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Method for detecting ultra-high-purity germanium single crystal < 100 > crystal orientation defect

A detection method and germanium single crystal technology, applied in the direction of measuring device, test crystal, test sample preparation, etc.

Pending Publication Date: 2022-02-25
安徽光智科技有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The detection of defects in ultra-high-purity germanium single crystals published now only discloses the detection of dislocations. Therefore, a detection method is needed to completely detect defects in ultra-high-purity germanium single crystals.

Method used

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  • Method for detecting ultra-high-purity germanium single crystal &lt; 100 &gt; crystal orientation defect
  • Method for detecting ultra-high-purity germanium single crystal &lt; 100 &gt; crystal orientation defect
  • Method for detecting ultra-high-purity germanium single crystal &lt; 100 &gt; crystal orientation defect

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Embodiment 1

[0040] Step 1, taking slices: take a single wafer with a thickness of 3 mm from both ends of the ultra-high-purity germanium single crystal purity-qualified crystal section, and mill and grind one side of the single wafer to make it smooth;

[0041] Step 2, configure the corrosion solution: nitric acid: hydrofluoric acid: 10% copper nitrate = 1:2:1;

[0042] Step 3: Etching the single wafer: put the single wafer into the etching solution, with the flat and smooth side facing upwards, and rotate the single wafer in the same direction at a speed of 125r / min for 5 minutes to etch out uniform bright spots;

[0043] Step 4, cleaning and drying: clean the corroded single wafer with pure water, and dry it with nitrogen;

[0044] Step 5, detection: it is observed that the surface of the single wafer contains defects, and it is confirmed with a metallographic microscope that it is a coefficient structure (such as image 3 ), and record the distribution and quantity of its defects on t...

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Abstract

The invention discloses a method for detecting a ultra-high-purity germanium single crystal < 100 > crystal orientation defect. The method comprises the following steps: step 1, taking wafers: taking single crystal wafers from two ends of a crystal section with qualified purity of the ultra-high-purity germanium single crystals, and milling and grinding single surfaces of the single crystal wafers to be flat and smooth; step 2, preparing a corrosive liquid; step 3, corroding the single crystal wafers; step 4, carrying out cleaning and blow-drying; step 5, detection: firstly observing whether the surface of the single crystal wafer has defects, and if so, determining which defect is a discoid pit, a coefficient structure body and a mosaic structure by using a metallographic microscope; and carrying out dislocation detection on the single crystal wafers; and step 6, obtaining a defect graph: marking the defects of the crystal model, the discoid pit, the coefficient structure body, the mosaic structure, the dislocation density of the detection point and the dislocation density EPD of the single crystal wafer on the defect drawing. The defect graph obtained through the method is composed of the dislocation density, the discoid pit, the coefficient structural body and the mosaic structure, and the defect type, the distribution condition and the numerical value of the single crystal wafer can be visually seen.

Description

technical field [0001] The invention relates to the field of defect detection of ultra-high-purity germanium single crystals, in particular to a detection method for <100> crystal orientation defects of ultra-high-purity germanium single crystals. Background technique [0002] The integrity specifications of ultra-high-purity germanium single crystals require four aspects: dislocations, disc pits, coefficient structures, and mosaic structures. The published detection of ultra-high-purity germanium single crystal defects only discloses the detection of dislocations. Therefore, a detection method is needed to completely detect ultra-high-purity germanium single crystal defects. Contents of the invention [0003] In view of the problems existing in the background technology, the purpose of the present disclosure is to provide a detection method for <100> crystal orientation defects in ultra-high-purity germanium single crystals. [0004] In order to achieve the a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/84G01N1/32G01N1/34
CPCG01N21/84G01N1/32G01N1/34G01N2021/8477
Inventor 顾小英赵青松狄聚青牛晓东
Owner 安徽光智科技有限公司
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