67 results about "Crystal density" patented technology

Microdermabrasion and suction massage apparatus are included in a single unit and alternatively connectable through a mode switch to a source of vacuum. The microdermabrasion section of the unit includes a crystal pick up station operating with a venturi effect to draw crystals through a hole into an air stream. The size of the hole is variable to control crystal density. A bleed valve is provided to control crystal velocity without controlling crystal density, while a bypass valve is provided to control crystal density without controlling crystal velocity. In an associated method, a microdermabrasion procedure is performed on the skin of a patient at an operative site. The mode switch is operated to activate the suction massage apparatus within the unit. This step is followed by performing a suction massage procedure at the operative site in order to promote healing of the abraded skin. The unit can be back-flushed by connecting various portions of the unit to a pressurized output of the source of vacuum.

A metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) has a substrate in which an electron supply layer is interposed between an electron channel layer and the surface of the substrate. A pair of main electrodes are formed on the surface of the substrate. A recess is formed in the surface of the substrate between the main electrodes. A gate insulation film is formed on the surface of the substrate, at least between the first and second main electrodes, covering the inside walls and floor of the recess. A gate electrode is formed on the gate insulation film, filling in the recess. The gate insulation film has a crystal density of at least 2.9 g / cm3, which mitigates the reduction in threshold voltage caused by the recess.

Microdermabrasion and suction massage apparatus are included in a single unit and alternatively connectable through a mode switch to a source of vacuum. The microdermabrasion section of the unit includes a crystal pick up station operating with a venturi effect to draw crystals through a hole into an air stream. The size of the hole is variable to control crystal density. A bleed valve is provided to control crystal velocity without controlling crystal density, while a bypass valve is provided to control crystal density without controlling crystal velocity. In an associated method, a microdermabrasion procedure is performed on the skin of a patient at an operative site. The mode switch is operated to activate the suction massage apparatus within the unit. This step is followed by performing a suction massage procedure at the operative site in order to promote healing of the abraded skin. The unit can be back flushed by connecting various portions of the unit to a pressurized output of the source of vacuum.

An explosive composition can be produced by dissolving RDX in a volume of a first solvent to form a first solution, and adding a second solvent to the first solution. The second solvent is miscible with the first solvent, but RDX is soluble in the second solvent to an extent no greater than 1 g RDX / 100 g of the second solvent. Precipitated RDX crystals can be recovered. The RDX crystals can have a crystal density of less than 1.80 g / cm3.

The invention discloses steel with a multi-scale twin-crystal structure and a preparation method of the steel. The steel with the multi-scale twin-crystal structure is of a complex microstructure, i.e., a multi-scale twin-crystal and complex phase structure, and the hardness of the steel is reduced in a gradient way from the surface to the center. The preparation method comprises the step of preparing the steel by taking austenitic stainless steel, TRIP (Transformation-Induced Plasticity) steel or TWIP (Twinning Induced Plasticity) steel as materials by using a high strain rate deformation method or high strain rate deformation and temperature deformation treatment combined method. The twin-crystal density of the multi-scale twin-crystal structure ranges from 10% to 90% and changes along with the change of depth, and the twin-crystal density of a surface layer of the multi-scale twin-crystal structure ranges from 30% to 85%, and the twin-crystal density of the center of the multi-scale twin-crystal structure ranges from 10% to 50%. The strength and the plasticity of the steel with the multi-scale twin-crystal structure, disclosed by the invention, are synchronously enhanced; and meanwhile, the favorable ductility is kept. The steel has the highest yield strength of 900-1800MPa, the tensile strength of 1000-2000MPa and the breaking elongation of 30-50%.

An object of the present invention is to provide an extreme ultraviolet light source target which can emits extreme ultraviolet light with high emission efficiency. A solid target made of heavy metal or heavy-metal compound and having a density 0.5 to 80% that of the crystal density is used. When the target is irradiated with a laser beam, plasma of the heavy metal contained in the target is generated, and extreme ultraviolet light having a predetermined wavelength which corresponds to the kind of the heavy metal is emitted from the plasma. When the density of the target is made to be smaller than the crystal density as described above, space distribution of the density of the generated plasma can be controlled, and the region in which plasma absorbs energy of the laser beam overlaps the region in which the plasma emits the extreme ultraviolet light. Thus, emission efficiency can be improved, preventing energy loss. For example, in a case where the SnO2 target having a density 24% of the crystal density is used, the emission efficiency at around 13.5 nm wavelength is higher than in the case where a Sn crystal target is used.

