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High-light-transmittance photovoltaic packaging material adopting nucleating antireflection agent

A technology of packaging materials and high light transmittance, which is applied in photovoltaic power generation, adhesives, adhesive additives, etc., can solve the long-term impact of EVA film on UV resistance and mechanical properties, and the high price of graphene oxide nanometers, which affects the long-term reliability of components In order to improve the efficiency of photoelectric conversion, shorten the molding cycle and increase the strength

Active Publication Date: 2019-01-08
HANGZHOU FIRST APPLIED MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Patent application 101353558A does not use ultraviolet light absorbers, and improves light transmittance by increasing light absorption, but because the material does not contain ultraviolet light absorbers, the long-term ultraviolet resistance and mechanical properties of EVA film may be affected
Patent application CN102656705A uses organic fluorescent dyes to dope packaging materials through wavelength conversion to improve its light transmittance, but its absorption band is narrow, and there is obvious self-absorption loss, and yellowing and light transmittance decline will occur after long-term use
Patent application CN107502232A adds a composite plasticizer composed of spiropyran and phthalates to EVA resin to improve its light transmittance, but this plasticizer is easy to migrate in a high-temperature and high-humidity environment, which affects the long-term durability of the component Reliability, the graphene oxide nanometers added to the system are expensive
At present, there is no patent report on improving the light transmittance of packaging materials by adding nucleating antireflection agents with nanoparticles with quantum effects.

Method used

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  • High-light-transmittance photovoltaic packaging material adopting nucleating antireflection agent
  • High-light-transmittance photovoltaic packaging material adopting nucleating antireflection agent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] This embodiment provides a photovoltaic encapsulation material with high light transmittance.

[0024] In this example, by mass fraction, the VA mass content of 100 mass parts is the ethylene-vinyl acetate copolymer of 28%, adds the cadmium sulfide of 0.5 mass part, the tert-butyl peroxyisopropyl carbonate of 1 mass part, 5 parts by mass of trimethylolpropane triacrylate, 1 part by mass of KH550, 0.1 part by mass of 2-hydroxy-4-n-octyloxybenzophenone, 0.1 part by mass of bis-2,2,6 sebacic acid ,6-tetramethylpiperidinol ester. Mix evenly, and the above mixture is pre-mixed, melt-extruded, cast into a film, cooled, slitting and winding to obtain the photovoltaic packaging material, which is designated as E-1.

Embodiment 2

[0026] This embodiment provides a photovoltaic encapsulation material with high light transmittance.

[0027] In this example, in terms of mass fraction, 90 parts by mass of ethylene-vinyl acetate copolymer with a mass content of VA of 26% is added, and 10 parts by mass of the above-mentioned ethylene-vinyl acetate copolymer (with a mass content of VA of 26%) and Cadmium selenide blended and granulated masterbatch at 5 wt%, 1 mass part of tert-butyl peroxyisopropyl carbonate, 5 mass parts of trimethylolpropane triacrylate, 2 mass parts of KH550, 0.4 mass parts 2-Hydroxy-4-n-octyloxybenzophenone, 1 part by mass of bis-2,2,6,6-tetramethylpiperidinol sebacate. Mix evenly, and the above mixture is pre-mixed, melt-extruded, cast into a film, cooled, slitting and winding to obtain the photovoltaic packaging material, which is designated as E-2.

Embodiment 3

[0029] This embodiment provides a photovoltaic encapsulation material with high light transmittance.

[0030]In this example, in terms of mass fractions, 90 parts by mass of ethylene-vinyl acetate copolymer with a mass content of VA of 20%, 10 parts by mass of ethylene-vinyl acetate copolymer with a mass content of 20% are grafted with methyl Acrylic anhydride (graft rate 10%), adding 5 mass parts of zinc sulfide, 1.5 mass parts of tert-butyl peroxide 3,3,5-trimethylhexanoate, 10 mass parts of pentaerythritol triacrylate, 3 mass parts 0.2 parts by mass of KH550, 0.2 parts by mass of 2-hydroxy-4-n-octyloxybenzophenone, and 0.5 parts by mass of bis-2,2,6,6-tetramethylpiperidinol sebacate. Mix evenly, and the above mixture is pre-mixed, melt-extruded, cast into a film, cooled, slitting and winding to obtain the photovoltaic packaging material, which is marked as E-3.

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Abstract

The invention discloses a high-light-transmittance photovoltaic packaging material adopting a nucleating antireflection agent. The photovoltaic packaging material is prepared by performing the steps of premixing, melt extrusion, casting film formation, cooling, slitting, winding and the like on photovoltaic packaging material matrix resin, graft modified matrix resin, the nucleating antireflectionagent and other auxiliary agents; by adding the nucleating antireflection agent with quantum dot nanoparticles into a packaging material system, on the one hand, the crystallization behavior of crystallizable polymer chain segments in resin structures is changed, the crystallization rate is accelerated, the crystal density is increased, the micronization of grain size is promoted, and the grain size is smaller than the visible wavelength, thereby improving the transmittance of the photovoltaic packaging material; on the other hand, the quantum dot nanoparticles have the function of convertingshort waves into long waves, can realize the conversion of high-energy photons into a large number of low-energy photons, and have the effect of photon multiplication, so that the intensity of lightincident on a battery piece is increased, the utilization of sunlight by components is enhanced, and the photoelectric conversion efficiency of components is optimized and improved.

Description

technical field [0001] The invention belongs to the field of packaging materials for photovoltaic modules, in particular to a photovoltaic packaging material with high light transmittance. Background technique [0002] Sunlight is a continuous spectrum, and its distribution range is mainly from ultraviolet light of a few tenths of a micron to infrared light of a few microns. The energy gap of silicon is 1.12eV. Crystalline silicon solar cells mainly absorb light around 400-1100nm, and have very low quantum efficiency for light below 400nm (purple light and ultraviolet light), thus causing loss of solar light energy below 400nm. Quantum dot nanoparticles have good photostability, absorption bandwidth, can absorb light lower than the wavelength of the semiconductor material absorption spectrum, and then generate light with the same wavelength as the semiconductor material absorption spectrum, and the emitted light is absorbed by the semiconductor material, increasing the The ...

Claims

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Application Information

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IPC IPC(8): C09J7/10C09J7/30C09J4/02C09J4/06C09J11/04H01L31/048
CPCC09J4/06C09J11/04C09J7/10C09J7/30H01L31/0481Y02E10/50
Inventor 魏梦娟周光大侯宏兵桑燕
Owner HANGZHOU FIRST APPLIED MATERIAL CO LTD
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