The invention discloses a method for detecting a ultra-high-purity
germanium single crystal < 100 >
crystal orientation defect. The method comprises the following steps: step 1, taking wafers: taking
single crystal wafers from two ends of a
crystal section with qualified purity of the ultra-high-purity
germanium single crystals, and milling and
grinding single surfaces of the
single crystal wafers to be flat and smooth; step 2, preparing a corrosive liquid; step 3, corroding the single
crystal wafers; step 4, carrying out cleaning and blow-
drying; step 5, detection: firstly observing whether the surface of the single crystal
wafer has defects, and if so, determining which defect is a discoid pit, a coefficient structure body and a mosaic structure by using a metallographic
microscope; and carrying out
dislocation detection on the single crystal wafers; and step 6, obtaining a defect graph: marking the defects of the
crystal model, the discoid pit, the coefficient structure body, the mosaic structure, the
dislocation density of the detection point and the
dislocation density EPD of the single crystal
wafer on the defect drawing. The defect graph obtained through the method is composed of the dislocation density, the discoid pit, the coefficient structural body and the mosaic structure, and the defect type, the distribution condition and the numerical value of the single crystal
wafer can be visually seen.