34results about "Antimony organic compounds" patented technology

The invention provides an organic metal compound and a preparation method thereof, a patterning composition, a patterning method, a patterning film, a patterning substrate and an electronic component, the organic metal compound is obtained through special molecular design, the molecular formula of the organic metal compound comprises a structure shown as a formula 1: (RaM) b (mu2-O) c (L) d formula 1, [mu] 2-O is a two-linked oxygen atom, R is at least one of C1-30 linear alkyl or branched alkyl or naphthenic base, C2-30 alkenyl, C2-30 alkynyl and C6-30 aryl; l is an organic ligand capable of coordinating with M, M is Sn, Sd or In, 1 < = a < = 5, 1 < = b < = 10, 1 < = c < = 10, and 1 < = d < = 6b. The organometallic compound of the present invention can be used with advantages in terms of high resolution and pattern fidelity, and is particularly suitable for fine patterning in microelectronic and semiconductor manufacturing.

To provide photoacid generators, photoresist compositions, and pattern formation methods.SOLUTION: A photoacid generator includes: an organic cation; and an anion including an anionic core, wherein the anionic core includes a cyclopentadienide group, wherein the cyclopentadienide group is substituted with an organic group including a semi-metal element, and wherein the anion is substituted with one or more electron withdrawing groups.

Disclosed are Group V element-containing precursors, methods for their synthesis, and methods for their use in film deposition. The precursor is (SiR3) 3-m A(Si a H 2a+1 ) m , (SiR3) 3-n-p A(Si a H 2a+1 ) n (Si b H 2b+1 ) p , or A(Si a H 2a+1 )(Si b H 2b+1 )(Si c H 2c+1 ) (wherein a=1-6; b=1-6; c=1-6; a≠b≠c; m=1-3; n=1-2, p=1-2, n+p=2-3; A=As, P, Sb, Bi; R is C1-C 10 (A is selected from linear, branched, or cyclic alkyl, alkenyl, alkynyl groups of A). Synthesis methods include one-step, two-step, or three-step reaction between halo(poly)silanes and tris(trialkylsilyl) derivatives of A, or one-pot mixture reaction of two or three halo(poly)silanes with a mixture of tris(trialkylsilyl) derivatives of A. Deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, epitaxy, etc.

Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.

Provided are a resist composition and a method of manufacturing a pattern by using the same, the resist film including an organometallic compound represented by Formula 1, and a solvent including a polar aprotic solvent:wherein R11, R12, and n in Formula 1 are as defined in the specification.

This invention discloses an antimony-doped wide-bandgap zirconium chloride powder-emitting crystal material, its preparation method, and its application. The chemical formula of the powder-emitting crystal material is (C9H). 15 N3)2ZrCl8:Sb 3+ It belongs to the monoclinic crystal system, with space group P21 / c; in the described photoluminescent crystal material, each zirconium atom is coordinated with 8 chlorine atoms to form [ZrCl8]. 4‑ Polyhedral structure, organic cation (C9H) 15 N3) + It is linked to inorganic anions via C–N–H···Cl bonds, forming discrete [ZrCl8]. 4‑ The octahedral structure is replaced by organic cations (C9H). 15 N3) + Complete isolation is achieved, forming a zero-dimensional ionic crystal structure. This invention overcomes the problems of single luminescent center, limited emission wavelength, and insufficient luminescence intensity in undoped zirconium-based chlorides by introducing antimony. Antimony, as an effective luminescent center, can promote the radiative recombination process and achieve high-brightness broadband emission.

The invention discloses an application of an antimony fluoride heterocyclic compound in an electrolyte and the electrolyte thereof, the structure of the antimony fluoride heterocyclic compound is as shown in the following formula (I): when the antimony fluoride heterocyclic compound is applied to the electrolyte, not only can the cycle performance of a battery be improved, but also the high-temperature storage performance of the battery can be improved.

An organic antimony chlorine compound II and trifluoromethanesulfonate III are used as raw materials, Ni (dppp) Cl2 and XPhos Pd G3 are used as catalysts, zinc powder is used as a reducing agent, lithium bromide is used as an additive, NMP is used as a solvent, and a reaction is carried out in a high-temperature nitrogen atmosphere. The product obtained by the method is high in yield and has relatively high drug application value.