The invention relates to the technical field of preparation of lithium tetraborate, and particularly discloses a preparation method of high-purity and high-density lithium tetraborate. The preparation method comprises the following steps of: carrying out purification on industrial-grade lithium hydroxide by the steps of low-temperature dissolving, filtering, evaporative concentration, cooling crystallization, centrifugal separation and the like; dissolving the purified lithium hydroxide in boiled pure water according to the mass ratio 1:2 of solid and liquid; and according to the content of the lithium hydroxide in the solution, adding the lithium hydroxide into industrial-grade boric acid for neutral reaction according to the rate 105%-120% of stoichiometric numbers in reaction, and then preparing the high-purity and high-density lithium tetraborate by the processes of evaporative concentration, primary drying, crushing, secondary drying, high-temperature melting, water-quenching and cooling and the like. The prepared lithium tetraborate is about 1.4g / cm<3> in crystal density, and is more suitable for the current market demand.

The invention discloses a preparation method of a subjective-objective explosive with high crystal density. The preparation method comprises the following steps: respectively preparing a fresh hydroxylamine solution and a CL-20 explosive solution, mixing the two solutions, oversaturating the solutions by using a recrystallization technique, driving cocrystallization of CL-20 with hydroxylamine, thereby obtaining the subjective-objective explosive crystal which is highly ordered in molecular accumulation, is periodically arranged and prepared through cocrystallization of CL-20 with hydroxylamine. The invention further discloses the subjective-objective explosive with high crystal density. The molecular ratio of the subjective-objective explosive with high crystal density is 2:1, the hydroxylamine is embedded into unit cell cavities of CL-20, then the crystal density of the explosive can be up to 2.0g.cm<-1> or greater, relatively good thermal stability can be achieved, and meanwhile stable preparation of the hydroxylamine is achieved. The subjective-objective explosive prepared by using the preparation method has the potential of increasing air release quantity, increasing the detonation velocity and the detonation pressure and improving comprehensive properties of explosives, and has wide application prospects in advanced weapon payloads and rocket propellants.

The invention discloses a preparation method of a hexanitrohexaazaisowurtzitane / p-benzoquinone cocrystal explosive. Firstly a saturated solution of hexanitrohexaazaisowurtzitane and a saturated solution of p-benzoquinone are prepared using a crystallization solvent, and then the solvent is allowed to evaporate through a constant-temperature incubator, followed by crystallization to prepare a hexanitrohexaazaisowurtzitane / p-benzoquinone cocrystal explosive. The invention has the benefits as follows: the crystal density of the hexanitrohexaazaisowurtzitane / p-benzoquinone cocrystal explosive is up to 1.737 g / cm3, the melting point of the cocrystal explosive is 132 DEG C and is greatly increased by 17 DEG C as compared with relatively-pure component PBQ, and the cocrystal decomposition temperature is lower than that of both CL-20 and BQ and 207 DEG C lower than that of PBQ. Therefore, by virtue of cocrystallization, the thermal decomposition behavior of the explosive can be obviously controlled, the high efficiency and desensitivity of cocrystallization of the explosive are achieved, the safety of the explosive is improved, and the explosive has a good application prospect in high-energy low-sensitivity ammunition.

The invention provides a spherical NTO (3-nitro-1,2,4-triazol-5-one) crystal with high crystalline density and a preparation method of the spherical NTO crystal. The content of NTO in the crystal is larger than or equal to 99.9%, the crystal density is larger than or equal to 1.92 g / cm<3>, the short and long axis ratio of the crystal is larger than or equal to 0.90, and the range of the median particle diameter of the crystal ranges from 150 mu m to 200 mu m. The preparation method of the spherical NTO crystal with the high crystalline density comprises steps as follows: (1), NTO and a solvent are added into a reaction kettle for complete dissolution, and the temperature of the reaction kettle is 40-80 DEG C; (2), the temperature of the reaction kettle is reduced while stirring is performed, a super-saturated solution is formed, and a crystal nucleus is generated and grows; (3), after the crystal is completely separated out, stirring is performed for 1-5 hours at the low temperature ranging from subzero 5 DEG C to zero DEG C; (4), filtering, drying and weighing are performed. The crystal grain fineness distribution is narrow, appearance observation proves that the sphericity of the crystal is high, the crystal has a smooth surface, and no crack is formed on the surface of the crystal.

