Silicon slice grinding rate control method
A technology of grinding rate and control method, which is applied in grinding devices, grinding machine tools, chemical instruments and methods, etc., can solve the problems of surface quality decline of grinding silicon wafers, increase production costs, and high requirements for abrasives, so as to improve production efficiency and improve surface quality. quality, the effect of increasing the grinding rate
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[0022] The preparation method of the grinding liquid is to add the abrasive, the penetrating agent, the lubricant, the pH adjusting agent and the surface active agent to the deionized water in sequence at room temperature, and then stir it evenly.
[0023] In the method for controlling the grinding rate of silicon wafers of the present invention, the grinding pressure is preferably 25kPa or less. The process of applying the pressure is to increase the pressure from 0kPa to the required pressure at a constant speed and keep it under a stable pressure for grinding; the speed of the grinding disc on the grinder is preferably less than 100rpm, The rotation speed of the lower grinding disk is preferably 100 rpm or less.
[0024] The polishing liquid of the present invention and the set polishing conditions can provide a faster polishing rate and better surface quality. The principle is that the present invention achieves the effects of wetting the solid particles and dispersing the sol...
Example Embodiment
[0025] Example 1:
[0026] First, configure 2L of silicon wafer polishing liquid. Weigh 10% of the 10μm boron carbide abrasive, 3.5% of phosphate, 2% of glycerin, 12% of sodium hydroxide, 0.4% of hexahydroxypropyl propylene diamine, 0.5% of the polymer with a degree of polymerization of 20. Fatty alcohol polyoxyethylene ether and deionized water are the remainder for use.
[0027] At room temperature, add the abrasive, penetrating agent, lubricant, pH regulator and surfactant in the above-mentioned weight percentages to deionized water in sequence, and stir evenly.
[0028] When grinding, fix the grinding block with silicon wafers to the grinding disc with wax, dilute the above-mentioned grinding liquid with deionized water at a ratio of 1:100, and supply it to the surface of the silicon wafer to be ground, apply pressure to the grinding machine, and apply While pressing, the grinding disc of the grinder is rotated to grind the surface of the silicon wafer to be ground. The process...
Example Embodiment
[0030] Example 2:
[0031] First, configure 2L of silicon wafer polishing liquid. Weigh 12% 20μm aluminum oxide abrasive, 5% polyoxyethylene ether (JFC), 1.5% glycerin, 8% tetramethylammonium hydroxide, 2.5% tetrahydroxyethyl ethylenedioxide, respectively. Amine, 0.3% lauroyl monoethanolamine, and deionized water are the remainder for use.
[0032] The slurry is prepared by adding abrasives, penetrating agents, lubricants, pH regulators, and surfactants to deionized water in sequence under room temperature conditions, and stirring them evenly.
[0033] When grinding, stick the grinding block with silicon wafers to the grinding disc with wax, dilute the grinding liquid with deionized water at a ratio of 1:100, and supply it to the surface of the grinding object, while applying pressure to the grinder , The grinding disc of the grinder is rotated to grind the surface of the silicon wafer to be ground. The process of applying pressure is from 0kPa to 12kPa at a constant speed, and th...
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