III nitride compound semiconductor laminated structure

A stacked structure and nitride technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, coatings, etc., can solve problems such as unrecorded formation, and achieve the effect of improving production efficiency
CN101438429AActive Publication Date: 2009-05-20TOYODA GOSEI CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TOYODA GOSEI CO LTD
Publication Date
2009-05-20

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Abstract

An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 110 3 to 110 5 crystals / [mu]m 2 .
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Description

technical field

[0001] The present invention relates to Group III nitride compound semiconductors having good crystallinity used in the manufacture of light-emitting diodes (LEDs), laser diodes (LDs), and electronic devices (hereinafter, Group III nitride compound semiconductors are defined as compound semiconductors represented by AlGaInN ) laminated structure and its manufacturing method. In particular, it relates to a Group III nitride compound semiconductor multilayer structure and a method for producing the same, which are suitably used for epitaxially growing a Group III nitride compound semiconductor crystal with good crystallinity on a sapphire substrate. Background technique

[0002] Group III nitride compound semiconductors are commercialized as LEDs and LDs because they have a band gap of the energy direct transfer type corresponding to the visible light to ultraviolet light region, and can emit light with high efficiency. In addition, as an electronic device, it...

Claims

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