Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-performance silver-tellurium compound thermoelectric semiconductor material and preparation method thereof

A technology of thermoelectric semiconductors and tellurium compounds, which is applied in the fields of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., can solve problems such as difficulty in thermoelectric performance, and achieve the effect of high thermoelectric performance and high mechanical strength

Inactive Publication Date: 2018-07-31
TONGJI UNIV
View PDF3 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Since S, σ, κ E There is a strong coupling relationship between them, which makes it very difficult to achieve high thermoelectric performance by simply optimizing a certain parameter

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-performance silver-tellurium compound thermoelectric semiconductor material and preparation method thereof
  • High-performance silver-tellurium compound thermoelectric semiconductor material and preparation method thereof
  • High-performance silver-tellurium compound thermoelectric semiconductor material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] A method for preparing a high-performance silver-tellurium compound thermoelectric semiconductor material preferably includes the following steps:

[0044] (1) Vacuum packaging: the elemental elements Ag and Te are vacuum packaged in a quartz tube according to the stoichiometric ratio;

[0045] (2) Melting quenching: putting the quartz tube with the raw material in step (1) into a pit furnace for heating, so that the raw material is melted and fully reacted, and then quenched to obtain the first ingot;

[0046] (3) Annealing and quenching: the first ingot obtained in step (2) is re-vacuum-encapsulated in a quartz tube, then placed in a pit furnace for heating, annealed at a high temperature, and then quenched to obtain a second ingot;

[0047] (4) Hot-press sintering: Grind the second ingot obtained in step (3) into powder, then place it in a graphite mold, carry out vacuum hot-press sintering, and then lower the temperature to obtain a sheet-like bulk material, which i...

Embodiment 1

[0055] A kind of silver telluride thermoelectric material, its chemical formula is Ag 5-x Te 3 , x=-0.04~0.14, in the present embodiment by getting x=-0.04,-0.02, 0, 0.02, 0.08 and 0.12 (when x=0, the chemical formula is Ag 5 Te 3 , when x=-0.04, -0.02, 0.02, 0.08 and 0.12, that is, by changing different concentrations of Ag to optimize the composition of the second phase and the matrix phase), according to the following preparation methods, different second items and matrix phases are obtained Composition Ratio of Ag 5-x Te 3 Block material:

[0056] (1) According to different values ​​of x, the chemical formula is Ag 5-x Te 3 The stoichiometric ratio of (x=-0.04~0.14) weighs the elemental raw materials silver Ag and tellurium Te with a purity greater than 99.99%, places the raw materials in a quartz tube, and seals the quartz tube under vacuum.

[0057] (2) Hang the quartz tube containing the raw materials in a high-temperature well-type furnace, slowly raise the temp...

Embodiment 2

[0067] Compared with Example 1, except that x takes a value of 0.14 in this example, all the others are the same.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Optical bandgapaaaaaaaaaa
Login to View More

Abstract

The invention relates to a high-performance silver-tellurium compound thermoelectric semiconductor material and a preparation method thereof. The chemical formula of the silver-tellurium compound thermoelectric semiconductor material is Ag5-xTe3, wherein x satisfies a relational expression that -0.04<=x<=0.14. According to the preparation of the silver-tellurium compound thermoelectric semiconductor material, high-purity simple substances are adopted as raw materials; the materials are selected according to a stoichiometric ratio in the above chemical formula; and the materials are subjected to vacuum encapsulation, high-temperature melting, annealing and heat treatment, and obtained substances are ground into powder, and the powder is subjected to vacuum hot-pressing and sintering, and slow cooling, so that a sheet-like block material is obtained, the sheet-like block material is a target product. Compared with the prior art, the thermoelectric semiconductor material of the inventionproduced by using the preparation method of the invention has the advantages of extremely low thermal conductivity and high thermoelectric performance; the lattice thermal conductivity of the thermoelectric material is as low as 0.18 to 0.25W / m.K in a full temperature range; the thermoelectric figure of merit of the thermoelectric material reaches 1.0 when temperature reaches 650K; and the thermoelectric material has a great potential. With the invention adopted, a preparation process for obtaining a high-quality polycrystalline sample is explored.

Description

technical field [0001] The invention relates to the technical field of new energy materials, in particular to an Ag with high thermoelectric performance 5-x Te 3 Semiconductor materials and methods for their preparation. Background technique [0002] Thermoelectric semiconductor materials, as a new type of energy material with zero emissions and no rotating parts, can realize the conversion between waste heat and electric energy, which is considered to be an effective solution to improve the increasingly serious energy crisis. The bottleneck that limits the large-scale application of thermoelectric semiconductor materials is their relatively low conversion efficiency, which is usually measured by the dimensionless thermoelectric quality zT, zT=S 2 σT / κ, where: T is the absolute temperature, S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, determined by the electronic thermal conductivity κ E and lattice thermal conductivity κ ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 裴艳中李文张馨月
Owner TONGJI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com