Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing solution and polishing method of silicon carbide crystals

The technology of polishing liquid and grinding liquid is applied in the polishing field of polishing liquid and silicon carbide crystal, which can solve the problems of low polishing rate, poor polishing effect, and difficult to crystallize, and achieve the effect of improving polishing rate, avoiding loss and firm adhesion.

Active Publication Date: 2018-12-07
BEIJING POLYSTAR HITECH CO LTD
View PDF26 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The first object of the present invention is to provide a kind of polishing fluid, and this polishing fluid has advantages such as good wetting and spreading performance, higher soft layer removal rate, not easy to crystallize, so it is used for the polishing of silicon carbide to solve the problem that the polishing rate is low. And the problem of poor polishing effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing solution and polishing method of silicon carbide crystals
  • Polishing solution and polishing method of silicon carbide crystals
  • Polishing solution and polishing method of silicon carbide crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0100] The first step, coarse grinding

[0101] Prepare the abrasive liquid that coarse grinding is used: by weight percentage, boron carbide micropowder 20.0%, median particle diameter is 20 μ m, thixotropic agent silane modified polyurea and polyhydroxy carboxylic acid amide altogether 2.0% (both weight ratio 1: 1), wetting and dispersing agent polyacrylate ammonium salt 1.0%, rust inhibitor fatty acid alkanolamide 0.5%, water balance;

[0102] Rough grinding of silicon carbide crystal surface: traditional flat grinding equipment, 4-inch silicon carbide wafer, pressure 300g / cm 2 , the rotating speed is 50rpm, the supply rate of circulating grinding liquid is 500mL / min, and the grinding time is 30min.

[0103] The second step, fine grinding

[0104] Preparation of grinding liquid for fine grinding: by weight percentage, polycrystalline diamond micropowder 0.5%, median particle size is 2 μm, solvent 95% (ethylene glycol and purified water, weight ratio 9:1), wetting and disp...

Embodiment 2-8

[0110] The polished material is the same as in Example 1, the only difference from Example 1 is that the formulation of the polishing liquid used for fine grinding changes, and the rest of the raw materials and process conditions are the same as in Example 1. The specific formula is shown in Table 1.

[0111] Table 1 Proportion of Polishing Fluid for Fine Polishing

[0112]

[0113]

Embodiment 9-17

[0115] The polished material is the same as in Example 1, and the only difference from Example 1 is that the formulation of the abrasive liquid used for rough grinding changes, and the rest of the raw materials and process conditions are the same as in Example 1. The specific formula is shown in Table 2.

[0116] The proportioning of grinding liquid used in table 2 coarse grinding

[0117]

[0118]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a polishing solution and a polishing method of silicon carbide crystals. The polishing solution comprises the following components in percentage by weight: 6-10% of nanoscalepolycrystalline diamond, 75-87% of alkaline silica sol, 1-2% of a silane coupling agent, 1-3% of an anti-crystallization agent, 1-2% of an oxidant, and the balance of amphiphilic organic matter. The polishing solution of the invention has the advantages of good wet spreading performance, high soft layer removal rate, being not prone to crystallization, and the like, and therefore polishing for silicon carbide solves the problems of low polishing rate and poor polishing effect. In addition, as the polishing solution is used in combination with a coarse grinding fluid and a fine grinding fluid,a high-speed, high-flatness, high-gloss, low-roughness polishing effect can be achieved.

Description

technical field [0001] The invention relates to the technical field of precision machining, in particular to a polishing liquid and a method for polishing silicon carbide crystals. Background technique [0002] Silicon carbide (SiC) material, due to its high thermal conductivity, high breakdown field strength, large band gap, high electron saturation drift rate, and excellent physical and chemical properties such as high temperature resistance, radiation resistance and chemical stability, has become a power semiconductor material. The third generation of semiconductor materials for devices, SiC materials and devices are developing rapidly. At present, 4-inch wafers are gradually replacing 2-inch wafers, and even 6-inch wafers are gradually replacing 4-inch wafers and become the mainstream. Controlling processing costs and improving processing efficiency are also An important trend in the development of SiC materials at present. However, since SiC has extremely high hardness...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 吴月英
Owner BEIJING POLYSTAR HITECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com