Silicon slice grinding rate control method

Abstract

The invention provides a method for controlling the lapping speed of a silicon chip, which comprises the following steps: the silicon chip to be lapped is clamped to a lapping plate of a lapper, the surface of the silicon chip to be lapped is supplied with lapping liquid, the lapper is subjected to pressure and the lapping plate of the lapper is controlled to rotate, and the surface of the object to be lapped is lapped; the improvement of the method is that the lapping liquid used comprises abrasive filler, osmotic agent, pH regulator, surface active agent and deionized water; and the lapping pressure of the lapper is controlled below 50kPa, the rotating speed of an upper lapping plate is controlled below 200 rounds per minute, and the rotating speed of a lower lapping plate is controlled below 200 rounds per minute. The method can effectively improve the lapping speed for lapping the silicon chip, guarantee that the silicon chip has better surface quality after lapping, improve the production efficiency, and reduce the production cost.

Description

technical field [0001] The invention relates to a silicon wafer processing method, in particular to a silicon wafer grinding rate control method for grinding a single crystal silicon wafer used as an integrated circuit substrate. Background technique [0002] Silicon is a hard and brittle material with a diamond crystal structure and covalent bonds between atoms. It is a good semiconductor material. At present, more than 90% of integrated circuit semiconductor chips are silicon wafers (silicon wafers). In order to print integrated circuits on silicon wafers and combine them closely with other components, the surface of silicon wafers must be flat, especially as the integration level of integrated circuits continues to increase, stricter requirements are placed on the flatness of silicon wafer surfaces. . [0003] Grinding is the first mechanical processing on the surface of silicon wafer after slicing, and it is also the most basic process in silicon wafer processing techno...

AI Technical Summary

Problems solved by technology

For example, in the patent 03155318.4, by controlling the abrasive particle size, the grinding rate is faster than the above two types of grinding liquid, and the fastest speed can reach 230nm / min, but the surface quality of the polished silicon wafer is reduced due to the change of the abrasive particle size

In the patent 200510055710.5, a grinding method using spherical silica abrasives is proposed, which achieves a faster grinding rate, and the maximum grinding rate can reach 600nm / min. However, this method has high requirements for abrasive materials and increases production costs. It is not easy to achieve in large-scale production