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38results about "Group 2/12 element organic compounds" patented technology

Refinery fouling prevention process

ActiveJP7726448B2Thermal non-catalytic crackingDistillation corrosion inhibition
To provide an additive to reduce fouling of crude hydrocarbon refinery components.SOLUTION: Fouling in a hydrocarbon refining process is reduced by adding to a crude hydrocarbon for a refining process, an additive combination comprising: (A) a polyalkenyl-substituted carboxylic acid or anhydride; and (B) an overbased metal hydrocarbyl-substituted hydroxybenzoate detergent; where the mass:mass ratio of (A) to (B) is in the range of 10:1 to 1:10, and the treatment rate of the additive combination is in the range of 5 to 1000 ppm by mass.SELECTED DRAWING: None
Owner:INFINEUM INT LTD

Process for removing tin oxide deposits

ActiveUS12552819B2Tin organic compoundsGroup 2/12 element organic compoundsPhysical chemistryDry etching
Specific organometallic compounds of Formula I: Qx-Sn-(A1R1′z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and / or a process for dry etching a substrate using a particular etchant gas with a specific additive.
Owner:SEASTAR CHEM ULC

Radionuclide-labeled boron-containing drugs and their manufacture and use

The present invention relates to the field of radioactive drugs, specifically to radionuclide-labeled boron-containing drugs and their preparation methods. The boron-containing drugs are obtained by labeling them with at least one radionuclide, and the boron-containing drugs are obtained by polymerization of dopamine and its derivatives with boron-containing compounds. The radionuclide-labeled boron-containing drugs of the present invention have tumor-targeting properties. A method for labeling a radionuclide to a boron-containing drug via complexation or covalent bonding is also provided.
Owner:CHENGDU NEW RADIOMEDICINE TECH CO LTD

Synthesis of KIF18A inhibitors

The present invention relates to an improved preparation of KIF18A inhibitors having the chemical structure compound (1), or salts thereof, compound (1a), wherein HA is as defined herein, as well as key intermediates thereof, namely, compound (2a), compound (3a), compound (5) or salts thereof, and compound (6a) or hydrates thereof, preferably compound (6a-1), of the formulas: compound (2a), compound (3a), compound (5) or salts thereof, and compound (6a) or hydrates thereof. The present invention further relates to solid forms of compound (6a), preferably crystalline hydrate forms of compound (6a-1). [Formula 1] TIFF2025505892000080.tif42165 [C2] TIFF2025505892000081.tif42165 [3] TIFF2025505892000082.tif84165 [C4] TIFF2025505892000083.tif22165
Owner:AMGEN INC

Multilayer molecular film photoresist having molecular beam structure and method for producing the same

The multilayer molecular film photoresist includes a plurality of molecular beams each extending upwardly of a substrate and arranged laterally, each of the molecular beams being formed by bonding a plurality of inorganic monomolecules with organic monomolecules interposed between at least some of the inorganic monomolecules.
Owner:HUNET PLUS

Organometallic compounds for depositing high-purity tin oxide, as well as dry etching and deposition reactors for tin oxide films.

PendingJP2026071243ATin organic compoundsGroup 2/12 element organic compoundsArylPhysical chemistry
Provided are an organometallic compound useful for deposition of high purity tin oxide, and a composition containing the compound. 【Solution means】Formula II: Sn(NR 2 (CH2) n A 2 )2 (wherein A 2 is NR 2’ or O; R 2 group is H and an alkyl group and an aryl group having 1 to 10 carbon atoms; R 2’ group is H and an alkyl group or an acyl group and an aryl group having 1 to 10 carbon atoms; n is 2 or 3; optionally, NR 2 (CH2) n NR 2’ forms a cyclic structure) of an organometallic compound is provided.
Owner:シースターケミカルズユーエルシー

Method for producing organic acid salt and method for producing perovskite-type composite oxide

