Polishing composition and polishing method for its use

A polishing composition and compound technology, applied in the field of polishing compositions

Inactive Publication Date: 2002-03-20
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, from the results of experiments conducted by the present inventors, it was found that when a polishing liquid containing only abrasives, glycine and hydrog...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-9 and comparative example 1-6

[0059] Component Content and Preparation of Polishing Compositions

[0060] Colloidal silica having various primary particle sizes as shown in Table 1 as an abrasive, glycine, histidine or α-alanine as a compound forming a chelate with copper ions (additive (b)) , benzotriazole (hereinafter referred to as "BTA") and hydrogen peroxide as a compound (additive (c)) providing protective layer formation to the copper layer were mixed with water at the ratio shown in Table 1 , to obtain the polishing compositions of Examples 1-9 and Comparative Examples 1-6. Here, in Examples 1-9, the primary particle size of the abrasive is 50-120 nm, and in Comparative Examples 1-6, the primary particle size of the abrasive is outside the above range. In addition, as hydrogen peroxide, a commercially available 31% aqueous solution was used, which was mixed immediately before polishing.

[0061] abrasive

Additive (b)

Additive (c)

hydrogen peroxide

polished

Surface ...

Embodiment 10-27 and comparative example 7-14

[0087] Component Content and Preparation of Polishing Compositions

[0088]Colloidal silica having a primary particle size of 90 nm as an abrasive, glycine as a compound forming a chelate with copper ions, BTA and hydrogen peroxide as a compound providing a protective layer-forming effect to the copper layer are mixed with water, Mixing was carried out at the ratios shown in Table 2 to obtain the polishing compositions of Examples 10-27 and Comparative Examples 7-14. Here, in Comparative Example 7 or 8, the content of abrasive is outside the range of 5-50 g / l, based on the composition; in Comparative Example 9 or 10, the content of glycine (forms chelate with copper ions The compound) is outside the range of 0.04-0.2mol / g, based on the composition; in Comparative Example 11 or 12, the content of benzotriazole (the compound that forms the protective layer for the copper layer) is 0.0002-0.002 If the content of hydrogen peroxide is outside the range of 0.03-1 mol / g, the c...

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PUM

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Abstract

A polishing composition comprising: (a) an abrasive, (b) a compound to form a chelate with copper ions (c) a compound to provide a protective layer-forming function to a copper layer, (d) hydrogen peroxide, and (e) water, wherein the abrasive of component (a) has a primary particle size within a range of from 50 to 120 nm. This is used for polishing a semiconductor device having at least a layer of copper and a layer of a tantalum-containing compound formed on a substrate.

Description

technical field [0001] The present invention relates to a kind of polishing composition that is used for polishing the base material of semiconductor, photomask and various memory hard disks, be specifically related to a kind of polishing composition that is used for polishing the plane of device wafer to make it flat such as in semiconductor industry, It also relates to a polishing method using the composition. [0002] More particularly, the present invention relates to a polishing composition for efficiently forming an excellent polished surface in a polishing step of applying a so-called chemical mechanical polishing technique to a semiconductor device in the process of processing a device wafer; It relates to a polishing method using the composition. Background technique [0003] So-called high-tech products including computers have been greatly advanced in recent years, and components for these products, such as devices such as ULSI, have been developed year by year i...

Claims

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Application Information

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IPC IPC(8): B24B37/00C09G1/02C09K3/14C23F3/06H01L21/304
CPCC09K3/1463C09G1/02C23F3/06C09K3/1409C09K3/14
Inventor 酒井谦儿浅野宏北村忠浩伊奈克芳
Owner FUJIMI INCORPORATED
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