The invention discloses an electrolytic copper foil additive for a flexible printed circuit board. which is characterized in that every liter of an additive solution comprises the following solute components by mass: 10-20mg of cellulose, 1-3mg of titanous sulfate, 3-7mg of sodium tungstate and 5-15mg of polypropylene glycol. The invention further discloses a preparation method and an application of the additive. By adopting the flexible printed circuit board electrolytic copper foil additive, the roughness of a rough surface of electrolytic copper foil is reduced, the crystal density of crystalline grains is improved, and the tensile strength and the peeling resistance are improved. Due to reasonable addition of the additive, the weight of the prepared copper foil in unit area can be 10<7>g / m<2>, the tensile strength at normal temperature is greater than or equal to 30kg / mm<2>, the peeling resistance can be greater than or equal to 0.8kg / cm, the elongation at normal temperature can be greater than or equal to 25%, the surface roughness Ra is less than or equal to 2.0mm, and the standard buckling is greater than 150000 times, so that the additive is far better than the conventional additive.

The invention discloses an idiosyncratic refined HMX (cyclotetramethylene tetranitramine) crystal and a preparation method thereof. The HMX content in the crystal is more than or equal to 99.9%, the crystal density is more than or equal to 1.90g / cm<3>, and the crystal short-long axis ratio is more than or equal to 0.8; the median particle diameter of the crystal is between 10 microns and 30 microns, and the particle size distribution is narrow. The preparation method comprises the steps of 1) dissolving HMX into an organic solvent in a crystallization kettle with a jacket to prepare a saturated solution; 2) controlling the water temperature in the jacket of the crystallization kettle to be 0-40 DEG C, stirring the saturated solution while dropping an anti-solvent into the saturated solution, forming a super-saturated solution, and performing crystal nucleus generation and crystal growth; 3) after the crystal is completely separated out, performing ultrasonic treatment on the crystal in mother liquor, wherein the ultrasonic treatment time is 2-4 hours, and the ultrasonic frequency is 30-50KHz. The idiosyncratic refined HMX crystal disclosed by the invention is simple in operation, less in anti-solvent dose, mild in reaction conditions, safe and reliable, and green and efficient.

The present invention relates to an explosive compacting method capable of eliminating influence of additional temperature. Said method includes the following steps: placing powder into a mould to prepare powder compacting body; placing said mould in which the powder compacting body is held under the flying sheet in explosion device, making the undersurface of said powder compacting body be connected with a metal layer, the density of said metal layer is 0-65% of said metal crystal density, under the metal layer whose described density is less than 40% of said metal crystal density a supporting plate is set; igniting explosive column in said explosion device, recovering powder ash and making the powder ash undergo the process of after-treatment.

An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 110 3 to 110 5 crystals / [mu]m 2 .

The invention discloses a foamed polypropylene bead containing a beta crystal, belonging to the field of foamed materials. The foamed polypropylene bead containing the beta crystal comprises, by weight, 100 parts of polypropylene resin, 0.2 to 5 parts of beta nucleating agent master batch, 0.5 to 2 parts of an antistatic agent and 1 to 10 parts of a foaming nucleating agent. The invention also discloses a preparation method for the foamed polypropylene bead. According to the invention, a high-pressure fluid is used as a foaming agent; autoclave foaming technology is employed; double or multiple melting peaks including alpha and beta are formed through introduction of the beta crystal into a polypropylene particle, the foamed polypropylene bead and a foamed polypropylene bead preform material; the foamed polypropylene bead with a low foaming temperature and a high expansion ratio is prepared in virtue of the characteristics of low melting point / low crystallization temperature, small crystal size and high crystal density of the beta crystal; and the foamed polypropylene bead preform material containing the beta crystal has high tensile strength, increased by 15 to 50% compared with samples of a same kind under the condition of same density.

