Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of preparing nanometer scale twin crystal copper thin film

A nano-scale, copper thin film technology, applied in the field of microelectronics, can solve the problems of not being able to simultaneously improve the electrical conductivity and mechanical strength of copper, and reducing the electrical conductivity of copper by conducting electrons

Inactive Publication Date: 2007-08-15
FUDAN UNIV
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods based on the artificial introduction of defects will reduce the conductivity of copper due to the increase in the scattering of conductive electrons, so conventional methods generally cannot improve the conductivity and mechanical strength of copper at the same time.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of preparing nanometer scale twin crystal copper thin film
  • Method of preparing nanometer scale twin crystal copper thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] 1: Select silicon (Si) as the substrate, after standard RCA cleaning and hydrofluoric acid (HF) solution of a certain concentration (generally 2%) to remove the intrinsic oxide layer, then install it into the physical vapor deposition (PVD) For the equipment cavity, the lower the background vacuum, the better. The vacuum degree given in this example is 2×10 -5 Pa. A layer of tungsten carbide (WC) film is deposited on it by magnetron co-sputtering method. The thickness of the WC film is not limited, and in terms of process simplicity, the thickness of the film used in this example is 10 nanometers. Ar gas was introduced during deposition, and the working pressure was 5×10 -1 Pa.

[0013] 2: Continue to deposit a layer of 100nm copper film by magnetron sputtering under the condition of not breaking the vacuum, and the working pressure during deposition is 5×10 -1 Pa. The sample structure of Cu(100nm) / WC(10nm) / Si is obtained, and the newly deposited copper film has a ...

Embodiment 2

[0017] 1: Choose silicon (Si) as the substrate, after standard RCA cleaning and 2% concentration of hydrofluoric acid (HF) solution to remove the intrinsic oxide layer, put it into the chamber of physical vapor deposition (PVD) equipment, this The lower the bottom vacuum the better, the vacuum degree given in this example is 2×10 -5 Pa. A layer of tungsten carbonitride (WCN) film with a thickness of 10nm-100nm is deposited on it by magnetron co-sputtering method. The sputtering atmosphere is a mixed gas of nitrogen and argon, the partial pressure ratio of nitrogen and argon is 1:4, the deposition rate ratio of carbon target and tungsten target is 3:7, and the working pressure during deposition is 5×10 -1 Pa.

[0018] 2: Continue to deposit a layer of 100nm copper film by magnetron sputtering under the condition of not breaking the vacuum, and the working pressure during deposition is 5×10 -1 Pascal. The sample structure of Cu(100nm) / WCN(10nm) / Si was obtained. The sample w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparing method of nanometer measure twin crystal copper film in microelectronic technical domain, which comprises the following steps: preparing a high interfacial energy underlay without easy to dissolve, diffuse and react with copper; using normal physics gas phase deposited method to deposit copper film; getting the nanometer measure twin crystal in the deposited copper film; or proceeding annealing treatment at proper temperature to increase the size of copper crystal grain and improve the density of copper twin crystal density. This invention possesses merits of simple, convenient and strong practicability.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a method for preparing a nanoscale twinned copper thin film. Background technique [0002] An ideal conductive material needs to have both high electrical conductivity and high mechanical strength. However, polycrystalline copper, which is widely used in the interconnection process of integrated circuits, has poor mechanical strength. The strength of a solid depends on its ability to resist elastic deformation, and the elastic deformation of polycrystalline copper is usually due to the movement of dislocations within each grain. The movement of dislocations can be prevented by artificially introducing various defects (including grain boundaries, point defects, etc.), thereby improving the mechanical strength of copper, including strengthening of solid solution alloys (metal doping), cold working, and grain refinement. means. However, these methods based on the artific...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/06C23C14/18C23C14/58C22F1/08
Inventor 谢琦蒋玉龙屈新萍茹国平李炳宗
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com