The invention discloses a powder light emitting crystal material of antimony-doped wide bandgap zirconium-based chloride and a preparation method and application of the powder light emitting crystal material, the chemical formula of the powder light emitting crystal material is (C9H15N3) 2ZrCl8: Sb < 3 + >, the powder light emitting crystal material belongs to a monoclinic system, and the space group is P21 / c; in the powder light emitting crystal material, each zirconium atom is coordinated with eight chlorine atoms to form a [ZrCl8] < 4-> polyhedral structure, organic cations (C9H15N3) < + > are connected with inorganic anions through C-N-H... Cl bonds, and the discrete [ZrCl8] < 4-> octahedral structure is completely isolated by the organic cations (C9H15N3) < + > to form a zero-dimensional ion crystal structure. According to the invention, the antimony element is introduced to overcome the problems of single luminescence center, limited emission wavelength and insufficient luminescence intensity of undoped zirconium-based chloride, and antimony is used as an effective luminescence center to promote the radiation recombination process and realize high-brightness wide-spectrum emission.

The invention provides polynuclear Sb compounds modified by carboxylic acid ligands as well as a preparation method and patterning application of the polynuclear Sb compounds. A normal-temperature and normal-pressure ultrasonic method is adopted for synthesis of the multi-core Sb compound, high-cost antimonic acid raw materials and harsh conditions such as PH, temperature and high pressure are avoided, and designability and diversity of the multi-core Sb compound are enhanced. The general formula of the compound is (Ph2Sb) 4 (mu2-O) 4 (mu2-OR ') 2 [L] 2. Wherein R'is at least one of H, C1-30 straight chain alkyl or branched chain alkyl or naphthenic base, C2-30 alkenyl, C2-30 alkynyl and C6-30 aryl; l is a carboxylic acid ligand. Besides, groups capable of being used for photochemical reaction and Sb atoms with high EUV absorption cross sections are jointly assembled into the multi-core Sb compound, so that the sensitivity of the photoresist material is improved, and the application of the multi-core Sb compound in the photoetching field is researched. And reference is provided for synthesis of novel antimony-oxygen clusters and patterning application of the novel antimony-oxygen clusters in the photoetching field.

To provide a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.SOLUTION: There is provided a composition for depositing a thin film that includes an antimony compound represented by the following Chemical Formula 1. In the Chemical Formula 1, R1 to R5 are independently a linear or branched (C1 to C7) alkyl.SELECTED DRAWING: Figure 5

Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

Disclosed are Group V element-containing precursors and methods of synthesizing the same and using the same on film depositions. The precursors are (SiR3)3-mA(SiaH2a+1)m, (SiR3)3-n-pA(SiaH2a+1)n(SibH2b+1)p or A(SiaH2a+1)(SibH2b+1)(SicH2c+1) wherein a = 1 to 6; b = 1 to 6; c = 1 to 6; a ≠ b ≠ c; m = 1 to 3; n = 1 to 2, p = 1 to 2, n + p = 2 to 3; A = As, P, Sb, Bi; and R is selected from a C1 to C10, linear, branched or cyclic alkyl, alkenyl, alkynyl group. The synthesis methods include one-step, two-step or three-step reaction(s) between halo(poly)silane(s) and a tris(trialkylsilyl) derivative of A or a one-pot mixing reaction between a mixture of two or three halo(poly)silanes and the tris(trialkylsilyl) derivative of A. The deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, Epitaxy, or the like.

The invention belongs to the technical field of organic light-emitting materials and semiconductors, and particularly relates to an asymmetric triptycene compound and an electroluminescent device. According to the invention, triptycene is taken as a matrix, and the asymmetric triptycene compound is obtained by substituting a site 1 and a site 8 of the triptycene; the structural formula of the asymmetric triptycene compound is shown in the specification. The asymmetric triptycene compound is used as a guest luminescent material, and the prepared electroluminescent device has narrower half-peak width, higher luminous efficiency and longer service life. .

The invention belongs to the technical field of luminescent materials, and particularly relates to single crystals and microcrystals of antimony-based organic and inorganic metal halides as well as a preparation method and application of the single crystals and microcrystals. The chemical formula of the antimony-based organic-inorganic metal halide is (SbCl5) 2-[(C21H22P) 2] < 2 + >, C21H21P is tris (o-methylphenyl) phosphine, the antimony-based organic-inorganic metal halide belongs to an ionic compound, a basic unit of the antimony-based organic-inorganic metal halide is composed of one (SbCl5) 2-and two (C21H22P) < + >, and a single crystal of the antimony-based organic-inorganic metal halide can be prepared through a crystal growth room temperature volatilization method. According to the present invention, the antimony-based organic-inorganic metal halide microcrystal is obtained through stirring and rapid growth so as to achieve orange red luminescence, and the material has excellent structure and optical stability in water, and has good application prospects in the fields of underwater illumination and display.

Embodiments disclosed herein are directed to positive-tone photoresist compositions. Traditional chemically amplified resists have intrinsic limitations for use in high resolution Extreme UltraViolet (EUV) lithography due to low EUV absorptivity. Positive-tone photoresists efficiently absorb EUV light are needed to meet demands of high resolution, high sensitivity, and low line-edge-roughness. Organometallic complexes are promising candidates providing high EUV absorptivity. Positive-tone resists are used for most lithography steps in high-volume manufacturing making metal-containing positive-tone resists enormously valuable. Thus, embodiments herein disclose new positive-tone photoresist lithography compositions, and methods for forming resist patterns using one or more lithography compositions.

