Novel compound semiconductor and usage for same
一种半导体、化合物的技术,应用在新型化合物半导体材料领域
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[0066] Prepare 0.1727g In, 1.3121g Co, 8.1329g Sb, 0.2375g Se and 0.1449g Co 3 o 4 As a reagent, and use a mortar and mortar for mixing. The material mixed as above was put into a quartz tube and vacuum-sealed, then heated at 650 °C for 36 hours. The time taken to raise the temperature to 650°C was 1 hour and 30 minutes, and In 0.25 co 4 Sb 11 o 0.5 Se 0.5 powder.
[0067] Part of the composite material produced above was formed into a disk having a diameter of 10 mm and a thickness of 1 mm. Thereafter, a pressure of 200 MPa was applied to the disk using CIP (cold isostatic pressing). Next, the resulting product was put into a quartz tube and vacuum sintered for 12 hours.
[0068] For the sintered discs, thermal conductivity (κ) was measured at pre-set temperature intervals using LFA457 (Netzsch, Inc). The measurement results are shown as examples in figure 1 middle.
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