High-performance N type argyrodite thermoelectric material and preparation method thereof

A technology of thermoelectric materials and sulfur-argentine ore, which is applied in the direction of thermoelectric device node lead-out materials, chemical instruments and methods, and elemental compounds other than selenium/tellurium, can solve the practical application of limited liquid thermoelectric materials, N Solve the problems such as the slow development of type materials, and achieve the effect of low thermal conductivity, excellent ZT value, and good application prospects

Inactive Publication Date: 2017-10-10
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, such materials are mainly copper-based materials, which are P-type semiconductors. Since the preparation of thermoelectric devices requires P-type and N-type materials with matching thermoelectric properties and mechanical properties, although P-type liquid copper-based materials A high ZT value has been obtained, but due to the slow development of the corresponding N-type materials, the practical application of liquid-like thermoelectric materials is greatly limited.

Method used

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  • High-performance N type argyrodite thermoelectric material and preparation method thereof
  • High-performance N type argyrodite thermoelectric material and preparation method thereof
  • High-performance N type argyrodite thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Example 1: Ag 9 GaSe 6 Polycrystalline bulk of semiconductor material

[0055] The elemental raw materials Ag, Ga and Se were weighed according to the molar ratio of 9:1:6, and then packaged in a quartz tube. The temperature was raised to 800°C at a heating rate of 4°C / min, then to 1100°C at a rate of 2°C / min, melted at this temperature for 12 hours, and then quenched in a mixture of ice and water. Put the quenched quartz tube into a tube furnace for annealing at 550°C for 120 hours, then cool to room temperature with the furnace;

[0056] The product obtained after annealing was ground into powder, and subjected to spark plasma sintering at a sintering temperature of 560° C., a pressure of 40 MPa, and a sintering time of 10 minutes to obtain a dense bulk material.

[0057] Such as Figures 2A-2D As shown, the obtained Ag 9 GaSe 6 The thermoelectric performance measurement of the polycrystalline block shows that in the measured temperature range (300-800K), the ma...

Embodiment 2

[0058] Example 2: Ag 9 GaSe 5.98 Polycrystalline bulk of semiconductor material

[0059] The elemental raw materials Ag, Ga and Se were weighed according to the molar ratio of 9:1:5.98, and then packaged in a quartz tube. The temperature was raised to 800°C at a heating rate of 4°C / min, then to 1100°C at a rate of 2°C / min, melted at this temperature for 12 hours, and then quenched in a mixture of ice and water. Put the quenched quartz tube into a tube furnace for annealing at 550°C for 120 hours, then cool to room temperature with the furnace;

[0060] The product obtained after annealing was ground into powder, and subjected to spark plasma sintering at a sintering temperature of 560° C., a pressure of 40 MPa, and a sintering time of 10 minutes to finally obtain a dense bulk material.

[0061] Such as Figure 3A-3D As shown, the obtained Ag 9 GaSe 5.98 The thermoelectric performance measurement of the polycrystalline block shows that in the measured temperature range (3...

Embodiment 3

[0062] Example 3: Ag 9 GaSe 5.97 Polycrystalline bulk of semiconductor material

[0063] The elemental raw materials Ag, Ga and Se were weighed according to the molar ratio of 9:1:5.97, and then packaged in a quartz tube. The temperature was raised to 800°C at a heating rate of 4°C / min, then to 1100°C at a rate of 2°C / min, melted at this temperature for 12 hours, and then quenched in a mixture of ice and water. Put the quenched quartz tube into a tube furnace for annealing at 550°C for 120 hours, then cool to room temperature with the furnace;

[0064]The product obtained after annealing was ground into powder, and subjected to spark plasma sintering at a sintering temperature of 560° C., a pressure of 40 MPa, and a sintering time of 10 minutes to obtain a dense bulk material.

[0065] Such as Figures 4A-4D As shown, the obtained Ag 9 GaSe 5.97 The thermoelectric performance measurement of the polycrystalline block shows that in the measured temperature range (300-800K)...

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Abstract

The invention relates to a high-performance N type argyrodite thermoelectric material and a preparation method thereof. The chemical composition of the argyrodite thermoelectric material is Ag9GaSe(6-x-y)Tey, wherein x is larger than or equal to 0 and smaller than or equal to 0.03, y is larger than or equal to 0 and smaller than or equal to 0.75, and x and y are not equal to 0 at the same time. The provided semiconductor material has very low thermal conductivity ranging from 0.25 Wm<-1>K<-1> to 0.65 Wm<-1>K<-1>. The electric conductivity of the semiconductor material can be regulated in a very wide range and can range from 10,000 Sm<-1> to 60,000 Sm<-1>.

Description

technical field [0001] The invention relates to a high-performance N-type sulfur-silver-germanium ore thermoelectric material and a preparation method thereof, belonging to the field of thermoelectric materials. Background technique [0002] With the development of the world economy, the human demand for energy is increasing day by day, and the existing energy reserves are no longer sufficient to support the long-term development of human beings. Therefore, a large number of researches have begun to focus on the development of new energy sources and the improvement of energy utilization efficiency. In this context, thermoelectric materials have attracted extensive attention of researchers in recent decades because they can realize the mutual conversion between electrical energy and thermal energy. [0003] The use of thermoelectric materials is based on two effects: the Seebeck effect and the Peltier effect. The Seebeck effect means that if there is a temperature difference...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C04B35/547C04B35/64H01L35/16
CPCC01B19/002C04B35/547C04B35/64C04B2235/658C04B2235/6567C04B2235/666C04B2235/9607C04B2235/408C04B2235/40H10N10/852
Inventor 史迅陈立东江彬彬仇鹏飞陈弘毅张骐昊任都迪
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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