Chemical mechanical polishing method

Abstract

A chemical mechanical polishing (CMP) method is provided. The method is capable of polishing a substrate in a CMP apparatus by using a hydrophobic polishing pad and includes following steps. A first CMP process is performed to the substrate. A first cleaning process is performed to the hydrophobic polishing pad. A second CMP process is performed to the substrate, wherein the first CMP process, the first cleaning process and the second CMP process are performed in sequence. The invention enables the polishing efficiency to be improved effectively when the hydrophobic polishing pad is used.

Description

technical field [0001] The invention relates to a chemical mechanical grinding method, in particular to a segmented chemical mechanical grinding method. Background technique [0002] As the size of components continues to shrink, the resolution of lithography exposure increases relatively, and with the reduction of exposure depth of field, the requirements for the level of chip surface fluctuations are more stringent. Therefore, when entering the deep sub-micron process, the planarization of the chip depends on the chemical mechanical polishing process. Its unique anisotropic grinding properties can also be applied to the vertical And the production of the mosaic structure of the horizontal metal interconnection machine, the production of shallow trench isolation of components in the front-end process and the production of advanced components, the planarization of micro-electromechanical systems and the production of flat-panel displays, etc. [0003] Chemical mechanical po...

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Problems solved by technology

[0004] However, when the substrate is chemically mechanically polished using a hydrophobic polishing pad, by-products such as surfactants will accumulate on the hydrophobic polishing pad, reducing the polishing rate.

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