The invention relates to a
vanadium pentoxide-doped resistive material as well as a construction method and a performance
simulation method thereof, and belongs to the technical field of resistive materials. Aiming at the problems of strong randomness and unstable electrical properties of the existing
vanadium pentoxide resistive material
conductive filament, the invention provides the resistive material improved by atom substitution
doping. The material adopts
vanadium pentoxide with a 1 * 2 * 2
cell expansion structure, and aluminum,
silicon or
gallium atoms replace vanadium atoms to realize
doping. According to the technical scheme, the method comprises the steps of constructing a doped
crystal model, carrying out structure optimization based on a
first principle, and carrying out electrical property
simulation calculation. According to the invention, the
electrical stability of the resistive
random access material can be effectively improved, the forming uniformity and
directivity of the
conductive filament can be obviously improved, the
oxygen vacancy migration efficiency can be improved, the
thermal stability is good, and an important theoretical basis is provided for the design of a high-performance
resistive random access memory.