Provided is a method for industrially advantageously producing an organic acid salt from which a perovskite-type composite oxide having a small particle diameter and a high crystallinity can be obtained, the method comprising mixing and reacting a solution (solution A) containing any one component of an organic acid, an A-site element compound, and a B-site element compound with a solution (solution B) containing two components of the organic acid, the A-site element compound, and the B-site element compound to produce an organic acid salt, wherein the two components are not contained in the solution A. The method for producing the organic acid salt is characterized by firstly feeding, into a reaction vessel, either one of the solution A and the solution B and a granular medium in an amount of 5.0-95.0 vol% relative to the volume of the one solution, and then stirring the solution and the granular medium in the reaction vessel and therewhile mixing and reacting the solution in the reaction vessel with the other of the solution A and the solution B.
Owner:NIPPON CHEMICAL IND CO LTD

Process for removing tin oxide deposits

ActiveUS20250346614A1Tin organic compoundsGroup 2/12 element organic compoundsPhysical chemistryDry etching
Specific organometallic compounds of Formula I: Qx-Sn-(A1R1′z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and / or a process for dry etching a substrate using a particular etchant gas with a specific additive.
Owner:SEASTAR CHEM ULC

Chelated nutrients and methods of using them

ActiveDE602022019021T2BiocideGroup 1/11 element organic compounds
Owner:ICL AMERICA DO SUL SA

Production method of organic acid salt and production method of perovskite-type complex oxide

To provide an industrially advantageous production method of an organic acid salt with which a highly crystalline perovskite type complex oxide with a small particle size can be obtained.SOLUTION: In a production method of an organic acid salt, a solution (solution A) containing any one of an organic acid, an A-site element compound, and a B-site element compound and a solution (solution B) containing two of the organic acid, the A-site element compound, and the B-site element compound that are not contained in the solution A are mixed and made to react with each other so as to obtain the organic acid salt, and in the production method of the organic acid salt, previously one of the solution A and the solution B and a granular medium of 5.0-95.0 vol.% based on the volume of the one solution are charged into a reaction vessel, and then while stirring the liquid and the granular medium in the reaction vessel, the other of the solution A and the solution B is mixed and made to react with the liquid in the reaction vessel.SELECTED DRAWING: None
Owner:NIPPON CHEMICAL IND CO LTD

Preparation method and application of decatungstate-containing hybrid material

The invention belongs to the technical field of photocatalytic material preparation, and relates to a preparation method and application of a decatungstate-containing hybrid material, in particular to application of the decatungstate-containing hybrid material in a photocatalytic aryl acetic acid decarboxylation reaction. The preparation method comprises the following steps: taking N, N '-bis (3, 5-dimethyl-1H-2-pyrrolyl)-1, 4, 5, 8-naphthalimide, tetrabutyl phosphonium decatungstate and zinc nitrate hexahydrate as raw materials, stirring in a mixed solvent, and standing to obtain the decatungstate-containing hybrid material. The material has the advantages of higher thermal stability, low requirement on synthesis equipment, simplicity and convenience in operation, low cost and large-scale production, can be used for catalyzing the oxidative decarboxylation reaction of aryl acetic acid to generate corresponding aryl formaldehyde under the irradiation of visible light, has the characteristics of high conversion rate and high chemical stability, and is suitable for industrial production. And the catalyst has extremely high catalytic activity for converting aryl acetic acid into aryl formaldehyde through oxidative decarboxylation.
Owner:QUJING NORMAL UNIV

Organometallic compounds for depositing high-purity tin oxide, as well as dry etching and deposition reactors for tin oxide films.

ActiveJP7842823B2Tin organic compoundsGroup 2/12 element organic compoundsPhysical chemistryDry etching
To provide a method for removing a tin oxide deposit from an inner surface of a reactor chamber or from a substrate in the reactor chamber.SOLUTION: A method includes the step of introducing an etchant gas into a reactor chamber containing a tin oxide deposit. The etchant gas is a compound of a general formula A3OmXn. (In the formula, A3 is selected from a group consisting of C, N, and S. O is oxygen. Each X is independently selected from a group consisting of halogens. Subscripts m and n are greater than zero.) The method also includes the steps of: either before or after introduction, activating the etchant gas; allowing an etching reaction to proceed between the activated etchant gas and the tin oxide deposit; and evacuating the etchant gas together with gaseous products of the etching reaction.SELECTED DRAWING: None
Owner:シースターケミカルズユーエルシー

