3results about How to "Increase grinding rate" patented technology

The utility model provides a kind of steel ingot polishing device, including workbench, workbench upper portion is provided with driving mechanism, driving mechanism is used to drive four sliders to move, driving mechanism includes four sliders, four sliders upper portion is connected with bearing seat, every two opposite bearing seat is rotatably connected with a rotating roller, the outer lateral wall of two rotating rollers is wound with annular abrasive band, two rotating rollers one end is connected with the output shaft of first motor by coupling, workbench upper portion is provided with pressing mechanism, and it is simple to operate by the rotating roller cooperation annular abrasive band to make, and production cost is lower, and it can be used without equipping professional technical personnel, and then it can reduce early investment cost and personnel investment cost, and it is convenient to maintain and replace, beneficial to save later use cost, further improve overall production efficiency.

The invention provides a manufacturing method of a semiconductor device, which comprises the following steps of: providing a semiconductor substrate comprising a first pattern region and a second pattern region, and performing floating gate polycrystalline silicon deposition on the semiconductor substrate to form a first polycrystalline silicon layer; the pattern density of the first pattern area is greater than that of the second pattern area; performing ion implantation on the first polycrystalline silicon layer, and forming an oxide layer on the top surface of the first polycrystalline silicon layer; protecting the oxide layer of the second pattern area and etching the oxide layer of the first pattern area; performing chemical mechanical polishing treatment on the first polycrystalline silicon layer in the first pattern area and the oxide layer and the first polycrystalline silicon layer in the second pattern area; and generating the semiconductor device based on the first polycrystalline silicon layer after the chemical mechanical polishing treatment. The thickness of the polycrystalline silicon layer in the areas with different pattern densities can be ensured to be consistent, so that the reliability of the semiconductor device is improved, and the process is simple and convenient, high in flexibility and easy to implement.

This disclosure provides a retaining ring and a polishing apparatus. The retaining ring includes an annular body having an inner peripheral wall, an outer peripheral wall, and a polishing surface connecting the top ends of the inner and outer peripheral walls. The annular body also has a plurality of spaced grooves recessed from the polishing surface, extending from the inner peripheral wall to the outer peripheral wall and communicating through it. The width between the two sidewalls of each groove is not entirely the same in a direction perpendicular to the bottom wall of the groove, and the sum of the widths between the bottom ends of the two sidewalls of all grooves is greater than or equal to the sum of the widths between the top ends of the two sidewalls of all grooves. The retaining ring of this disclosure can reduce polishing defects on the surface of semiconductor structures and improve the polishing rate.