43results about "Antimony organic compounds" patented technology

The invention provides an organic metal compound and a preparation method thereof, a patterning composition, a patterning method, a patterning film, a patterning substrate and an electronic component, the organic metal compound is obtained through special molecular design, the molecular formula of the organic metal compound comprises a structure shown as a formula 1: (RaM) b (mu2-O) c (L) d formula 1, [mu] 2-O is a two-linked oxygen atom, R is at least one of C1-30 linear alkyl or branched alkyl or naphthenic base, C2-30 alkenyl, C2-30 alkynyl and C6-30 aryl; l is an organic ligand capable of coordinating with M, M is Sn, Sd or In, 1 < = a < = 5, 1 < = b < = 10, 1 < = c < = 10, and 1 < = d < = 6b. The organometallic compound of the present invention can be used with advantages in terms of high resolution and pattern fidelity, and is particularly suitable for fine patterning in microelectronic and semiconductor manufacturing.

To provide photoacid generators, photoresist compositions, and pattern formation methods.SOLUTION: A photoacid generator includes: an organic cation; and an anion including an anionic core, wherein the anionic core includes a cyclopentadienide group, wherein the cyclopentadienide group is substituted with an organic group including a semi-metal element, and wherein the anion is substituted with one or more electron withdrawing groups.

The present invention relates to an antimony-containing thin film evaporation composition containing a novel antimony compound that can be effectively used as a precursor for an antimony-containing thin film, and a method for producing an antimony-containing thin film using the same.

Disclosed are Group V element-containing precursors, methods for their synthesis, and methods for their use in film deposition. The precursor is (SiR3) 3-m A(Si a H 2a+1 ) m , (SiR3) 3-n-p A(Si a H 2a+1 ) n (Si b H 2b+1 ) p , or A(Si a H 2a+1 )(Si b H 2b+1 )(Si c H 2c+1 ) (wherein a=1-6; b=1-6; c=1-6; a≠b≠c; m=1-3; n=1-2, p=1-2, n+p=2-3; A=As, P, Sb, Bi; R is C1-C 10 (A is selected from linear, branched, or cyclic alkyl, alkenyl, alkynyl groups of A). Synthesis methods include one-step, two-step, or three-step reaction between halo(poly)silanes and tris(trialkylsilyl) derivatives of A, or one-pot mixture reaction of two or three halo(poly)silanes with a mixture of tris(trialkylsilyl) derivatives of A. Deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, epitaxy, etc.

Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.

Provided are a resist composition and a method of manufacturing a pattern by using the same, the resist film including an organometallic compound represented by Formula 1, and a solvent including a polar aprotic solvent:wherein R11, R12, and n in Formula 1 are as defined in the specification.

This invention discloses an antimony-doped wide-bandgap zirconium chloride powder-emitting crystal material, its preparation method, and its application. The chemical formula of the powder-emitting crystal material is (C9H). 15 N3)2ZrCl8:Sb 3+ It belongs to the monoclinic crystal system, with space group P21 / c; in the described photoluminescent crystal material, each zirconium atom is coordinated with 8 chlorine atoms to form [ZrCl8]. 4‑ Polyhedral structure, organic cation (C9H) 15 N3) + It is linked to inorganic anions via C–N–H···Cl bonds, forming discrete [ZrCl8]. 4‑ The octahedral structure is replaced by organic cations (C9H). 15 N3) + Complete isolation is achieved, forming a zero-dimensional ionic crystal structure. This invention overcomes the problems of single luminescent center, limited emission wavelength, and insufficient luminescence intensity in undoped zirconium-based chlorides by introducing antimony. Antimony, as an effective luminescent center, can promote the radiative recombination process and achieve high-brightness broadband emission.

To provide a photoelectric conversion element that exhibits excellent photoelectric conversion properties.SOLUTION: A photoelectric conversion element contains a bicyclo compound represented by the following general formula (I), a tautomer or stereoisomer thereof, or a salt thereof. In the general formula (I), Z1 and Z2 may be the same or different and each represent C-R or a nitrogen atom. X1, X2, and X3 may be the same or different and each represent a divalent linking group that forms a ring structure together with the central bicyclo ring.SELECTED DRAWING: None

The invention discloses an application of an antimony fluoride heterocyclic compound in an electrolyte and the electrolyte thereof, the structure of the antimony fluoride heterocyclic compound is as shown in the following formula (I): when the antimony fluoride heterocyclic compound is applied to the electrolyte, not only can the cycle performance of a battery be improved, but also the high-temperature storage performance of the battery can be improved.