The present invention discloses a preparation method for a hexanitrohexaazaisowurtzitane and m-dinitrobenzene co-crystallized explosive, wherein a crystallization solvent is adopted to prepare a hexanitrohexaazaisowurtzitane and m-dinitrobenzene saturated solution, and a constant temperature incubator is adopted to perform solvent evaporation and crystallization to obtain the hexanitrohexaazaisowurtzitane and m-dinitrobenzene co-crystallized explosive. According to the present invention, crystal density of the hexanitrohexaazaisowurtzitane and m-dinitrobenzene (CL-20-DNB) co-crystallized explosive is significantly increased by 19.6% compared with crystal density of DNB, detonation velocity and detonation pressure of the CL-20-DNB co-crystallized explosive are respectively increased by 46.2% and 147.5% compared to detonation velocity and detonation pressure of DNB, and the CL-20-DNB co-crystallized explosive has characteristics of a good detonation performance and high safety performance, and can be used for preparing low sensitivity ammunition.

The invention discloses a preparing method of nanometer measure twin crystal copper film in microelectronic technical domain, which comprises the following steps: preparing a high interfacial energy underlay without easy to dissolve, diffuse and react with copper; using normal physics gas phase deposited method to deposit copper film; getting the nanometer measure twin crystal in the deposited copper film; or proceeding annealing treatment at proper temperature to increase the size of copper crystal grain and improve the density of copper twin crystal density. This invention possesses merits of simple, convenient and strong practicability.

The invention discloses a physalin B crystal which belongs to a monoclinic system, wherein the space group is P2(1); the lattice parameters (i)a( / i) is equal to 12.4996 (2), (i)b( / i) is equal to 14.35620(10), (i)c( / i) is equal to 14.75190(10) and (i)beta( / i) is equal to 99.8740(10) degrees; the volume of the crystal cell is 2607.97(5)3; the crystalline density is 1.382mg / m<3>; (i)Z( / i) is equal to 4; F(000) is equal to 1152; the final departure factors (i)R1( / i) is equal to 0.0407, and (i)wR2( / i) is equal to 0.1056. The invention further discloses an extraction method of the crystal. The extraction method comprises the following steps: 1) extracting a physalis plant material to remove a solvent to obtain an extract; 2) repeatedly dissolving soluble parts of the extract by petroleum ether, standing and filtering; 3) repeatedly dissolving the extract treated by petroleum ether by ethyl acetate, standing, filtering, combining the filtrate and removing the solvent to obtain a solid; and 4) dissolving the solid, mixing a sample by silica gel, passing through a column by a dry method, carrying out gradient elution, collecting an eluant, repeatedly carrying out column chromatography, and finally, removing the solvent from the eluant. The invention further discloses an application of the physalin B crystal in preparing anti-inflammatory medicines. The crystal obtained by the invention has higher anti-inflammatory activity.

The invention provides a production method of a polycrystalline silicon ingot, comprising: laying common seed crystal at the bottom center of a crucible to form a first seed crystal layer, and laying seed crystal with high-density crystal defect at the bottom of the crucible approximate to the sidewall of the crucible to form a second seed crystal layer; placing molten silicon material on the first seed crystal layer and the second seed crystal layer, and controlling the temperature of the bottom of the crucible so that the first and second seed crystal layers are not completely melted; controlling a heat field in the crucible to from a degree of supercooling, controlling the temperature in the crucible to rise gradually in a direction upwardly perpendicular to the bottom of the crucible to form a temperature gradient so that the melted silicon material crystallizes and solidifies, and annealing and cooling to obtain polycrystalline silicon ingot after complete crystallization.The silicon crystal density and impurity content of an edge area of the silicon ingot can be effectively reduced, and overall quality of the silicon ingot can be effectively improved.The invention also provides the polycrystalline ingot prepared using the method.

A target for extreme ultraviolet light sources for emitting an extreme ultraviolet light with high luminous efficiency. The target is solid and made of a heavy metal or the heavy metal compound with a density of 0.5 to 80% of the crystal density. If the target is irradiated with a laser beam, a plasma of the heavy metal contained in the target is produced and an extreme ultraviolet light with a predetermined wavelength corresponding to the heavy metal is emitted from the plasma. Since the density of the target is smaller than the crystal density as stated above, the spatial distribution of the plasma density can be controlled, and the region in which the plasma absorbs the energy of the laser beam can be made to agree with the region in which the plasma emits extreme ultraviolet light. Therefore, the energy loss is reduced and the luminous efficiency is improved. For example, the luminous efficiency of light with a wavelength at or near 13.5 nm generated when an SnO2 target the density of which is 24% of the crystal density is used is higher than that when an Sn crystal target is used.

