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14results about "Group 2/12 element organic compounds" patented technology

Organometallic compounds for depositing high-purity tin oxide, as well as dry etching and deposition reactors for tin oxide films.

PendingJP2026071243ATin organic compoundsGroup 2/12 element organic compoundsArylPhysical chemistry
Provided are an organometallic compound useful for deposition of high purity tin oxide, and a composition containing the compound. 【Solution means】Formula II: Sn(NR 2 (CH2) n A 2 )2 (wherein A 2 is NR 2’ or O; R 2 group is H and an alkyl group and an aryl group having 1 to 10 carbon atoms; R 2’ group is H and an alkyl group or an acyl group and an aryl group having 1 to 10 carbon atoms; n is 2 or 3; optionally, NR 2 (CH2) n NR 2’ forms a cyclic structure) of an organometallic compound is provided.
Owner:シースターケミカルズユーエルシー

Metal complex, semiconductor layer comprising a metal complex and organic electronic device

PCT designated stageWO2026124799A1Group 2/12 element organic compoundsGroup 7/17 element organic compounds
Owner:NOVALED GMBH

Organometallic compounds for depositing high-purity tin oxide, as well as dry etching and deposition reactors for tin oxide films.

ActiveJP7842823B2Tin organic compoundsGroup 2/12 element organic compoundsPhysical chemistryDry etching
To provide a method for removing a tin oxide deposit from an inner surface of a reactor chamber or from a substrate in the reactor chamber.SOLUTION: A method includes the step of introducing an etchant gas into a reactor chamber containing a tin oxide deposit. The etchant gas is a compound of a general formula A3OmXn. (In the formula, A3 is selected from a group consisting of C, N, and S. O is oxygen. Each X is independently selected from a group consisting of halogens. Subscripts m and n are greater than zero.) The method also includes the steps of: either before or after introduction, activating the etchant gas; allowing an etching reaction to proceed between the activated etchant gas and the tin oxide deposit; and evacuating the etchant gas together with gaseous products of the etching reaction.SELECTED DRAWING: None
Owner:シースターケミカルズユーエルシー

Process for producing barium titanyl oxalate and process for producing barium titanate

ActiveCN116507588Bsmall particle sizepromote crystallizationAlkaline earth titanatesTitanium organic compoundsOxalateOXALIC ACID DIHYDRATE
A method for producing barium titanyl oxalate, characterized by a method for producing barium titanyl oxalate by mixing a solution (A liquid) containing oxalic acid and a solution (B liquid) containing a titanium source and a barium source, allowing them to react, and thereby producing barium titanyl oxalate, wherein the A liquid and the B liquid are supplied to one end side of a reaction liquid flow path, respectively, the A liquid and the B liquid are mixed within the reaction flow path, and the reaction liquid is discharged from the other end side of the reaction liquid flow path, after which solid-liquid separation of the reaction liquid is performed; the residence time of the reaction liquid within the reaction liquid flow path is within 30 seconds; or the A liquid and the B liquid are supplied to one end side of a reaction liquid flow path, respectively, the A liquid and the B liquid are mixed at one end side of the reaction liquid flow path, the reaction liquid is allowed to generate a vortex while moving toward the other end side of the reaction liquid flow path, and the reaction liquid is discharged from the other end side of the reaction liquid flow path, after which solid-liquid separation of the reaction liquid is performed.
Owner:NIPPON CHEMICAL IND CO LTD

Organometallic compounds for the deposition of high purity tin oxide and dry etching of the tin oxide films and deposition reactors

ActiveUS12655164B2Tin organic compoundsGroup 2/12 element organic compounds
Specific organometallic compounds of Formula I: Qx-Sn-(A1R1′z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and / or a process for dry etching a substrate using a particular etchant gas with a specific additive.
Owner:SEASTAR CHEM ULC

Strontium compound, method of manufacturing thin film containing strontium and semiconductor device using the same

PendingUS20260159530A1Group 2/12 element organic compoundsChemical vapor deposition coating
A strontium compound, a method of making a thin film with the strontium compound, and a method of manufacturing a semiconductor device including the thin film.The strontium compound is represented by Chemical Formula 1:In Chemical Formula 1, n, L1, L2, A, and m are as defined herein.
Owner:SAMSUNG ELECTRONICS CO LTD

Compound, thin film-forming material, and method for producing thin film

Provided is a compound represented by the following general formula (1) or (2): where R1 to R4 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M1 represents a gallium atom or an indium atom; where R7 to R10 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R11 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and M2 represents a gallium atom or an indium atom.
Owner:ADEKA CORP

Strontium compound, method for forming oxide film, method for manufacturing semiconductor device, and semiconductor device

PendingCN122167454AGroup 2/12 element organic compoundsChemical vapor deposition coatingDevice materialPhysical chemistry
Disclosed are a strontium compound, a method of forming an oxide thin film, a method of manufacturing a semiconductor device, and a semiconductor device. The strontium compound is represented by Chemical Formula 1. In Chemical Formula 1, n, L1, L2, A, and m are as defined herein.
Owner:SAMSUNG ELECTRONICS CO LTD

Zinc metal eutectic, preparation method and application thereof in photocatalytic degradation of chemical warfare agents

ActiveCN119751488BOrganic-compounds/hydrides/coordination-complexes catalystsGroup 2/12 element organic compoundsZinc metalEthyl group
The application discloses a zinc metal eutectic crystal, a preparation method thereof and application of the zinc metal eutectic crystal in photocatalytic degradation of chemical warfare agents. The zinc metal eutectic crystal is synthesized by using pyrene, 7,7,8,8-tetracyanoquinodimethane and zinc acetate dihydrate as raw materials, adding an organic solvent and adopting a simple solvent evaporation method, and the product is marked as: Zn 2+ -TCNQ-Py. The application can obtain the zinc metal eutectic crystal by the simple and low-cost solvent evaporation method, and the disadvantages of low yield and time consumption are overcome. Meanwhile, the Zn 2+ -TCNQ-Py has a strong active oxygen generation capacity, can photocatalytically degrade a chemical warfare agent, mustard gas analog, into low-toxicity 2-chloroethyl ethyl sulfoxide, has superior degradation efficiency and good cycle stability, and has high practical application value.
Owner:NANCHANG UNIV

Tri-(adamantyl)phosphines and applications thereof

PendingUS20260102762A1Group 1/11 element organic compoundsRhodium organic compounds
In one aspect, phosphine compounds comprising three adamantyl moieties (PAd3) and associated synthetic routes are described herein. Each adamantyl moiety may be the same or different. For example, each adamantyl moiety (Ad) attached to the phosphorus atom can be independently selected from the group consisting of adamantane, diamantane, triamantane and derivatives thereof. Transition metal complexes comprising PAd3 ligands are also provided for catalytic synthesis including catalytic cross-coupling reactions.
Owner:THE TRUSTEES OF PRINCETON UNIV

Barium titanyl oxalate, method for producing the same, and method for producing barium titanate

ActiveCN115916792BAlkaline earth titanatesTitanium organic compoundsOXALIC ACID DIHYDRATEBarium titanate
This invention provides barium oxalate oxytannin, which yields barium titanate with small particle size and high crystallinity, and provides an industrially advantageous method for manufacturing the barium oxalate oxytannin. The barium oxalate oxytannin is characterized in that, in thermogravimetric analysis, a weight reduction rate of 99% relative to 1000°C is achieved at a temperature of 600–700°C. The method for manufacturing the barium oxalate oxytannin is characterized by mixing a solution containing oxalic acid (solution A) with a solution containing a titanium compound and a barium compound (solution B) and reacting them to produce barium oxalate oxytannin. In this method, solution A is first added to a reaction vessel, and then solution B is mixed into solution A while stirring it within the reaction vessel. The mixing time of solution B into solution A is less than 10 seconds from start to finish.
Owner:NIPPON CHEMICAL IND CO LTD