ZrNiSn-based high-entropy thermoelectric material and preparation method thereof and thermoelectric device
A technology of thermoelectric materials and thermoelectric devices, applied in the field of ZrNiSn-based high-entropy thermoelectric materials and their preparation, and thermoelectric devices, can solve the problems of high thermal conductivity, achieve low lattice thermal conductivity, stable microscopic morphology and physical and chemical properties, and good The effect of corrosion resistance and oxidation resistance
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[0025] Correspondingly, on the other hand, the embodiment of the present invention also provides a preparation method of the above-mentioned ZrNiSn-based high-entropy thermoelectric material. This preparation method comprises the steps:
[0026] S01. According to Zr 1-x m x Ni 1-y co y sn 1-z Sb z The stoichiometric ratio of each metal source raw material is weighed, wherein, the x=0.2~0.8, y=0~0.2, z=0~0.3, and the M includes V, Nb, Hf, Ti, Sc, Y, Ta , any 4-5 elements in the Mo element;
[0027] S02. Smelting the weighed metal sources in a protective atmosphere, followed by annealing.
[0028] Specifically, the stoichiometry in the above step S01 may but not only represent the molar ratio. Among them, Zr 1-x m x Ni 1- y co y sn 1-z Sb zy in is preferably 0.05 to 0.2, and z is preferably 0.1 to 0.3. Further, the metal content of M can be controlled by setting the value of x. For example, in one embodiment, the molar content of each element represented by M at ...
Embodiment 1
[0041] This embodiment provides a ZrNiSn-based high-entropy thermoelectric material and a preparation method thereof. The ZrNiSn-based high-entropy thermoelectric material is Zr 0.2 m 0.8 NiSn. M is Sc, Ti, Hf, Nb, and the proportions of the elements represented by M are equal, that is, the molar ratio of Sc, Ti, Hf, and Nb is 1:1:1:1, that is, the ZrNiSn-based high-entropy thermoelectric material is ( sc 0.25 Ti 0.25 Hf 0.25 Nb 0.25 ) 0.8 Zr 0.2 NiSn.
[0042] Its preparation method is as follows:
[0043] S11: according to (Sc 0.25 Ti 0.25 Hf 0.25 Nb 0.25 ) 0.8 Zr 0.2 The stoichiometric ratio of NiSn is to measure each metal source, and it is required to be accurate to 4 decimal places when measuring each metal raw material;
[0044] S12: Mix the weighed elements into the sample tank of the arc melting furnace. When the vacuum degree reaches 10 -3 When the Pa is below, it is filled with protective gas argon, and then discharges at a current of 100A to genera...
Embodiment 2
[0047] This embodiment provides a ZrNiSn-based high-entropy thermoelectric material and a preparation method thereof. The ZrNiSn-based high-entropy thermoelectric material is Zr 0.2 m 0.8 NiSn. M is Sc, V, Hf, Nb, and the proportions of the elements represented by M are equal, that is, the molar ratio of Y, Ti, Hf, and Nb is 1:1:1:1, that is, the ZrNiSn-based high-entropy thermoelectric material is ( sc 0.25 V 0.25 Hf 0.25 Nb 0.25 ) 0.8 Zr 0.2 NiSn.
[0048] Its preparation method is as follows:
[0049] S21: According to (Sc 0.25 V 0.25 Hf 0.25 Nb 0.25 ) 0.8 Zr 0.2 The stoichiometric ratio of NiSn is to measure each metal source, and it is required to be accurate to 4 decimal places when measuring each metal raw material;
[0050] S22: Mix the weighed elements into the sample tank of the high-frequency melting furnace. When the vacuum degree reaches 10 -3 When Pa is lower than Pa, it is filled with protective gas argon, and the current is 100A to gradually in...
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