The invention discloses a high-density boron carbide composite material, which comprises the following components in percentage by weight: 75 percent to 88 percent of boron carbide, 6 percent to 10 percent of mixture of Al4C3 and Al3O3, 1 percent to 3 percent of phenolic resin, 2 percent to 5 percent of graphite, 1 percent to 3 percent of TiO2 and 2 percent to 6 percent of solid simple substance. The high-density boron carbide composite material is obtained by using boron carbide as the raw material and sequentially executing the steps of grinding and mixing, carrying out ball-milling, carrying out spray granulation, carrying out pressure forming and carrying out multi-section temperature-controlled sintering. According to the invention, by different raw material proportions and the operation step of sectionally sintering, the sintering work of all the raw materials and boron carbide crystals is completed step by step; the density of the product is improved; the crystal density of boron carbide reaches 99.0 percent; meanwhile, sintering time is relatively short; resources and energy of the whole engineering are saved; production cost is saved.

The invention relates to the technical field of battery material preparation, in particular to a preparation method of low-sulfur compact crystal form cobalt carbonate. The compact crystal form cobaltcarbonate prepared by the method has a relatively low specific surface area, and the specific surface area of the particles is reduced and the quantity of impurity sulfur attachment sites is reducedby improving the crystal density of the particles and reducing the quantity of micropores or mesopores in the particles, so that the tap density of the cobalt carbonate particles is improved, and thecontent of impurities can be reduced; the proper feeding molar ratio of cobalt salt to ammonium bicarbonate in the synthesis process not only provides enough carbonate ions for precipitation reaction,but also avoids the increase of hydroxide radicals in the solution and the formation of sulfate radical-containing basic carbonate due to the decomposition of excessive ammonium bicarbonate at high temperature.

The invention relates to a DAF and DNP eutectic explosive and a preparation method thereof, in particular to a 3,4-diaminofurazan (DAF) and 3,4-dinitropyrazole (DNP) eutectic explosive and a preparation method thereof, and belongs to the field of energetic materials. The DAF / DNP eutectic explosive is prepared by taking DAF and DNP as raw materials and adopting a solvent evaporation method. Compared with DAF, the prepared DAF / DNP eutectic explosive has the advantages that the melting point is greatly reduced, the DAF / DNP eutectic explosive is more suitable for being used as a fusion casting matrix explosive; the crystal density is obviously improved by 6.1%; the detonation velocity is increased by 9.7%, and a good detonation performance is shown. The preparation conditions are mild, and theprocess is simple and easy to operate. The eutectic explosive is a novel high-energy low-sensitivity fusion casting matrix explosive and has a good application prospect.

The invention discloses a method for quickly measuring the continuous distribution of crystal density of an energetic material. Crystal samples are naturally settled down and stabilized at different positions of a density gradient tube according to a density difference by using the density gradient tube, and the liquid densities of the crystal samples at different heights are calibrated and corrected through standard density floaters; then a light source generator and a light source detector which are mounted on two sides of the density gradient tube perform synchronous up-and-down scanning and data acquisition; a relation curve between the light transmittance and the height is calculated according to the light intensity differences of different heights and different regions, so that a continuous density distribution curve of the crystal samples is accurately calculated. Therefore, the density distribution situations of different crystal samples are judged. The method disclosed by the invention is used for quickly measuring the continuous distribution of the crystal density of the similar energetic materials, and the quantity of the samples under all density gradients is quantitatively expressed; the quantitative test on the density distribution of crystal particles is realized.