The present application relates to photoresists for semiconductor manufacturing. An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. The organometallic precursor comprises an aromatic bidentate ligand, a transition metal coordinated to the aromatic bidentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic bidentate ligand comprises a plurality of pyrazine molecules.

An organic antimony chlorine compound II and trifluoromethanesulfonate III are used as raw materials, Ni (dppp) Cl2 and XPhos Pd G3 are used as catalysts, zinc powder is used as a reducing agent, lithium bromide is used as an additive, NMP is used as a solvent, and a reaction is carried out in a high-temperature nitrogen atmosphere. The product obtained by the method is high in yield and has relatively high drug application value.

The invention provides continuous antimony mercaptide production equipment, and relates to the technical field of antimony mercaptide production, the continuous antimony mercaptide production equipment comprises a feeding machine, a mixing kettle is mounted on one side of the feeding machine, a first reaction kettle is placed on one side of the mixing kettle, a second reaction kettle is placed on one side of the first reaction kettle, and a first cooling kettle is placed on one side of the second reaction kettle; a second cooling kettle is placed on one side of the first cooling kettle, a plate-and-frame filter is placed on one side of the second cooling kettle, a storage tank is placed on one side of the plate-and-frame filter, and the antimony mercaptide continuous production equipment and process have the primary advantage that the product quality is greatly improved. Through the fine control means shown in the embodiment 3 and the embodiment 4, in the feeding link of the mixing kettle, by means of cooperative work of a pressure sensor, a raw material component spectrum analyzer and a miniature image recognition sensor, a PID control algorithm and a multiple linear regression algorithm are used, and the feeding speed of the mixing kettle is improved. Accurate and stable raw material feeding pressure and ultra-accurate proportioning feeding are achieved.

The invention discloses a powder light emitting crystal material of antimony-doped wide bandgap zirconium-based chloride and a preparation method and application of the powder light emitting crystal material, the chemical formula of the powder light emitting crystal material is (C9H15N3) 2ZrCl8: Sb < 3 + >, the powder light emitting crystal material belongs to a monoclinic system, and the space group is P21 / c; in the powder light emitting crystal material, each zirconium atom is coordinated with eight chlorine atoms to form a [ZrCl8] < 4-> polyhedral structure, organic cations (C9H15N3) < + > are connected with inorganic anions through C-N-H... Cl bonds, and the discrete [ZrCl8] < 4-> octahedral structure is completely isolated by the organic cations (C9H15N3) < + > to form a zero-dimensional ion crystal structure. According to the invention, the antimony element is introduced to overcome the problems of single luminescence center, limited emission wavelength and insufficient luminescence intensity of undoped zirconium-based chloride, and antimony is used as an effective luminescence center to promote the radiation recombination process and realize high-brightness wide-spectrum emission.

The invention provides polynuclear Sb compounds modified by carboxylic acid ligands as well as a preparation method and patterning application of the polynuclear Sb compounds. A normal-temperature and normal-pressure ultrasonic method is adopted for synthesis of the multi-core Sb compound, high-cost antimonic acid raw materials and harsh conditions such as PH, temperature and high pressure are avoided, and designability and diversity of the multi-core Sb compound are enhanced. The general formula of the compound is (Ph2Sb) 4 (mu2-O) 4 (mu2-OR ') 2 [L] 2. Wherein R'is at least one of H, C1-30 straight chain alkyl or branched chain alkyl or naphthenic base, C2-30 alkenyl, C2-30 alkynyl and C6-30 aryl; l is a carboxylic acid ligand. Besides, groups capable of being used for photochemical reaction and Sb atoms with high EUV absorption cross sections are jointly assembled into the multi-core Sb compound, so that the sensitivity of the photoresist material is improved, and the application of the multi-core Sb compound in the photoetching field is researched. And reference is provided for synthesis of novel antimony-oxygen clusters and patterning application of the novel antimony-oxygen clusters in the photoetching field.

To provide a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.SOLUTION: There is provided a composition for depositing a thin film that includes an antimony compound represented by the following Chemical Formula 1. In the Chemical Formula 1, R1 to R5 are independently a linear or branched (C1 to C7) alkyl.SELECTED DRAWING: Figure 5

Triphenyl antimony-based covalent organic molecular cage and its preparation method and application, related to the field of covalent organic molecular cage OMCs materials. The compound is formed by condensation of triphenyl antimony trialdehyde and 1,2-cyclohexanediamine monomer, and the specific steps are to add monomer triphenyl antimony trialdehyde and 1,2-cyclohexanediamine to a solvent, and most of the solvent is removed in vacuo after stirring at room temperature for 48 hours, and then a small amount of methanol is added to the system to precipitate a white precipitate, and the obtained solid is collected by centrifugation, and the final product is obtained after vacuum drying. The organic molecular cage to which the present invention relates introduces a triphenyl antimony structural unit with a strong coordination ability into the material for the first time, and shows excellent performance in terms of the size controllable preparation and stability of metal nanocatalysts, and has broad application prospects in the field of catalysis.

Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

Disclosed are Group V element-containing precursors and methods of synthesizing the same and using the same on film depositions. The precursors are (SiR3)3-mA(SiaH2a+1)m, (SiR3)3-n-pA(SiaH2a+1)n(SibH2b+1)p or A(SiaH2a+1)(SibH2b+1)(SicH2c+1) wherein a = 1 to 6; b = 1 to 6; c = 1 to 6; a ≠ b ≠ c; m = 1 to 3; n = 1 to 2, p = 1 to 2, n + p = 2 to 3; A = As, P, Sb, Bi; and R is selected from a C1 to C10, linear, branched or cyclic alkyl, alkenyl, alkynyl group. The synthesis methods include one-step, two-step or three-step reaction(s) between halo(poly)silane(s) and a tris(trialkylsilyl) derivative of A or a one-pot mixing reaction between a mixture of two or three halo(poly)silanes and the tris(trialkylsilyl) derivative of A. The deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, Epitaxy, or the like.

A photoacid generator (PAG) anion, a photoresist composition, and a method are disclosed. The PAG anion includes a moiety, selected from an alkyl group, a monocyclic aromatic group, and a bicyclic aromatic group, that includes a carbon atom with a negative elementary charge. The PAG anion also includes an electron acceptor atom, selected from boron(III), aluminum(III), and phosphorus(V), which is covalently bonded to the carbon atom. The PAG anion also has at least one electron-withdrawing R group. The photoresist composition has a PAG that includes the PAG anion and a cation selected from triphenylsulfonium, diphenyliodonium, phenylthiolanium, and derivatives thereof. The method includes forming a layer of the photoresist composition over a material surface on a substrate, irradiating the layer to form a pattern of radiation-exposed regions, selectively removing portions of the irradiated layer to form exposed portions of the material surface, and etching or ion implanting the exposed portions.

The invention belongs to the technical field of organic light-emitting materials and semiconductors, and particularly relates to an asymmetric triptycene compound and an electroluminescent device. According to the invention, triptycene is taken as a matrix, and the asymmetric triptycene compound is obtained by substituting a site 1 and a site 8 of the triptycene; the structural formula of the asymmetric triptycene compound is shown in the specification. The asymmetric triptycene compound is used as a guest luminescent material, and the prepared electroluminescent device has narrower half-peak width, higher luminous efficiency and longer service life. .

The invention belongs to the technical field of luminescent materials, and particularly relates to single crystals and microcrystals of antimony-based organic and inorganic metal halides as well as a preparation method and application of the single crystals and microcrystals. The chemical formula of the antimony-based organic-inorganic metal halide is (SbCl5) 2-[(C21H22P) 2] < 2 + >, C21H21P is tris (o-methylphenyl) phosphine, the antimony-based organic-inorganic metal halide belongs to an ionic compound, a basic unit of the antimony-based organic-inorganic metal halide is composed of one (SbCl5) 2-and two (C21H22P) < + >, and a single crystal of the antimony-based organic-inorganic metal halide can be prepared through a crystal growth room temperature volatilization method. According to the present invention, the antimony-based organic-inorganic metal halide microcrystal is obtained through stirring and rapid growth so as to achieve orange red luminescence, and the material has excellent structure and optical stability in water, and has good application prospects in the fields of underwater illumination and display.

Embodiments disclosed herein are directed to positive-tone photoresist compositions. Traditional chemically amplified resists have intrinsic limitations for use in high resolution Extreme UltraViolet (EUV) lithography due to low EUV absorptivity. Positive-tone photoresists efficiently absorb EUV light are needed to meet demands of high resolution, high sensitivity, and low line-edge-roughness. Organometallic complexes are promising candidates providing high EUV absorptivity. Positive-tone resists are used for most lithography steps in high-volume manufacturing making metal-containing positive-tone resists enormously valuable. Thus, embodiments herein disclose new positive-tone photoresist lithography compositions, and methods for forming resist patterns using one or more lithography compositions.

The invention belongs to the technical field of nano composite luminescent materials and LED display and illumination luminescent devices, and particularly relates to orange fluorescent powder as well as a preparation method and application thereof, and the molecular formula of the orange fluorescent powder is KC20H24O6Cl4InxSb (1-x), wherein 0 lt; xlt; 1. The orange fluorescent powder can emit orange light, the quantum yield is up to 0.96, and the orange fluorescent powder can be used in the fields of illumination, display and the like and has a good application prospect.

This invention belongs to the field of microelectronics manufacturing and photoresist materials technology, and discloses an organoantimony oxide cluster modified with trigonal pyramidal oxyacid anion ligands, its preparation method, and its application; the general chemical formula of the organoantimony oxide cluster modified with trigonal pyramidal oxyacid anion ligands is [(R i Sb)2( µ 2-O) m (L) n ] 2‑ Wherein, R is selected from C1~C8 alkyl, C2~C8 alkenyl, C2~C8 alkynyl, phenyl or benzyl; L is selected from selenite, tellurite or sulfite. µ 2-O refers to oxygen bridging two antimony atoms; i=1~4; m=0~4; n=1~5; This cluster compound utilizes the high-efficiency energy absorption characteristics of the antimony metal core, exhibiting high sensitivity to electron beams and extreme ultraviolet light, effectively suppressing random effects during exposure, improving pattern resolution and reducing line edge roughness; at the same time, it has excellent solubility and film-forming properties in commonly used spin-coating solvents, and can form uniform and defect-free high-quality films.

The present invention relates to a composition for depositing an antimony-containing thin film and a method for manufacturing an antimony-containing thin film by using the same, the composition comprising an antimony compound which can be effectively used as a precursor of an antimony-containing thin film. The antimony compound according to one embodiment is in a liquid state at room temperature, and thus has excellent storability and handling properties and high reactivity, thereby being capable of effectively forming a metal thin film.

The present application relates to triethyl antimony processing technical field, especially in kind of preparation triethyl antimony, including the following steps: under the protection of inert gas to the reaction bottle raw material antimony trichloride and ether solvent is added, and the atmospheric pressure reflux device is installed, and the stirring is started;Ethyl lithium ether solution is added dropwise to the reaction bottle, after dropwise addition is completed, 70~80 ℃ stirring reaction is kept for 3~6h;After the stirring reflux is finished, the solvent ether is distilled out first, and the triethyl antimony initial product is obtained;The vacuum distillation device is installed, and the triethyl antimony crude product is obtained by vacuum distillation;The obtained triethyl antimony crude product is subjected to twice vacuum rectification, and high-purity triethyl antimony is obtained, and the purity reaches 6N by nuclear magnetic resonance, ICP detection.Pure triethyl antimony is generated by the reaction of ethyl lithium and antimony trichloride under the protection of inert gas, the preparation method is safe and efficient, simple operation, raw material is easy to obtain, no by-product, high yield and high purity product.

Disclosed are a semiconductor photoresist composition and a method of forming or providing a pattern using the same. The semiconductor photoresist composition may include an organometallic compound; a polymer additive including a structural unit represented by Chemical Formula 1; and a solvent.

To provide a method and a compound useful for depositing a metal and a metal-containing layer in a gas phase.SOLUTION: The invention relates to the use of a metal complex, which has at least one ligand of the formula R1-N3-R2, wherein R1 and R2 are hydrocarbon moieties, for depositing the metal or a compound of the metal from the gas phase. The invention further relates to methods for depositing metals from the metal complexes, and to metal complexes, substituted triazene compounds and methods for the production thereof.SELECTED DRAWING: Figure 14

The present invention belongs to the field of preparation and application of metal materials and relates to a class of Cl / Br halogen-doped ionic antimony complexes and their preparation methods and applications. The general structural formula of the complex is shown below: #imgabs0#, wherein R is methyl, ethyl, n-propyl or n-butyl; and x=0, 1, 2, 3, 4 or 5. The preparation method comprises the following steps: adding a benzylamine salt and antimony trichloride or antimony tribromide to a solvent in a molar ratio, reacting the mixture, and using ether as a reverse solvent to obtain a single crystal of the target product; or adding a benzylamine salt and antimony trichloride or antimony tribromide to a solvent in a molar ratio, and heating the mixture to obtain a single crystal of the target product. The luminescence properties of the material can be controlled by varying the halogen type or organic cation in the complex. Due to the advantages of the antimony complex, such as high stability, simple preparation, and high-efficiency, short-life luminescence, the ionic antimony complex has a wide range of uses and can be applied to fields such as X-ray imaging and lighting displays.