Novel compound semiconductor and usage for same

一种半导体、化合物的技术，应用在新型化合物半导体材料领域

Active Publication Date: 2014-01-08
LG CHEM LTD
View PDF8 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, many conventional compound semiconductors cannot satisfy all these conditions simultaneously

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel compound semiconductor and usage for same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0066] Prepare 0.1727g In, 1.3121g Co, 8.1329g Sb, 0.2375g Se and 0.1449g Co 3 o 4 As a reagent, and use a mortar and mortar for mixing. The material mixed as above was put into a quartz tube and vacuum-sealed, then heated at 650 °C for 36 hours. The time taken to raise the temperature to 650°C was 1 hour and 30 minutes, and In 0.25 co 4 Sb 11 o 0.5 Se 0.5 powder.

[0067] Part of the composite material produced above was formed into a disk having a diameter of 10 mm and a thickness of 1 mm. Thereafter, a pressure of 200 MPa was applied to the disk using CIP (cold isostatic pressing). Next, the resulting product was put into a quartz tube and vacuum sintered for 12 hours.

[0068] For the sintered discs, thermal conductivity (κ) was measured at pre-set temperature intervals using LFA457 (Netzsch, Inc). The measurement results are shown as examples in figure 1 middle.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-n-zQ'nSez, where Q' is at least one selected from the group consisting of O and S, 0<x@0.5, 0<n@2 and 0@z<2.

Description

technical field [0001] The present disclosure relates to a novel compound semiconductor material that can be used in solar cells or as a thermoelectric material, as well as the preparation method and use of the material. [0002] This application claims Korean Patent Application No. 10-2011-0045348 filed on May 13, 2011 in Korea, Korean Patent Application No. 10-2011-0045349 filed on May 13, 2011 and Korean Patent Application No. 10-2011-0045349 filed on May 13, 2011 and Korean Patent Application No. 10-2011-0049609 filed on May 11, 2012 and Korean Patent Application No. 10-2012-0050259 filed on May 11, 2012, the entire contents of these four patent applications are incorporated herein by reference middle. Background technique [0003] A compound semiconductor is not a single element such as silicon and germanium, but a compound containing two or more composite elements serving as semiconductors. Various compound semiconductors have been developed and used in many fields. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C01G15/00C01G51/00C01G30/00H01L31/032
CPCC01B19/002C01G51/006H01L35/18C01P2006/40H01L31/032C01P2002/54H10N10/853C01B19/00C01G15/00C01G51/00C01G30/00
Inventor 朴哲凞金兑训
Owner LG CHEM LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap