Silicon slice grinding rate control method

A technology of grinding rate and control method, which is applied in grinding devices, grinding machine tools, chemical instruments and methods, etc., can solve the problems of surface quality decline of grinding silicon wafers, increase production costs, and high requirements for abrasives, so as to improve production efficiency and improve surface quality. quality, the effect of increasing the grinding rate

Inactive Publication Date: 2009-02-18
JIANGSU HAIXUN IND GROUP SHARE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, in the patent 03155318.4, by controlling the abrasive particle size, the grinding rate is faster than the above two types of grinding liquid, and the fastest speed can reach 230nm/min, but the surface quality of the polished silicon wafer is reduced due to the change of the abrasive particle size
In the pate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0022] The preparation method of the grinding liquid is to add the abrasive, the penetrating agent, the lubricant, the pH adjusting agent and the surface active agent to the deionized water in sequence at room temperature, and then stir it evenly.

[0023] In the method for controlling the grinding rate of silicon wafers of the present invention, the grinding pressure is preferably 25kPa or less. The process of applying the pressure is to increase the pressure from 0kPa to the required pressure at a constant speed and keep it under a stable pressure for grinding; the speed of the grinding disc on the grinder is preferably less than 100rpm, The rotation speed of the lower grinding disk is preferably 100 rpm or less.

[0024] The polishing liquid of the present invention and the set polishing conditions can provide a faster polishing rate and better surface quality. The principle is that the present invention achieves the effects of wetting the solid particles and dispersing the sol...

Example Embodiment

[0025] Example 1:

[0026] First, configure 2L of silicon wafer polishing liquid. Weigh 10% of the 10μm boron carbide abrasive, 3.5% of phosphate, 2% of glycerin, 12% of sodium hydroxide, 0.4% of hexahydroxypropyl propylene diamine, 0.5% of the polymer with a degree of polymerization of 20. Fatty alcohol polyoxyethylene ether and deionized water are the remainder for use.

[0027] At room temperature, add the abrasive, penetrating agent, lubricant, pH regulator and surfactant in the above-mentioned weight percentages to deionized water in sequence, and stir evenly.

[0028] When grinding, fix the grinding block with silicon wafers to the grinding disc with wax, dilute the above-mentioned grinding liquid with deionized water at a ratio of 1:100, and supply it to the surface of the silicon wafer to be ground, apply pressure to the grinding machine, and apply While pressing, the grinding disc of the grinder is rotated to grind the surface of the silicon wafer to be ground. The process...

Example Embodiment

[0030] Example 2:

[0031] First, configure 2L of silicon wafer polishing liquid. Weigh 12% 20μm aluminum oxide abrasive, 5% polyoxyethylene ether (JFC), 1.5% glycerin, 8% tetramethylammonium hydroxide, 2.5% tetrahydroxyethyl ethylenedioxide, respectively. Amine, 0.3% lauroyl monoethanolamine, and deionized water are the remainder for use.

[0032] The slurry is prepared by adding abrasives, penetrating agents, lubricants, pH regulators, and surfactants to deionized water in sequence under room temperature conditions, and stirring them evenly.

[0033] When grinding, stick the grinding block with silicon wafers to the grinding disc with wax, dilute the grinding liquid with deionized water at a ratio of 1:100, and supply it to the surface of the grinding object, while applying pressure to the grinder , The grinding disc of the grinder is rotated to grind the surface of the silicon wafer to be ground. The process of applying pressure is from 0kPa to 12kPa at a constant speed, and th...

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PUM

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Abstract

The invention provides a method for controlling the lapping speed of a silicon chip, which comprises the following steps: the silicon chip to be lapped is clamped to a lapping plate of a lapper, the surface of the silicon chip to be lapped is supplied with lapping liquid, the lapper is subjected to pressure and the lapping plate of the lapper is controlled to rotate, and the surface of the object to be lapped is lapped; the improvement of the method is that the lapping liquid used comprises abrasive filler, osmotic agent, pH regulator, surface active agent and deionized water; and the lapping pressure of the lapper is controlled below 50kPa, the rotating speed of an upper lapping plate is controlled below 200 rounds per minute, and the rotating speed of a lower lapping plate is controlled below 200 rounds per minute. The method can effectively improve the lapping speed for lapping the silicon chip, guarantee that the silicon chip has better surface quality after lapping, improve the production efficiency, and reduce the production cost.

Description

technical field [0001] The invention relates to a silicon wafer processing method, in particular to a silicon wafer grinding rate control method for grinding a single crystal silicon wafer used as an integrated circuit substrate. Background technique [0002] Silicon is a hard and brittle material with a diamond crystal structure and covalent bonds between atoms. It is a good semiconductor material. At present, more than 90% of integrated circuit semiconductor chips are silicon wafers (silicon wafers). In order to print integrated circuits on silicon wafers and combine them closely with other components, the surface of silicon wafers must be flat, especially as the integration level of integrated circuits continues to increase, stricter requirements are placed on the flatness of silicon wafer surfaces. . [0003] Grinding is the first mechanical processing on the surface of silicon wafer after slicing, and it is also the most basic process in silicon wafer processing techno...

Claims

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Application Information

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IPC IPC(8): B24B37/04B24B29/00B24B1/00C09G1/02C09K3/14H01L21/304
Inventor 仲跻和
Owner JIANGSU HAIXUN IND GROUP SHARE
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