The invention discloses a
single crystal silicon crystal pulling and shouldering method and a
single crystal silicon crystal pulling method for reducing the
breakage rate, and belongs to the technical field of
single crystal, the method comprises the following steps: S1, establishing a shouldering
crystal model,
model parameters being a shouldering height value and a shouldering angle value; s2, in the shouldering stage, the
diameter growth rate of the current crystal is calculated and compared with a preset shouldering
crystal model, and if the
diameter growth rate of the current crystal is gt, the
diameter growth rate of the current crystal is gt; a standard growth rate at a current stage or a diameter gt detected by a current camera
system; s1, if the diameter of the preset shouldering
crystal model at the same height is equal, the pulling speed is increased, the upper limit of the increased pulling speed is the highest pulling speed of each stage, and if the increased pulling speed is not enough, the amplitude of power reduction is slowed down at the same time; if the diameter growth rate of the current crystal is lt; a current-stage standard growth rate, or a diameter lt detected by a current camera
system; and S1, if the diameter of the shouldering
crystal model at the same height is preset, the pulling speed is lowered, the
lower limit of lowering the pulling speed is the lowest pulling speed of each stage, and if the lowered pulling speed is not enough, the amplitude of power reduction is increased at the same time. According to the invention, the line breaking rate is reduced by nearly half, the per unit yield is improved, and the head
oxygen content difference is small.