4results about How to "Affect electrical properties" patented technology

The utility model discloses a needle structure, including cap body, spring and fixed connecting portion, the lower extreme of fixed connecting portion is fixed on the circuit board and is connected with the circuit board electric connection, the inside of cap body has the accommodation cavity of downward opening, the upper portion of fixed connecting portion is nested in the accommodation cavity, the spring is arranged in the accommodation cavity, the lower extreme of spring is fixedly connected with the upper extreme of fixed connecting portion, the upper extreme of spring is fixedly connected with the inner wall of cap body, cap body passes through spring and can reciprocate up and down relative to fixed connecting portion. The structure can because the opening of cap body is downward, when the earphone carries out daily storage, the sweat and grease that remain on the earphone in the process of cap body reciprocation up and down do not enter the accommodation cavity, do not produce corrosion to spring and affect the elasticity and electric property of spring, have better anticorrosive property and security.

The application belongs to the technical field of high-performance glass fiber preparation, and provides a low-dielectric-loss high-purity quartz glass fiber material prepared by a sol-gel method and a preparation method thereof. First, a silicate oligomer solution, a hydrogen-containing siloxane oligomer solution and a siliconized template dispersion liquid are prepared, and then are compounded with a silicon source and a fiber-forming aid to form a spinning precursor sol, and through electrospinning, pre-curing, segmented heat treatment, sealing and dehydroxy treatment, the high-purity quartz glass fiber material is obtained. Through the synergistic effect of oligomeric siloxane structure regulation, template limited pore formation, surface sealing and dehydroxy, the fiber continuous forming, low-connected-pore construction and impurity control are considered, which is conducive to reducing the dielectric loss and improving the material purity, structural stability and application adaptability.

The application belongs to the technical field of batteries, and particularly relates to a battery cell preparation device and preparation method and a battery cell, which can monitor actual gas production in a cell formation or aging treatment process. The battery cell preparation device comprises: a gas collecting cylinder configured to collect gas produced in the cell formation or aging treatment process, and provided with a gas inlet and a gas outlet, the gas inlet is configured to communicate with a liquid injection port of the cell, a plurality of indicating portions are arranged on a cylinder wall of the gas collecting cylinder in an axial direction, and the indicating portions are configured to indicate a theoretical gas production amount in the cell formation or aging treatment process; a piston arranged in the gas collecting cylinder and in sliding connection with the gas collecting cylinder, the piston is configured to represent different gas production amounts collected in the gas collecting cylinder when moving to different indicating portions in the axial direction; a control portion arranged on an outer side of the gas collecting cylinder and in transmission connection with the piston; a fixing portion arranged on the outer side of the gas collecting cylinder; and an elastic structure arranged between the control portion and the fixing portion and configured to provide resistance when the piston moves away from the gas inlet in the axial direction.

A memory structure and a method for forming the same include: providing a substrate; forming a plurality of memory gate structures separated from each other on the substrate, with an isolation groove between adjacent memory gate structures, the memory gate structure including a floating gate layer and a control gate layer located on the floating gate layer; forming an isolation layer in the isolation groove, wherein the top surface of the isolation layer is lower than the top surface of the control gate layer, and the top surface of the isolation layer is higher than the bottom surface of the control gate layer; forming a notch on the exposed sidewall of the control gate layer, wherein the bottom of the notch is lower than or flush with the top surface of the isolation layer; and forming an initial metal silicide layer on the exposed control gate layer surface and the top surface of the isolation layer. By forming a notch at the junction of the isolation layer and the control gate layer, the surface area of ​​the junction is effectively increased, and the accumulation of the material of the initial metal silicide layer at the junction is avoided, thereby forming a sharp protrusion in the subsequent annealing process, which affects the electrical performance of the memory structure finally formed.