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WCMP (wolfram chemical mechanical polishing) grinding device and method for improving WCMP grinding rate

A technology of grinding device and grinding liquid, which is applied in the technical field of chemical mechanical grinding (CMP), can solve the problems of difficult development of grinding liquid and grinding pad, high cost, and affecting the service life of the grinding pad, so as to improve the grinding rate, low cost, and structure simple effect

Inactive Publication Date: 2013-07-03
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] (3) In the case of increasing the surface roughness of the polishing pad, it will seriously affect the service life of the polishing pad;
[0015] (4) Adopting new high-speed grinding fluid and grinding pad, there will be problems in the development of new grinding fluid and grinding pad, and the cost is relatively high

Method used

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  • WCMP (wolfram chemical mechanical polishing) grinding device and method for improving WCMP grinding rate
  • WCMP (wolfram chemical mechanical polishing) grinding device and method for improving WCMP grinding rate
  • WCMP (wolfram chemical mechanical polishing) grinding device and method for improving WCMP grinding rate

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no. 1 approach

[0036] FIG. 1 is a schematic diagram showing the outline of a conventional WCMP polishing apparatus. As shown in FIG. 1 , in the prior art, a WCMP polishing device mainly includes a polishing pad 100 , a tray 200 , and a pipe portion 400 , and uses a polishing liquid 11 to polish a workpiece 300 . Specifically, the polishing liquid 11 introduced from the pipe portion 400 is carried on the polishing pad 100 , and the tray 200 holds the workpiece 300 and enables the workpiece 300 to be polished by WCMP on the polishing pad 100 . The pipe part 400 introduces a polishing liquid or slurry into the polishing pad 100 .

[0037] The inventors of the present invention have found through intensive research that during the grinding process of WCMP, the grinding rate increases with the grinding temperature when other conditions remain unchanged. Especially, in the range of 30-60°C, the grinding rate increases rapidly with the increase of the temperature of the polishing liquid, but when ...

no. 2 approach

[0045] On the basis of the above, the inventors of the present invention have found through intensive research that the flow rate of the polishing liquid flowing in the pipe portion 400 is also closely related to the temperature of the polishing liquid. Therefore, on the basis of the above-mentioned first embodiment, the following second embodiment will be described.

[0046] FIG. 3 is a block diagram showing a partial structure of a WCMP polishing apparatus according to a second embodiment of the present invention.

[0047] That is, on the basis of the structure shown in FIG. 1 , a heating device 500 , a temperature control device 600 , and a flow rate control device 800 are further added. The heating device 500 is used for heating the pipe part 400 or the polishing pad 100 , or / and the heating device 500 is used for heating the pipe part 400 and the polishing pad 100 , so that the temperature of the polishing liquid 11 flowing in the pipe part 400 is increased. The flow rat...

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Abstract

The invention relates to a WCMP (wolfram chemical mechanical polishing) grinding device and a method for improving WCMP grinding rate. The grinding device utilizes grinding liquid for grinding a processed object (300), and comprises a grinding pad (100) for containing the grinding liquid, a tray (200) for holding and enabling the processed object (300) to be on the grinding pad (100) to be subjected to WCMP grinding, a tubular part (400) for introducing the grinding liquid, a heater (500) for heating the tubular part (400) and / or the grinding pad (100), and a temperature controller (600) for controlling the heater (500) to keep the temperature of the grinding liquid flowing in the tubular part (400) to be 30-60 DEG C. The WCMP grinding device and the method for improving WCMP grinding rate have the advantages of improving the grinding rate, no influence on the service life of the grinding pad, simple structure and low cost.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing process, in particular to a WCMP (Chemical Mechanical Polishing of Tungsten) process. Background technique [0002] As the need to increase the density of active devices on a single chip increases, so does the need for greater flatness on the active surface of the wafer. A planar surface is required to improve interconnect metallization to underlying layers and to improve the ability to fill vias and lines. [0003] Under such requirements, CMP (Chemical Mechanical Polishing) is a commonly used main process, especially for surface planarization in the manufacturing process of ultra-large silicon film integrated circuits, and is an indispensable film planarization technology. [0004] Among them, WCMP, tungsten chemical mechanical polishing technology, has been widely used in mass production of memory and logic products. [0005] In WCMP technology, in order to increase the productivity of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04B24B37/34B24B51/00
Inventor 曾明张礼丽范怡平杨贵璞
Owner CSMC TECH FAB2 CO LTD
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