Method for screening and matching insulating and heat-insulating material and nano-crystalline metal material in nano current channel layer

Abstract

The invention discloses a method for screening and matching an insulating and heat-insulating material and a nano-crystalline metal material in a nano current channel layer. The method comprises the following steps: determining the insulating and heat-insulating material according to a material selection principle; establishing a crystal model according to the insulating material, heating the crystal model to melt the crystal model, cooling the crystal model to a preset first temperature, and operating the crystal model for a preset first time to obtain an amorphous model; calculating the formation energy, mean square displacement and radial distribution function of selected nano current channel material atoms in the model according to the amorphous model; and screening a material suitable for growing and gathering in the insulating and heat-insulating material according to the formation energy, the mean square displacement and the radial distribution function. The nano current channel layer prepared from the material screened by the method is an insulating layer containing metal nano crystal grains penetrating through the film thickness of the nano current channel layer, and the current only flows between the electrode layer and the phase change layer through a nano current channel formed by the metal nano crystal grains; and the power consumption of the phase-change memory can be obviously reduced.

Description

technical field [0001] The invention belongs to the technical field of phase change storage, and more particularly relates to a method for screening and matching an insulating and heat insulating material and a nanometer grain metal material in a nanometer current channel layer. Background technique [0002] With the advent of the information age, memory occupies an increasingly important position in life. At present, the research of memory has been developing in the direction of high speed, low power consumption and high stability. Among them, the phase-change memory (PCRAM) fabricated by utilizing the phase-change properties of materials has great potential in the semiconductor market. [0003] The basic principle of phase change memory is that phase change materials can be reversibly converted between crystalline and amorphous states, and use the huge difference in resistance between different states of the material to achieve "1" and "0" data storage. The commonly used ...

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Problems solved by technology

Among them, the most direct way to change the device structure is to reduce the amount of phase-change materials while increasing the current density by reducing the size of the device, such as the restricted phase-change memory cell structure, etc., but this method requires a higher process and process cost high, difficult

Other methods to change the structure of the device, such as edge contact type, asymmetric structure, ring electrode structure, adding a two-dimensional material thermal resistance layer, etc., are all done by minimizing the phase transition without improving the process. The amount of material or the heat dissipation of the device can be reduced to reduce the write power consumption of the phase change unit, but these methods require major changes in the device structure and process, and there are problems of high process cost and difficulty

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