N-type antimonous trimagnetite scandium-doped alloy thermoelectric material and preparation method thereof

A technology of trimagnesium diantimony and thermoelectric materials, which is applied in the direction of thermoelectric device junction lead-out materials, etc., can solve problems such as interface phase defects and affect material transport performance, and achieve simple dopant and facilitate material stability , the effect of strong competitiveness

Inactive Publication Date: 2020-04-24
TONGJI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, magnesium's high saturated vapor pressure, corrosion, and high melting point often lead to the presence of interfacial phases and defects that affect the transport properties of this material

Method used

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  • N-type antimonous trimagnetite scandium-doped alloy thermoelectric material and preparation method thereof
  • N-type antimonous trimagnetite scandium-doped alloy thermoelectric material and preparation method thereof
  • N-type antimonous trimagnetite scandium-doped alloy thermoelectric material and preparation method thereof

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preparation example Construction

[0059] The second technical solution of the present invention is to provide a method for preparing an N-type trimagnesium diantimony doped scandium alloy thermoelectric material, comprising the following steps:

[0060] (1) Vacuum packaging:

[0061] Weigh the elemental raw materials Mg, Bi, Sb and Sc according to the stoichiometric ratio, put them into a tantalum tube for vacuum packaging, then put the sealed tantalum tube into a quartz tube and vacuum package;

[0062] (2) Melt quenching:

[0063] Heating the quartz tube of the tantalum tube containing the elemental raw material, so that the raw material is fully reacted in the molten state, quenched, and the first ingot is obtained;

[0064] (3) Annealing and quenching:

[0065] Re-vacuum-encapsulating the first ingot obtained in step (2) in a quartz tube, heating, annealing at a high temperature, and then quenching to obtain a second ingot;

[0066] (4) hot pressing sintering:

[0067] The second ingot obtained in step...

Embodiment 1

[0076] A kind of trimagnesium antimony alloy thermoelectric material, its chemical formula is Mg 3.05-x sc x Sb 2-y Bi y , wherein, 03 Bi 2 To optimize the carrier concentration, mobility and reduce the lattice thermal conductivity, prepare Mg with different carrier concentrations according to the following preparation method 3.05-x sc x Sb 2-y Bi y Block material:

[0077] (1) According to different values ​​of y, the chemical formula is Mg 3.05-x sc x Sb 2-y Bi y (y=0.5~1) stoichiometric ratio Weigh the elemental raw materials Mg, Bi, Sb and Sc with a purity greater than 99.99%, put them into tantalum tubes and vacuum seal them by arc melting, then put the sealed tantalum tubes into quartz tubes In and vacuum packaged.

[0078](2) Hang the quartz tube containing the raw materials in a high-temperature well-type furnace, slowly raise the temperature to 1100-1170°C at a rate of 150-200°C per hour, keep it warm for 6-8 hours, and then quickly quench and cool to obta...

Embodiment 2

[0097] Compared with Example 1, most of them are the same, except that in this example, the sintering temperature in step (4) is 550° C., and the sintering pressure is 100 MPa.

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Abstract

The invention relates to an N-type antimonous trimagnetite scandium-doped alloy thermoelectric material and a preparation method thereof. The chemical formula of the thermoelectric material is Mg<3.05-x>Sc<x>Sb<2-y>Bi<y>, wherein y is greater than 0 and less than or equal to 1, and x is greater than 0 and less than or equal to 0.03. Compared with the prior art, cationic electrons are introduced byimproving scandium doping through the solid solution of bismuth trimagnetite, so that carrier concentration and lattice thermal conductivity are regulated and controlled at the same time; the contentof magnesium oxide in the grain boundary of N-type Mg3Sb<2> alloy is reduced through tantalum packaging smelting, so that high mobility is shown. The simple and controllable technology can be widelyapplied to various thermoelectric materials, especially materials with a large number of intrinsic defects, and therefore, a new method is provided for improving thermoelectric performance.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and relates to an N-type trimagnesium diantimony-doped scandium alloy thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric semiconductor materials are a class of materials that can directly convert heat energy to electrical energy. This material has the advantages of no emissions and no rotating parts, which is conducive to alleviating the energy crisis. The bottleneck that limits the large-scale application of thermoelectric semiconductor materials is their relatively low conversion efficiency, which can usually be measured by the dimensionless thermoelectric figure of merit zT, zT=S 2 σT / κ, where: T is the absolute temperature, S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, determined by the electronic thermal conductivity κ E and lattice thermal conductivity κ L It consists of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/02C22F1/00C22C1/04B22F3/14H01L35/18
CPCC22C1/02C22F1/002C22F1/00B22F3/14B22F2999/00C22C1/047H10N10/853B22F2201/20
Inventor 裴艳中李文史雪敏
Owner TONGJI UNIV
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