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Preparation method for cadmium supported bismuth telluride nanowires

A technology of bismuth telluride nanometer and tellurium nanowire, which is applied in the direction of chemical instruments and methods, nanotechnology, selenium/tellurium compound, etc. It can solve the problems of complicated use, achieve uniform heating, simple test process, and easy large-scale effects

Inactive Publication Date: 2019-03-15
韩金玲
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since this method requires the use of complex CVD systems, it is only suitable for laboratory needs

Method used

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  • Preparation method for cadmium supported bismuth telluride nanowires
  • Preparation method for cadmium supported bismuth telluride nanowires
  • Preparation method for cadmium supported bismuth telluride nanowires

Examples

Experimental program
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Effect test

Embodiment 1

[0026] First, take 80mL of tellurium nanowires prepared in advance, then add 0.52g of bismuth nitrate, stir evenly, then add 0.4mL of hydrazine hydrate to the mixed solution, and adjust the pH of the solution to 8 with sodium hydroxide, and then mix the The solution was transferred to a hydrothermal reactor and reacted at 160°C for 10 h. After the reaction, the reactor was obtained and the bismuth telluride nanowires were washed by centrifugation; secondly, the obtained bismuth telluride nanowires were dispersed in ethylene glycol, The concentration of the solution is 0.1mg / mL. After the dispersion is uniform, add chromium chloride and 1mL sodium citrate solution; finally, transfer the mixed solution to an Erlenmeyer flask, and use a sealing film to seal it against oxygen, and place it on a shaker. Adjust the temperature of the shaking table to 60°C and the speed to 190rpm after the middle and back, and keep it for 8h. After the reaction, the product was washed with deionized ...

Embodiment 2

[0028] First, take 80mL of tellurium nanowires prepared in advance, then add 0.52g of bismuth nitrate, stir evenly, then add 0.4mL of hydrazine hydrate to the mixed solution, and adjust the pH of the solution to 8 with sodium hydroxide, and then mix the The solution was transferred to a hydrothermal reactor and reacted at 180°C for 8 hours. After the reaction, the reactor was taken out and the bismuth telluride nanowires were washed by centrifugation; secondly, the obtained bismuth telluride nanowires were dispersed in ethylene glycol, The concentration of the solution is 0.1mg / mL. After the dispersion is uniform, add chromium chloride and 1mL sodium citrate solution; finally, transfer the mixed solution to an Erlenmeyer flask, and use a sealing film to seal it against oxygen, and place it on a shaker. Adjust the temperature of the shaking table to 60°C and the speed to 190rpm after the middle and back, and keep it for 8h. After the reaction, the product was washed with deioni...

Embodiment 3

[0030] First, take 80mL of tellurium nanowires prepared in advance, then add 0.52g of bismuth nitrate, stir evenly, then add 0.4mL of hydrazine hydrate to the mixed solution, and adjust the pH of the solution to 8 with sodium hydroxide, and then mix the The solution was transferred to a hydrothermal reactor and reacted at 180°C for 8 hours. After the reaction, the reactor was taken out and the bismuth telluride nanowires were washed by centrifugation; secondly, the obtained bismuth telluride nanowires were dispersed in ethylene glycol, The concentration of the solution is 0.1mg / mL. After the dispersion is uniform, add chromium chloride and 1mL sodium citrate solution; finally, transfer the mixed solution to an Erlenmeyer flask, and use a sealing film to seal it against oxygen, and place it on a shaker. Adjust the temperature of the shaker to 80°C and the speed to 160rpm, and keep it for 7h. After the reaction, the product was washed with deionized water and ethanol.

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Abstract

The invention aims to provide a simple preparation method for cadmium supported bismuth telluride nanowires with high thermoelectric conversion efficiency by screening. The method has the characteristics of short preparation time, simple process and large-scale production. The preparation method of the cadmium loaded bismuth telluride nanowires comprises the following steps: step 1, preparing tellurium nanowires; step 2, taking tellurium nanowires as a template agent, adding a bismuth source, and performing reaction under the hydrothermal condition to prepare the bismuth telluride nanowires; step 3, separating and washing the bismuth telluride nanowires prepared in the step 2, adding a cadmium source to a shaking table as a reaction container for cadmium support to obtain the final cadmiumsupported bismuth telluride nanowires.

Description

technical field [0001] The invention relates to the technical field of thermoelectric material preparation, in particular to a bismuth telluride nanowire thermoelectric material, especially the preparation field of bismuth telluride nanowires loaded with cadmium. Background technique [0002] Thermoelectric material refers to a kind of semiconductor material that can realize mutual conversion of thermal energy and electrical energy, which has attracted great attention in recent years. Since thermoelectric materials have no special restrictions on the sources of heat sources they utilize, they have a wide range of applications. For example, the waste heat in the factory can be converted into electric energy, thereby realizing the effective utilization of energy; for example, natural solar energy can be directly used, which are all good sources of heat. However, the current thermoelectric materials have low conversion efficiency to heat energy, which greatly limits the wide a...

Claims

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Application Information

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IPC IPC(8): C01B19/00B82Y40/00
CPCC01B19/007B82Y40/00C01P2002/72C01P2004/04C01P2004/16
Inventor 韩金玲代超张亮
Owner 韩金玲
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