The invention belongs to the technical field of nano composite luminescent materials and LED display and illumination luminescent devices, and particularly relates to orange fluorescent powder as well as a preparation method and application thereof, and the molecular formula of the orange fluorescent powder is KC20H24O6Cl4InxSb (1-x), wherein 0 lt; xlt; 1. The orange fluorescent powder can emit orange light, the quantum yield is up to 0.96, and the orange fluorescent powder can be used in the fields of illumination, display and the like and has a good application prospect.

This invention belongs to the field of microelectronics manufacturing and photoresist materials technology, and discloses an organoantimony oxide cluster modified with trigonal pyramidal oxyacid anion ligands, its preparation method, and its application; the general chemical formula of the organoantimony oxide cluster modified with trigonal pyramidal oxyacid anion ligands is [(R i Sb)2( µ 2-O) m (L) n ] 2‑ Wherein, R is selected from C1~C8 alkyl, C2~C8 alkenyl, C2~C8 alkynyl, phenyl or benzyl; L is selected from selenite, tellurite or sulfite. µ 2-O refers to oxygen bridging two antimony atoms; i=1~4; m=0~4; n=1~5; This cluster compound utilizes the high-efficiency energy absorption characteristics of the antimony metal core, exhibiting high sensitivity to electron beams and extreme ultraviolet light, effectively suppressing random effects during exposure, improving pattern resolution and reducing line edge roughness; at the same time, it has excellent solubility and film-forming properties in commonly used spin-coating solvents, and can form uniform and defect-free high-quality films.

The present invention relates to a composition for depositing an antimony-containing thin film and a method for manufacturing an antimony-containing thin film by using the same, the composition comprising an antimony compound which can be effectively used as a precursor of an antimony-containing thin film. The antimony compound according to one embodiment is in a liquid state at room temperature, and thus has excellent storability and handling properties and high reactivity, thereby being capable of effectively forming a metal thin film.

The present application relates to triethyl antimony processing technical field, especially in kind of preparation triethyl antimony, including the following steps: under the protection of inert gas to the reaction bottle raw material antimony trichloride and ether solvent is added, and the atmospheric pressure reflux device is installed, and the stirring is started;Ethyl lithium ether solution is added dropwise to the reaction bottle, after dropwise addition is completed, 70~80 ℃ stirring reaction is kept for 3~6h;After the stirring reflux is finished, the solvent ether is distilled out first, and the triethyl antimony initial product is obtained;The vacuum distillation device is installed, and the triethyl antimony crude product is obtained by vacuum distillation;The obtained triethyl antimony crude product is subjected to twice vacuum rectification, and high-purity triethyl antimony is obtained, and the purity reaches 6N by nuclear magnetic resonance, ICP detection.Pure triethyl antimony is generated by the reaction of ethyl lithium and antimony trichloride under the protection of inert gas, the preparation method is safe and efficient, simple operation, raw material is easy to obtain, no by-product, high yield and high purity product.

Disclosed are a semiconductor photoresist composition and a method of forming or providing a pattern using the same. The semiconductor photoresist composition may include an organometallic compound; a polymer additive including a structural unit represented by Chemical Formula 1; and a solvent.

To provide a method and a compound useful for depositing a metal and a metal-containing layer in a gas phase.SOLUTION: The invention relates to the use of a metal complex, which has at least one ligand of the formula R1-N3-R2, wherein R1 and R2 are hydrocarbon moieties, for depositing the metal or a compound of the metal from the gas phase. The invention further relates to methods for depositing metals from the metal complexes, and to metal complexes, substituted triazene compounds and methods for the production thereof.SELECTED DRAWING: Figure 14

The present invention belongs to the field of preparation and application of metal materials and relates to a class of Cl / Br halogen-doped ionic antimony complexes and their preparation methods and applications. The general structural formula of the complex is shown below: #imgabs0#, wherein R is methyl, ethyl, n-propyl or n-butyl; and x=0, 1, 2, 3, 4 or 5. The preparation method comprises the following steps: adding a benzylamine salt and antimony trichloride or antimony tribromide to a solvent in a molar ratio, reacting the mixture, and using ether as a reverse solvent to obtain a single crystal of the target product; or adding a benzylamine salt and antimony trichloride or antimony tribromide to a solvent in a molar ratio, and heating the mixture to obtain a single crystal of the target product. The luminescence properties of the material can be controlled by varying the halogen type or organic cation in the complex. Due to the advantages of the antimony complex, such as high stability, simple preparation, and high-efficiency, short-life luminescence, the ionic antimony complex has a wide range of uses and can be applied to fields such as X-ray imaging and lighting displays.

