Method for improving multi-value storage characteristic of In2Se3 phase change material

A multi-value storage and phase change material technology, applied in the semiconductor field, can solve the problems of low crystallization temperature, phase separation, hidden dangers, etc., and achieve the effects of reducing thermal conductivity, increasing resistivity, and improving resistivity contrast.

Inactive Publication Date: 2020-10-16
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The phase change material plays a decisive role in the performance of PCRAM. The traditional phase change material GST-225 has many problems, such as low crystallization temperature and potential phase separation.

Method used

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  • Method for improving multi-value storage characteristic of In2Se3 phase change material
  • Method for improving multi-value storage characteristic of In2Se3 phase change material
  • Method for improving multi-value storage characteristic of In2Se3 phase change material

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Embodiment 1

[0054] Such as figure 1 As shown, a boost In2 Se 3 A method for multi-valued storage characteristics of a phase change material, said method comprising the steps of:

[0055] S1, establish the α-phase and β-phase crystal models of In2Se3 respectively, comprising 15 atoms in total, the model building software of the embodiment of the present invention is VESTA, exported as a POSCAR file;

[0056] S2. Replace the tetrahedral In atoms in the α phase with Sc at 8.3% respectively to form a doping system model for the tetrahedral sites of the α phase, with a total of 60 atoms,

[0057] as well as,

[0058] Replace the octahedral In atoms in the α phase with Sc at 8.3% to form a doping system model of the octahedral sites in the α phase, with a total of 60 atoms, and export it as a POSCAR file;

[0059] S3. Replace the octahedral In atoms in the β phase with Sc at 8.3% respectively to form a doping system model of the octahedral sites of the β phase, with a total of 60 atoms, and ...

Embodiment 2

[0069] Such as figure 1 As shown, a boost In 2 Se 3 A method for multi-valued storage characteristics of a phase change material, said method comprising the steps of:

[0070] S1, establish the α-phase and β-phase crystal models of In2Se3 respectively, comprising 15 atoms in total, the model building software of the embodiment of the present invention is VESTA, exported as a POSCAR file;

[0071] S2. Replace the tetrahedral In atoms in the α phase with Sc at 16.7% to form a doping system model for the tetrahedral sites of the α phase, with a total of 60 atoms,

[0072] as well as,

[0073] Replace the octahedral In atoms in the α phase with Sc at 16.7% to form a doping system model for the octahedral sites of the α phase, with a total of 60 atoms, and export it as a POSCAR file;

[0074] S3. Replace the octahedral In atoms in the β phase with Sc at 16.7% to form a doping system model of the octahedral sites in the β phase, with a total of 60 atoms, and export it as a POSCA...

Embodiment 3

[0083] Such as figure 1 As shown, a boost In 2 Se 3 A method for multi-valued storage characteristics of a phase change material, said method comprising the steps of:

[0084] S1, establish the α-phase and β-phase crystal models of In2Se3 respectively, comprising 15 atoms in total, the model building software of the embodiment of the present invention is VESTA, exported as a POSCAR file;

[0085] S2. Replace the tetrahedral In atoms in the α phase with Sc at 25% respectively to form a doping system model for the tetrahedral sites of the α phase, with a total of 60 atoms,

[0086] as well as,

[0087] Replace the octahedral In atoms in the α phase with Sc at 25% to form a doping system model of the octahedral sites in the α phase, with a total of 60 atoms, and export it as a POSCAR file;

[0088] S3. Replace the octahedral In atoms in the β phase with Sc at 25% respectively to form a doping system model of the octahedral sites of the β phase, with a total of 60 atoms, and e...

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Abstract

The invention discloses a method for improving the multi-value storage characteristic of an In2Se3 phase change material. The method comprises the following steps: constructing crystal models of an alpha phase and a beta phase of In2Se3; respectively replacing tetrahedral In atoms and octahedral In atoms in the alpha phase with Sc in proportion to form an alpha-phase tetrahedral doping system model and an octahedral doping system model; replacing the octahedral In atoms in the beta phase with Sc in proportion to form a beta-phase octahedral doping system model; establishing models of elementalIn and elemental Sc; optimizing the model; calculating the doping formation energy of the alpha phase and the beta phase; calculating the total energy, the state density, the energy band structure and the elastic constant of the optimization model; calculating the electrical conductivity and the electronic thermal conductivity; calculating the relationship between the lattice thermal conductivityand the temperature; and comparing the thermal conductivity and the electrical conductivity before and after doping to obtain the phase change material with better performance. Metal elements meetinga certain condition are doped into the metal oxide, so the storage performance of the metal oxide can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving In 2 Se 3 A method for multi-valued storage properties of phase change materials. Background technique [0002] With the continuous deepening of social informatization, the amount of data generated by people's life and production is showing an explosive growth trend, which poses a huge challenge to the electronics and information industries. At present, the storage density, read and write speed of data storage devices, Data retention is also difficult to meet the requirements. [0003] People urgently need new computer hardware to meet the demand. Among the computer components, IO devices have become the biggest bottleneck, so the progress of storage technology has become the key. The main storage devices now include HDD, FLASH and DRAM. [0004] The storage principle of HDD is based on the giant magnetoresistance effect. The magnetic head scans a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C13/00
CPCG11C13/0004H10N70/231H10N70/8825
Inventor 王嘉赋李平安余念念孙志刚
Owner WUHAN UNIV OF TECH
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