A kind of preparation method of n-type bismuth telluride-based thermoelectric material

A thermoelectric material, bismuth telluride-based technology, applied in thermoelectric devices, thermoelectric devices, circuits, etc. with thermal changes in dielectric constant, can solve unfavorable electrical and thermal performance synergistic optimization, limited improvement of material ZT value, and damage to orientation structure and other problems, to achieve the effect of reducing the thermal conductivity of the lattice, increasing the ZT value, and improving the coordinated regulation

Inactive Publication Date: 2021-10-22
BEIJING INSTITUTE OF PETROCHEMICAL TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Improve N-type Bi in the prior art 2 Te 3 The main method of thermoelectric performance is to optimize its electrical properties through doping, but this method makes the improvement of the ZT value of the material very limited; and the use of nanometerization and other methods to improve the N-type Bi 2 Te 3 The thermoelectric properties will destroy its orientation structure, which is not conducive to the synergistic optimization of electrical and thermal properties.

Method used

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  • A kind of preparation method of n-type bismuth telluride-based thermoelectric material
  • A kind of preparation method of n-type bismuth telluride-based thermoelectric material
  • A kind of preparation method of n-type bismuth telluride-based thermoelectric material

Examples

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example 1

[0039] Example 1, with N-type Bi 2 Te 2.7 Se 0.3 The stoichiometric ratio of the raw materials Bi, Te, Se powder is weighed, and the original powder is placed in a quartz tube and evacuated to 10 -5 After Pa post-packaging treatment, the quartz tube was melted in a swing furnace at 800°C for 4 hours and then cooled to room temperature with the furnace;

[0040] Then put the quartz tube into the zone melting growth furnace, set the zone melting conditions: melting temperature 720°C, heating rate 25°C / min, melting zone width 30mm, temperature gradient 25°C / cm, growth rate 25mm / h, to prepare N Type Bi 2 Te 2.7 Se 0.3 crystal material.

[0041] N-type Bi 2Te 2.7 Se 0.3 crystal as a reaction matrix, an appropriate amount of I 2 The powder is placed on both ends of the quartz tube as an insertion compound, and the quartz tube is evacuated (to 10 -5 Pa) after the sealing treatment, it is placed horizontally in a tube furnace with zoneable temperature control, and the bismu...

example 2

[0046] Example 2, with N-type Bi 2 Te 2.7 Se 0.3 The stoichiometric ratio of the raw materials Bi, Te, Se powder is weighed, and the original powder is placed in a quartz tube and evacuated to 10 -5 After Pa packaging treatment, the quartz tube is melted in a swing furnace at 800°C for 4 hours and then cooled to room temperature with the furnace; then the quartz tube is placed in a zone melting growth furnace, and the zone melting conditions are set: melting temperature 720°C, heating rate 25 ℃ / min, melting zone width 30mm, temperature gradient 25℃ / cm, growth rate 25mm / h, prepared N-type Bi 2 Te 2.7 Se 0.3 crystal material. N-type Bi 2 Te 2.7 Se 0.3 crystal as a reaction matrix, an appropriate amount of I 2 The powder is placed on both ends of the quartz tube as an insertion compound, and the quartz tube is evacuated (to 10 -5 Pa) after the sealing treatment, it is placed horizontally in a tube furnace with zoneable temperature control, and the bismuth telluride regi...

example 3

[0048] Example 3, with N-type Bi 2 Te 2.7 Se 0.3 The stoichiometric ratio of the raw materials Bi, Te, Se powder is weighed, and the original powder is placed in a quartz tube and evacuated to 10 -5 After Pa packaging treatment, the quartz tube is melted in a swing furnace at 800°C for 4 hours and then cooled to room temperature with the furnace; then the quartz tube is placed in a zone melting growth furnace, and the zone melting conditions are set: melting temperature 720°C, heating rate 25 ℃ / min, melting zone width 30mm, temperature gradient 25℃ / cm, growth rate 25mm / h, prepared N-type Bi 2 Te 2.7 Se 0.3 crystal material. N-type Bi 2 Te 2.7 Se 0.3 crystal as a reaction matrix, an appropriate amount of I 2 The powder is placed on both ends of the quartz tube as an insertion compound, and the quartz tube is evacuated (to 10 -5 Pa) after the sealing treatment, it is placed horizontally in a tube furnace with zoneable temperature control, and the bismuth telluride regi...

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Abstract

The invention discloses a preparation method of an N-type bismuth telluride-based thermoelectric material. Firstly, the corresponding raw materials are weighed according to the stoichiometric ratio of the N-type bismuth telluride-based crystal material, placed in a quartz tube for vacuum packaging, and shaken at high temperature. Melting, using the zone melting method to prepare N-type bismuth telluride-based crystal materials; using N-type bismuth telluride-based crystal materials as a reaction matrix, using I 2 The molecule is used as an insertion compound, and the reaction matrix and the insertion compound are placed at both ends of the quartz tube; the area where the reaction matrix and the insertion compound are placed is simultaneously heated to a certain temperature and kept warm to realize the I 2 Molecular adsorption; and then the two areas were lowered to room temperature by means of zonal cooling to obtain I 2 Molecularly embedded N-type bismuth telluride-based thermoelectric materials. This method not only ensures the orientation and electrical properties of N-type Bismuth Telluride, but also reduces the lattice thermal conductivity, thereby realizing the coordinated regulation of the electrical and thermal transport properties of N-type Bismuth Telluride-based thermoelectric materials and the adjustment of the ZT value. improve.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, in particular to a preparation method of N-type bismuth telluride-based thermoelectric materials. Background technique [0002] Thermoelectric materials are a class of functional materials based on the Seebeck effect and Peltier effect of semiconductors to achieve direct mutual coupling between thermal energy and electrical energy. Due to their own advantages such as no pollution, no noise, small size, long life, and precise control, Thermoelectric materials have broad application prospects in thermoelectric power generation and semiconductor refrigeration. The main parameter to measure the performance of thermoelectric materials is called thermoelectric figure of merit, ZT=α 2 σT / κ, where α is the Seebeck coefficient, σ is the electrical conductivity, and κ is the thermal conductivity (including the lattice thermal conductivity κ L and electronic thermal conductivity κ e ), T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L37/02H01L37/00
CPCH10N15/00H10N15/15
Inventor 张婷何新民陈飞
Owner BEIJING INSTITUTE OF PETROCHEMICAL TECHNOLOGY
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