The invention relates to a method for preparing a GaN power device based on magnetron
sputtering deposition, and belongs to the field of
microelectronics, and the method comprises the steps: sequentially growing an AlN nucleating layer, a GaN buffer layer, an AlN
insertion layer, an AlGaN
barrier layer and a GaN cap layer on a substrate;
etching the GaN cap layer, growing a source
electrode and a drain
electrode on an
etching area, and annealing the source
electrode and the drain electrode; putting the device into direct-current magnetron
sputtering equipment, and growing a
gate dielectric layer and a gate electrode
metal material at the same time; and taking out the device, covering
photoresist above a gate electrode region,
etching a gate electrode
metal material outside the gate electrode region to form a gate electrode, and growing a
passivation layer in an etching region to obtain the GaN power device. According to the invention, the deposition of the combination of the
gate dielectric layer and the gate electrode
metal material is realized in the same chamber, the potential
pollution risk in the process steps can be effectively reduced, the interface performance of the device is improved, the preparation efficiency can be improved, and the production cost is reduced.