The invention discloses a nitrogen-assisted organic antimony compound Sb-3 and a synthesis method and application thereof.The compound Sb-3 releases non-activated 1-degree / 2-degree alkyl free radicals under the visible light oxidation-reduction condition, and nitrogen atoms in an antimony framework are achieved at the same time through the donor-acceptor effect: (i) the high stability to air and moisture (H-NMR is not changed after the nitrogen-assisted organic antimony compound is exposed for 1.5 years at the room temperature); (ii) the oxidation potential is reduced to + 0.51-+ 0.63 VvsSCE, so that the excited-state photocatalyst (4CzIPN and the like) can realize SET oxidation, and then a C (sp)-Sb bond is broken through an N-Sb electron relay mechanism to generate an alkyl radical. The free radical can be subjected to Giese addition with electron-deficient olefin / alkyne, can be subjected to Ni / photooxidation reduction cross coupling with aryl halide, and can participate in three-component olefin / alkyne-aryl-alkyl conjugate addition, so that high-region and stereoselective synthesis of trisubstituted olefin is realized.

The invention relates to the field of synthesis of lipid fluorescent dyes, and discloses an S-configuration 2, 2-disubstituted oxoindole compound as well as a preparation method and application thereof, and the specific preparation process is as follows: taking a compound A as a raw material, and carrying out nucleophilic substitution reaction to obtain a compound B; cyclizing the compound B under an alkaline condition to obtain an oxoindole compound C; carrying out Mitsunobu reaction on the compound C and a benzyl alcohol substrate to obtain a compound D; performing nucleophilic substitution reaction on the compound D to obtain a compound E; preparing a catalyst Cu (SbF6) 2 / BOX; a compound F is obtained from the compound E under the action of a catalyst Cu (SbF6) 2 / BOX. According to the method disclosed by the invention, the lipid fluorescent dye which is more stable, has specificity and low toxicity is obtained by catalyzing the asymmetric reaction, and the method is simple in synthesis, low in cost and high in yield and has a better application prospect.

The present invention provides a method of producing a thin-film and a thin-film forming raw material for forming a bismuth metal thin-film or an antimony metal thin-film by using a compound represented by the following general formula (1) and a compound represented by the following general formula (2). In the general formula (1), M1 represents trivalent bismuth or trivalent antimony. In the general formula (2), M2 represents trivalent bismuth or trivalent antimony, and L1, L2, and L3 each independently represent an alkyl group having 1 or more and 10 or less carbon atoms, a halogen atom, an alkoxy group having 1 or more and 10 or less carbon atoms, or a group represented by the following general formula (3), provided that M1 and M2 represent the same metal atom. In the general formula (3), R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 or more and 10 or less carbon atoms, or -SiR3R4R5, R3, R4, and R5 each independently represent an alkyl group having 1 or more and 10 or less carbon atoms, and * represents a bonding site with M2.

The invention provides a triazine-ring-containing metal ion complex, a preparation method and application of the triazine-ring-containing metal ion complex as a flame retardant, a triazine-ring-containing compound and a metal compound are subjected to a reaction, the triazine-ring-containing metal ion complex is prepared through a simple and controllable technology, and the complex is independently used as the flame retardant or used in cooperation with a halogen flame retardant. The flame retardant is used for flame retardance of high polymer materials, has the same flame retardant effect as antimony trioxide after being added into formulas of plastics and rubber, and is pollution-free, safe and controllable in the production process.

The invention discloses an organic-inorganic hybrid antimony halide and a preparation method and application thereof, and relates to the field of luminescent materials, the preparation method comprises the following steps: grinding and mixing an antimony-based compound and an organic ligand to obtain the manganese-doped organic-inorganic hybrid antimony halide, a is any one of pyridine, imidazole, piperidine, pyrazine, triphenylphosphine, a pyridine derivative, an imidazole derivative, a piperidine derivative, a pyrazine derivative and a triphenylphosphine derivative; the antimony-based compound is an antimony compound, or the antimony-based compound comprises an antimony compound and a manganese compound; the chemical formula of the organic and inorganic hybrid antimony halide is AaSbXb or AaSbXb: Mn, and X is any one of Cl, Br and I. The target product can be prepared only by grinding and mixing the raw materials of the antimony-based compound and the organic ligand, the process is simple and controllable, the operation is convenient and fast, the method is suitable for large-scale preparation, and a foundation is laid for industrial application of the organic-inorganic hybrid antimony halide.

A semiconductor photoresist composition and a method of forming or providing patterns using the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include an organometallic compound; a polymer additive including a structural unit represented by Chemical Formula 1; and a solvent.