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High-performance PbTe-based N-type thermoelectric material and preparation method thereof

A thermoelectric material and high-performance technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., can solve the problems of restricting the performance of PbTe-based thermoelectric devices, difficult thermoelectric performance, and simple energy band structure, etc. Achieve the effect of improving energy conversion efficiency, optimizing electrical and thermal properties, and improving electrical properties

Pending Publication Date: 2020-05-26
TONGJI UNIV
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  • Claims
  • Application Information

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Problems solved by technology

However, compared with P-type PbTe materials, the thermoelectric properties of N-type PbTe materials are poor, and there are few studies
At present, the zT peak of most N-type PbTe thermoelectric material systems is only about 1.4, and this performance mismatch severely restricts the performance of PbTe-based thermoelectric devices.
Due to the simple energy band structure of N-type thermoelectric materials, it is difficult to improve the thermoelectric performance through energy band regulation.

Method used

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  • High-performance PbTe-based N-type thermoelectric material and preparation method thereof
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  • High-performance PbTe-based N-type thermoelectric material and preparation method thereof

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preparation example Construction

[0039] The second technical solution of the present invention proposes a method for preparing a high-performance PbTe-based N-type thermoelectric material, comprising the following steps:

[0040] (1) Vacuum packaging: according to Cu x PbTe 0.75 Se 0.25 (0<x≤0.75%) stoichiometric ratio, respectively weigh the elemental elements Pb, Te, Se, Cu as raw materials, and put each elemental element into the quartz tube in order of melting point from large to small, and vacuumize encapsulation;

[0041] (2) Melt quenching: heating the two quartz tubes equipped with simple raw materials respectively, carrying out melting reaction, quenching, and obtaining the first ingot;

[0042] (3) Annealing and quenching: the quartz tube equipped with the first ingot is heated up again, annealed at high temperature, and quenched to obtain the second ingot;

[0043] (4) Vacuum hot-press sintering: Grinding the second ingot into powder, placing it in a graphite mold, vacuum hot-press sintering, a...

Embodiment 1

[0053] High-performance lead telluride (PbTe)-based N-type thermoelectric material with the chemical formula Cu x PbTe 0.75 Se 0.25 (x≦0.75%), take x=0.1%, 0.2%, 0.3%, 0.35%, 0.4%, 0.45%, 0.5%, 0.75%, and prepare Cu with different doping concentrations x PbTe 0.75 Se 0.25 Block material:

[0054] (1) According to Cu x PbTe 0.75 Se 0.25 The stoichiometric ratio is obtained by taking elemental raw materials lead Pb, tellurium Te, selenium Se, and copper Cu with a purity greater than 99.9%, respectively, and putting them into a quartz tube, vacuumizing and packaging;

[0055] (2) Place the vacuum-encapsulated quartz tube in a high-temperature well-type furnace, raise the temperature from room temperature to 1050° C. at a rate of 100° C. / h, keep it for 4 hours, and then quench it to obtain the first ingot.

[0056] (3) Perform high-temperature annealing heat treatment on the first ingot obtained in step (2), place the quartz tube with the first ingot in the pit furnace aga...

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Abstract

The invention relates to a high-performance PbTe-based N-type thermoelectric material and preparation thereof. The chemical formula of the thermoelectric material is CuxPbTe0.75Se0.25, wherein x is greater than 0 and less than or equal to 0.75%. Compared with the prior art, by using heterovalent interstitial copper atom doping, electrons can be released at interstitial positions after copper atomsenter crystal lattices, and the carrier concentration is adjusted, so that the material shows the properties of an N-type semiconductor. Due to the fact that the added interstitial copper atoms havethe solubility which is continuously increased along with the temperature in a PbTe0.75Se0.25 material system, the carrier concentration which is increased along with the temperature rise can be obtained in the temperature rise process, dynamic optimization of the carrier concentration is achieved, and the electrical transport performance of the material is enhanced. Besides, high-density intragranular dislocations can be introduced into the material due to aggregation of the interstitial copper atoms, and remarkable lattice strain can be introduced into the material due to the dislocation defects, so that the lattice thermal conductivity of the material is greatly reduced, and the thermal performance of the material is greatly optimized.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and relates to a high-performance PbTe-based N-type thermoelectric material and a preparation method thereof. Background technique [0002] With the depletion of fossil energy (petroleum, coal, natural gas, etc.), it has become a research hotspot all over the world to find new and environmentally friendly renewable energy to maintain the sustainable development of human beings. In recent years, due to the advantages of directly converting temperature difference into potential difference without any mechanical vibration, no emission and noise, the thermoelectric conversion characteristics of thermoelectric materials have attracted more and more researchers' attention. Thermoelectric material is a new type of functional material that can realize mutual conversion between thermal energy and electrical energy through the transport of carriers in solids. The direct conversion of therm...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 裴艳中李文肖猷魏吴怡萱
Owner TONGJI UNIV
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