Metal organic frameworks for OLED applications and methods of use

PendingUS20260022138A1Group 4/14 element organic compoundsGroup 1/11 element organic compoundsMetal clustersMetal-organic framework
Aspects of the disclosure relates to articles, compositions, and systems for several optoelectronic applications. In some embodiments, the disclosure relates to the metal organic frameworks (MOF). The MOFs comprise a plurality of metal clusters and a plurality of ligands that are coordinated with the plurality of metal clusters. Some aspects of the disclosure relate to the luminescent MOFs and the various synthetic methods for their preparation. Some aspects also disclose one or more mechanisms unveiled by luminescent MOFs for various OLED applications. In some embodiments, the disclosure relates to the lanthanide-based metal organic frameworks for OLED applications. Some aspects of the disclosure focus on the versatile coordination chemistry shown by the lanthanides along with the structural tunability of MOFs, thereby resulting in exceptional luminescence, high thermal stability and tuneable electronic properties. In some embodiments, the disclosure relates to the enhancement of the luminescent behaviour by the utilization of dual-based lanthanide metal-organic frameworks. Lastly, in some embodiments, the disclosure relates to the zirconium-based and zinc-based MOFs due to their stability and tuneable luminescence behaviour. Thus, the lanthanide-based MOFs play an important role in shaping the future of advanced photonic and optoelectronic devices due to their outstanding characteristic properties and their ability to integrate multiple functionalities within a single framework.
Owner:CONWAY DAVID JONATHAN +3

Process for producing barium titanyl oxalate and process for producing barium titanate

A method for producing barium titanyl oxalate, characterized by a method for producing barium titanyl oxalate by mixing a solution (A liquid) containing oxalic acid and a solution (B liquid) containing a titanium source and a barium source, allowing them to react, and thereby producing barium titanyl oxalate, wherein the A liquid and the B liquid are supplied to one end side of a reaction liquid flow path, respectively, the A liquid and the B liquid are mixed within the reaction flow path, and the reaction liquid is discharged from the other end side of the reaction liquid flow path, after which solid-liquid separation of the reaction liquid is performed; the residence time of the reaction liquid within the reaction liquid flow path is within 30 seconds; or the A liquid and the B liquid are supplied to one end side of a reaction liquid flow path, respectively, the A liquid and the B liquid are mixed at one end side of the reaction liquid flow path, the reaction liquid is allowed to generate a vortex while moving toward the other end side of the reaction liquid flow path, and the reaction liquid is discharged from the other end side of the reaction liquid flow path, after which solid-liquid separation of the reaction liquid is performed.
Owner:NIPPON CHEMICAL IND CO LTD

Organometallic compounds for the deposition of high purity tin oxide and dry etching of the tin oxide films and deposition reactors

ActiveUS12655164B2Tin organic compoundsGroup 2/12 element organic compounds
Specific organometallic compounds of Formula I: Qx-Sn-(A1R1′z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and / or a process for dry etching a substrate using a particular etchant gas with a specific additive.
Owner:SEASTAR CHEM ULC

Method for producing organic acid salt and method for producing perovskite-type composite oxide

To provide a method for industrially advantageously producing an organic acid salt from which a perovskite type multiple oxide having a small particle diameter and high crystallinity is obtained.SOLUTION: In the method for producing an organic acid salt, a solution (solution A) containing an organic acid and a solution (solution B) containing an A-site element compound and a B-site element compound are supplied to a reaction vessel, and a liquid in the reaction vessel is discharged from the reaction vessel to perform a production reaction of the organic acid salt. Supplying the liquid A and the liquid B to the reaction vessel while stirring, in the reaction vessel, the liquid in the reaction vessel and a granular medium in an amount of 5.0 to 95.0% by volume based on the volume of the liquid in the reaction vessel, and discharging the liquid in the reaction vessel from the reaction vessel.SELECTED DRAWING: Figure 1
Owner:NIPPON CHEMICAL IND CO LTD

