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Cmp system with temperature-controlled polishing head

A chemical machinery, grinding head technology, used in grinding machine tools, grinding devices, parts of grinding machine tools, etc.

Inactive Publication Date: 2008-07-23
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The main purpose of the present invention is to overcome the defects of existing chemical mechanical polishing and provide a chemical mechanical polishing system with a new structure. The technical problem to be solved is to prevent it from forming unnecessary complexity on the wafer. And it can increase the chemical mechanical polishing rate and improve the uniformity of chemical mechanical polishing, so it is more suitable for practical use

Method used

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  • Cmp system with temperature-controlled polishing head
  • Cmp system with temperature-controlled polishing head
  • Cmp system with temperature-controlled polishing head

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Embodiment Construction

[0054] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, features and effects of the chemical mechanical polishing system proposed in accordance with the present invention will be given below with reference to the accompanying drawings and preferred embodiments. , The detailed description is as follows.

[0055] FIG. 1 schematically illustrates a chemical mechanical polishing system, including a polishing head 2, a thin film 4, a wafer 6 and a polishing pad 8, wherein the polishing pad 8 and the wafer 6 are in contact with each other during the polishing process. A platen 10 is attached to the polishing pad 8. During the chemical mechanical polishing process, when the polishing head 2 moves back and forth between the center and the edge of the polishing pad 8, the polishing pad 8 rotates at a constant rotation rate. By the operation of the polishing head 2 a...

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Abstract

The invention relates to a chemical mechanical polishing system with a temperature-controlled grinding head for grinding wafers, which includes a grinding head; an inner tube connected to the grinding head, wherein the inner tube is filled with a heat medium; a connected inner tube medium heater; and a pressure controller connected to the inner tube. The chemical mechanical polishing system of the present invention does not create unnecessary complexity on the wafer, and can increase the chemical mechanical polishing rate and improve the chemical mechanical polishing uniformity.

Description

Technical field [0001] The invention relates to an integrated circuit device, in particular to a chemical mechanical polishing device. Background technique [0002] When manufacturing integrated circuits, chemical mechanical polishing is a common practice. Typically, chemical mechanical polishing is used for the planarization of semiconductor wafers. Chemical mechanical polishing uses the cooperation of physical and chemical forces to polish wafers. When the wafer is placed on a polishing pad, polishing is achieved by applying a force to the backside of the wafer. First, a polishing pad is placed against the wafer, and then when the slurry containing abrasives and reactive chemicals passes through it, the polishing pad and the wafer are rotated counterclockwise. Chemical mechanical polishing is an effective way to achieve comprehensive planarization of wafers. [0003] However, due to various factors, it is difficult to achieve truly uniform grinding. For example, the slurry can ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04B24B29/00B24B55/00H01L21/304B24B41/06
CPCB24B37/30B24B41/061B24B49/14
Inventor 黄见翎詹政勋
Owner TAIWAN SEMICON MFG CO LTD
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