Novel compound semiconductor and usage for same
A compound and semiconductor technology is applied in the field of new compound semiconductor materials to achieve good thermoelectric conversion performance and increase the ZT value.
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[0059] Prepare 0.0510g In, 0.3873g Co, 2.2923g Sb, 0.0428g Co 3 o 4 and 127.6 g Te as a reagent and mixed using a mortar. The material mixed as above was put into a quartz tube and vacuum-sealed, then heated at 650 °C for 36 hours. The time taken to raise the temperature to 650°C was 1 hour and 30 minutes, and In 0.25 co 4 Sb 10.6 o 0.4 Te powder.
[0060] Part of the composite material produced above was formed into a disk having a diameter of 10 mm and a thickness of 1 mm. Thereafter, a pressure of 200 MPa was applied to the disk using CIP (cold isostatic pressing). Next, the resulting product was put into a quartz tube and vacuum sintered for 12 hours. For the sintered discs, thermal conductivity was measured at pre-set temperature intervals using an LFA457 (Netzsch, Inc). The measurement results are shown as examples in figure 1 middle.
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