Strontium compound, method of manufacturing thin film containing strontium and semiconductor device using the same

PendingUS20260159530A1Group 2/12 element organic compoundsChemical vapor deposition coating
A strontium compound, a method of making a thin film with the strontium compound, and a method of manufacturing a semiconductor device including the thin film.The strontium compound is represented by Chemical Formula 1:In Chemical Formula 1, n, L1, L2, A, and m are as defined herein.
Owner:SAMSUNG ELECTRONICS CO LTD

Group 2 metal containing film forming compositions and vapor deposition of the films using the same

PCT designated stage expiredWO2025151572A1Group 2/12 element organic compoundsChemical vapor deposition coatingAlkaline earth metalPhysical chemistry
A method of forming Group 2 metal containing films on a substrate comprises a) exposing the substrate to a vapor of a Group 2 metal containing film forming composition that contains an alkaline earth metal precursor having the formula:wherein M is Be, Mg, Ca, Sr, or Ba; R1 - R6 each independently are a C1-C10 alkyl group, a fluoro group, an alkylsilyl group, a germyl group, an alkylamide or an alkylsilylamide, b) depositing at least part of the alkaline earth metal precursor onto the substrate to form a Group 2 metal-containing film through a vapor deposition process; and c) repeating a) and b) until a desired thickness of the Group 2 metal containing film is formed.
Owner:LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE +1

Compound, thin film-forming material, and method for producing thin film

Provided is a compound represented by the following general formula (1) or (2): where R1 to R4 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M1 represents a gallium atom or an indium atom; where R7 to R10 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R11 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and M2 represents a gallium atom or an indium atom.
Owner:ADEKA CORP

METALLO-LIOTHYRONIN

ActiveDE602019078051T2Pharmaceutical non-active ingredientsGroup 2/12 element organic compounds
Owner:SYNTHONICS INC

Group 2 metal containing film forming compositions and vapor deposition of the films using the same

ActiveUS20250223696A1Group 2/12 element organic compoundsChemical vapor deposition coatingAlkaline earth metalPhysical chemistry
A method of forming Group 2 metal containing films on a substrate comprises a) exposing the substrate to a vapor of a Group 2 metal containing film forming composition that contains an alkaline earth metal precursor having the formula:wherein M is Be, Mg, Ca, Sr, or Ba; R1-R6 each independently are a C1-C10 alkyl group, a fluoro group, an alkylsilyl group, a germyl group, an alkylamide or an alkylsilylamide, b) depositing at least part of the alkaline earth metal precursor onto the substrate to form a Group 2 metal-containing film through a vapor deposition process; and c) repeating a) and b) until a desired thickness of the Group 2 metal-containing film is formed.
Owner:LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE

Strontium compound, method for forming oxide film, method for manufacturing semiconductor device, and semiconductor device

PendingCN122167454AGroup 2/12 element organic compoundsChemical vapor deposition coatingDevice materialPhysical chemistry
Disclosed are a strontium compound, a method of forming an oxide thin film, a method of manufacturing a semiconductor device, and a semiconductor device. The strontium compound is represented by Chemical Formula 1. In Chemical Formula 1, n, L1, L2, A, and m are as defined herein.
Owner:SAMSUNG ELECTRONICS CO LTD

Compound, raw material for forming thin film, and method for producing thin film

A compound represented by general formula (1) (in formula (1), R1-R4 each independently represent a hydrogen atom, an alkyl group having 1-5 carbon atoms, or the like, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1-5 carbon atoms, and M1 represents a gallium atom or an indium atom) or general formula (2) (in formula (2), R7-R10 each independently represent a hydrogen atom, an alkyl group having 1-5 carbon atoms, or the like, R11 represents a hydrogen atom or an alkyl group having 1-5 carbon atoms, and M2 represents a gallium atom or an indium atom).
Owner:ADEKA CORP