protection capability is improved, and the product yield and the display quality can be improved.

The invention relates to a pedestal grounding detection apparatus and method. A voltage signal of a base is acquired through a voltage signal acquisition unit, and a voltage detection unit determines whether to take a first signal indicating that the base is grounded as an output signal or not according to the voltage signal and a preset voltage signal; and once the control unit receives the first signal, the control unit immediately indicates the semiconductor equipment to stop executing the process and sends out an alarm signal, so that the grounding condition caused by short circuit between the base and the chamber wall or the lining and the like can be found in time, and the accidents that the electrical performance of the wafer is seriously influenced and the product quality is influenced because the wafer is broken down by current are avoided.

The invention discloses a water-blocking super-large section hollow split conductor. The center of the conductor is provided with a hollow layer or a filled water-blocking layer; a single conductor single-line layer is arranged outside the hollow layer or the filled water-blocking layer; a plurality of corrugated conductor blocks are arranged outside the conductor single-line layer; a corrugated water-blocking layer is arranged outside each corrugated conductor block; a gap among the corrugated water-blocking layers is provided with a water-blocking filling strip; and a water-blocking layer is arranged outside the plurality of corrugated conductor blocks. The water-blocking super-large section hollow split conductor has the characteristics of being low in characteristic requirements on a tooling mold and equipment, stable in structure, low in skin effect, high in carrying capacity and good in water-blocking property, corrosion resistance and oxidation resistance, and the difficulty of the production technology is reduced.

The invention relates to the field of radomes, particularly to a low-dielectric-constant glass fiber reinforced plastic radome and a production process thereof. The low-dielectric-constant glass fiberreinforced plastic radome comprises a mounting base mounted on a wall, a protective cover arranged outside the mounting base in an openable and closable covering mode, and an antenna holding pole located in a cavity defined by the mounting base and the protective cover. The glass fiber reinforced plastic base layer comprises in parts by mass: 50-80 parts of unsaturated polyester resin, 5-20 partsof glass fibers, 2-15 parts of carbon nanotubes, 0.5-4 parts of 1, 3-butanediol, 5-30 parts of a heat-resistant modifier, 5-10 parts of a low shrinkage agent, 1-5 parts of a release agent, 5-15 partsof a coupling agent, 1-5 parts of fluorinated graphene, 1-5 parts of an initiator and 1-5 parts of a thickener. The low-dielectric-constant glass fiber reinforced plastic radome has the advantages ofa small dielectric constant, the good wave permeability, the high mechanical strength and the long service life.

A method for forming a semiconductor structure comprises the following steps: providing a substrate; forming a gate structure, a first side wall and a second side wall on the substrate; forming a source-drain opening in the substrate by taking the first side wall and the second side wall as masks; removing the second side wall; carrying out ion implantation on the source-drain opening, and forming a suppression layer in the substrate on the side wall and the bottom of the source-drain opening, wherein first ions are doped in the suppression layer; and forming a source-drain doping layer in the source-drain opening. The second side wall and the source-drain opening are firstly formed, and the second side wall is removed after the source-drain opening is formed, so that the injection angle during first ion injection is increased, more injected first ions are diffused into the substrate corresponding to the side wall of the source-drain opening, the surrounding area of the suppression layer is increased, and in the subsequent activation annealing treatment, the second ions in the source-drain doping layer can be diffused in a large area range, so the area of the finally formed source-drain doping region is increased, and the performance of the finally formed semiconductor structure is improved.