The invention discloses a high-light-transmittance photovoltaic packaging material adopting a nucleating antireflection agent. The photovoltaic packaging material is prepared by performing the steps of premixing, melt extrusion, casting film formation, cooling, slitting, winding and the like on photovoltaic packaging material matrix resin, graft modified matrix resin, the nucleating antireflectionagent and other auxiliary agents; by adding the nucleating antireflection agent with quantum dot nanoparticles into a packaging material system, on the one hand, the crystallization behavior of crystallizable polymer chain segments in resin structures is changed, the crystallization rate is accelerated, the crystal density is increased, the micronization of grain size is promoted, and the grain size is smaller than the visible wavelength, thereby improving the transmittance of the photovoltaic packaging material; on the other hand, the quantum dot nanoparticles have the function of convertingshort waves into long waves, can realize the conversion of high-energy photons into a large number of low-energy photons, and have the effect of photon multiplication, so that the intensity of lightincident on a battery piece is increased, the utilization of sunlight by components is enhanced, and the photoelectric conversion efficiency of components is optimized and improved.

The invention discloses a mucilage glue sheet for tire bonding. The mucilage glue sheet comprises cycloaliphatic epoxide resin, ethylene propylene diene monomer, trans-1,4-polyisoprene, a nucleating agent, white carbon black, vinyl acetate, accelerant, a softener and antioxygen. As an epoxy group of the cycloaliphatic epoxide resin is directly connected onto an alicyclic ring, a compact rigid molecular structure can be formed, and the crosslinking density is increased after the cycloaliphatic epoxide resin is solidified; therefore the heat stability of glue can be enhanced by adding the cycloaliphatic epoxide resin to the formula of the mucilage glue sheet; by adding the nucleating agent to the formula, the crystallization rate of the ethylene propylene diene monomer can be quickened, the crystal density of the ethylene propylene diene monomer can be increased and grain size micronization is promoted, and with the addition of the nucleating agent, the yield strength and the tensile strength of the trans-1,4-polyisoprene are increased, so by refining the modified ethylene propylene diene monomer and the trans-1,4-polyisoprene with other components, the tensile strength, the stress at definite elongation and the elongation at break of the mucilage glue sheet are increased.

Increase of an address voltage change amount of a PDP is suppressed. X and Y electrodes which are a display electrode pair arranged on a plate; a dielectric layer covering the X and Y electrodes; and a protective layer covering the dielectric layer are provided. The protective layer includes an MgO film deposited on a surface of the dielectric layer and a plurality of MgO crystalline particles attached on the MgO film. Also, by using (110) orientation as a crystal orientation of the MgO film, a crystal density of the MgO film can be increased, so that an increase of the address voltage change amount can be suppressed.

Methods for manufacturing a heat sink having a central cavity, a taper core, a plurality of fins and a base plate integrally formed with the taper core and the fins are provided. The first proposed method includes the steps of: (a) making a die having a relatively high surface hardness, a specific inner hardness, a specific surface friction and a specific toughness so as to stand a relatively high pressure and achieve a relatively high aspect ratio of the heat sink; (b) putting a material into the die; (c) pressing the material with the relatively high pressure to form the heat sink integrally such that the heat sink would have a relatively high material crystal density; and (d) removing the heat sink from the die.

The invention discloses a method for preparing special 3-nitro-1,2,4-triazole-5-ketone. The method comprises the following steps: providing a 3-nitro-1,2,4-triazole-5-ketone solution; and cooling the 3-nitro-1,2,4-triazole-5-ketone solution with a cooling medium and crystallizing to obtain the special 3-nitro-1,2,4-triazole-5-ketone. According to the provided method, a recrystallization technology is employed for increasing crystal density of a single-compound explosive, reducing internal defect of the crystal, and eliminating surface defects, so that the surface is smooth and dense, crystal shape and granularity can be controlled, quality of the single-compound explosive is enhanced, and moulding performance can be satisfied.

The invention provides an environment-friendly, efficient and low-cost method for separating lanthanide series elements. The method comprises the following steps that crystals are generated by the lanthanide series elements and boric acid through a fusing hot method, and the crystals of the same structure are separated from crystal lotion or separation is achieved according to drifting in solvent due to the different densities of the crystals of the different structures. The separating method makes selective polymerization for different kinds of lanthanide series metal on the basis of the flexible ligand boric acid, the lanthanide series components are synthesized under the uniform reaction condition for the first time, the lanthanide series elements are divided into six different components, the crystal density is closely related to the crystal structure, the high separation ratio in the binary lanthanide series elements can be achieved, compared with traditional sub-step crystallization, multiple times of separation caused by the low separation ratio is avoided, and generation of a large amount of effluent is avoided.