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NbFeSb-based high-entropy thermoelectric material, preparation method thereof and thermoelectric device

A technology of thermoelectric materials and thermoelectric devices, which is applied in the manufacture/processing of thermoelectric devices, materials for lead-out wires of thermoelectric devices, etc., can solve the problems of high thermal conductivity, achieve low lattice thermal conductivity, high efficiency, and easy process conditions control effect

Inactive Publication Date: 2018-04-20
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a NbFeSb-based high-entropy thermoelectric material and its preparation method, in order to solve the technical problem that the thermal conductivity of the existing thermoelectric material is too high

Method used

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preparation example Construction

[0025] Correspondingly, on the other hand, the embodiment of the present invention also provides a preparation method of the above-mentioned NbFeSb-based high-entropy thermoelectric material. This preparation method comprises the steps:

[0026] S01. According to Nb 1-x m x FeSb 1-y sn y The stoichiometric ratio of each metal source raw material is weighed, wherein, the x=0.2~0.8; y=0~0.3, and the M includes any 4 of V, Ti, Hf, Zr, Sc, Y, Ta, Mo elements - 5 elements;

[0027] S02. Smelting the weighed metal sources in a protective atmosphere, followed by annealing.

[0028] Specifically, the stoichiometry in the above step S01 may but not only represent the molar ratio. Among them, Nb 1-x m x FeSb 1- y sn y y in is preferably 0.05 to 0.3. Further, the content of M metal can be controlled by setting the value of x. For example, in one embodiment, the content of each element represented by M at the Nb site is controlled to be 2-20 at.%. In a specific embodiment, the...

Embodiment 1

[0041] This embodiment provides a NbFeSb-based high-entropy thermoelectric material and a preparation method thereof. The NbFeSb-based high-entropy thermoelectric material is Nb 0.8 m 0.2 FeSb. M is V, Ti, Hf, Mo, Zr, and the elements shown by M are in equal proportions, that is, the molar ratio of V, Ti, Hf, Mo, and Zr is 1:1:1:1:1, that is, NbFeSb group High entropy thermoelectric material as Nb 0.8 (Ti 0.2 V 0.2 Mo 0.2 f 0.2 Zr 0.2 ) 0.2 FeSb.

[0042] Its preparation method is as follows:

[0043] S11: According to Nb 0.8 (Ti 0.2 V 0.2 Mo 0.2 f 0.2 Zr 0.2 ) 0.2 The stoichiometric ratio of FeSb is measured from each metal source, and it is required to be accurate to 4 decimal places when measuring each metal raw material;

[0044] S12: Mix the weighed elements into the sample tank of the arc melting furnace. When the vacuum degree reaches 10 -3 When the Pa is below, it is filled with protective gas argon, and then discharges at a current of 100A to genera...

Embodiment 2

[0047] This embodiment provides a NbFeSb-based high-entropy thermoelectric material and a preparation method thereof. The NbFeSb-based high-entropy thermoelectric material is Nb 0.8 m 0.2 FeSb. M is Ti, Hf, Mo, Zr, and the proportions of the elements represented by M are equal, that is, the molar ratio of Ti, Hf, Mo, and Zr is 1:1:1:1, that is, the NbFeSb-based high-entropy thermoelectric material is ( Ti 0.25 Mo 0.25 f 0.25 Zr 0.25 ) 0.2 Nb 0.8 FeSb.

[0048] Its preparation method is as follows:

[0049] S21: According to (Ti 0.25 Mo 0.25 f 0.25 Zr 0.25 ) 0.2 Nb 0.8 The stoichiometric ratio of FeSb is measured from each metal source, and it is required to be accurate to 4 decimal places when measuring each metal raw material;

[0050] S22: Mix the weighed elements into the sample tank of the high-frequency melting furnace. When the vacuum degree reaches 10 -3 When Pa is lower than Pa, it is filled with protective gas argon, and the current is 100A to gradual...

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Abstract

The invention discloses a NbFeSb-based high-entropy thermoelectric material, a preparation method thereof and application thereof. The chemical formula of the NbFeSb-based high-entropy thermoelectricmaterial is Nb1-xMxFeSb1-ySny, x=0.1 to 0.8, y=0 to 0.3, and M comprises any 4 to 5 elements in V, Ti, Hf, Zr, Sc, Y, Ta and Mo elements. The preparation method comprises the steps of weighing and taking pure metal raw materials according to a stoichiometric ratio of the elements contained in the NbFeSb-based high-entropy thermoelectric material and carrying out melting and annealing treatment anddischarge plasma sintering. The NbFeSb-based high-entropy thermoelectric material of the invention has a low lattice thermal conductivity. The process conditions of the preparation method of the NbFeSb-based high-entropy thermoelectric material are easy to control, the stability of microtopography and physicochemical properties of the prepared NbFeSb-based high-entropy thermoelectric material areensured, the efficiency of preparation is high, and the production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric conversion, and in particular relates to a NbFeSb-based high-entropy thermoelectric material, a preparation method thereof, and a thermoelectric device. Background technique [0002] With the rapid development of economic globalization, coal, oil, natural gas and other non-renewable energy are consumed in large quantities, and energy utilization is becoming more and more tense, and this type of energy has very serious pollution to the environment. At present, researchers are devoting themselves to the development of environmentally friendly new energy sources and how to improve the efficiency of renewable energy use to deal with the current increasingly serious environmental pollution and energy shortage problems. Solid-state thermoelectric conversion technology is an environmentally friendly energy conversion technology that directly converts heat energy to electrical energy and has broad ...

Claims

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Application Information

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IPC IPC(8): H01L35/18H01L35/34
CPCH10N10/853H10N10/01
Inventor 刘福生颜建龙敖伟琴李均钦张朝华
Owner SHENZHEN UNIV
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