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Novel compound semiconductor and usage for same

A semiconductor and compound technology, applied in the field of new compound semiconductor materials, to achieve good thermoelectric conversion performance, improve thermal conductivity, and increase the effect of ZT value

Active Publication Date: 2014-02-05
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, many conventional compound semiconductors cannot satisfy all these conditions simultaneously

Method used

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  • Novel compound semiconductor and usage for same

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Experimental program
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Effect test

Embodiment

[0071] Prepare 0.0497g In, 0.0113g Zn, 0.3522g Co, 0.0713g Rh, 2.2149g Sb, 0.1028g Sn, 0.1768g Te and 0.0209g Co 3 o 4 As a reagent, and use a mortar and mortar for mixing. The material mixed as above was put into a quartz tube and vacuum-sealed, then heated at 650 °C for 36 hours. The time taken to raise the temperature to 650°C was 1 hour and 30 minutes, and In 0.25 Zn 0.1 co 3.6 Rh 0.4 Sb 10.5 sn 0.5 o 0.2 Te 0.8 powder.

[0072] A part of the composite material prepared above was formed into a disc having a diameter of 10 mm and a thickness of 1 mm. Thereafter, a pressure of 200 MPa was applied to the disk using CIP (cold isostatic pressing). Next, the resulting product was put into a quartz tube and vacuum sintered for 12 hours. For the sintered discs, thermal conductivity was measured at pre-set temperature intervals using an LFA457 (Netzsch, Inc). The measurement results are shown as examples in figure 1 middle.

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Abstract

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-z-pXnQ'pTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q' is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0@m@1; 0@n@7; 0<z@2 and 0<p@2.

Description

technical field [0001] The present disclosure relates to a novel compound semiconductor material that can be used in solar cells or as a thermoelectric material, as well as the preparation method and use of the material. [0002] This application claims Korean Patent Application No. 10-2011-0045348 filed on May 13, 2011 in Korea, Korean Patent Application No. 10-2011-0045349 filed on May 13, 2011, filed in May 2011 Priority of Korean Patent Application No. 10-2011-0049609 filed on May 25 and Korean Patent Application No. 10-2012-0050261 filed on May 11, 2012, the entire contents of which are incorporated herein by reference middle. Background technique [0003] A compound semiconductor is not a single element such as silicon and germanium, but a compound containing two or more composite elements serving as semiconductors. Various compound semiconductors have been developed and used in many fields. For example, compound semiconductors can be used in thermoelectric conversi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C01G15/00C01G51/00C01G30/00H01L31/032
CPCC01B19/002C01P2006/32C01G55/002C01P2002/88H01L35/18C01P2004/20C01P2006/40C01G51/006H01L31/032C01G53/006C01P2002/50H10N10/853C01B19/00C01G15/00C01G51/00C01G30/00
Inventor 朴哲凞金兑训
Owner LG CHEM LTD
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