Manufacturing method of nanometer hexagonal sheet-shaped bismuth telluride thermoelectric material

A hexagonal flake, thermoelectric material technology, applied in nanotechnology, nanotechnology, binary selenium/tellurium compounds, etc., can solve the problems of high cost, uncontrollable product shape, many process links, etc. Thermoelectric effect, good thermoelectric performance

Active Publication Date: 2014-07-09
DONGFENG COMML VEHICLE CO LTD
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to overcome the defects and problems of many process links, high cost, and uncontrollable product shape in the prior art, and provide a nano-scale hexagon with less process links, low cost, and controllable product shape. Fabrication method of flake bismuth telluride thermoelectric material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of nanometer hexagonal sheet-shaped bismuth telluride thermoelectric material
  • Manufacturing method of nanometer hexagonal sheet-shaped bismuth telluride thermoelectric material
  • Manufacturing method of nanometer hexagonal sheet-shaped bismuth telluride thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0040] The invention provides a method for preparing nanoscale hexagonal flake Bi 2 Te 3 The synthetic method belongs to the solvothermal synthesis method. Solvothermal synthesis is a method of reacting raw materials in a closed reaction system with an organic solvent as a medium at a certain temperature and the autogenous pressure of the solvent to synthesize a compound that is difficult to form under normal reaction conditions. The method has the advantages of low reaction temperature, short time, high product purity, controllable shape and size, and the like.

[0041] 1. Tellurium bismuth mixing process:

[0042] The organic solvent in this process is necessary for the solvothermal synthesis method, and its main function is to provide a solvent and a reducing environment. The organic solvent is diethylene glycol (DEG) or triethylene glycol (Triethylene glycol), among which, triethylene glycol is suitable for a higher temperature range.

[0043] The dosage ratio of mixtu...

Embodiment 1

[0059] see image 3 , a method for manufacturing a nanoscale hexagonal bismuth telluride thermoelectric material, the method includes the following steps in sequence:

[0060] Tellurium-bismuth mixing process: first use an electronic balance to weigh and analyze pure bismuth-containing compounds and tellurium-containing compounds and mix them to obtain a mixture. The molar ratio of elements Bi and Te in the mixture is 2:3, and then dissolve the mixture into In an organic solvent to obtain a mixed solution, the amount ratio of the mixing material and the organic solvent is 0.2-0.4mol: 1L; the bismuth-containing compound is 99% Bi(NO 3 ) 3 , the tellurium-containing compound is K with a concentration of 98% by mass 2 TeO 3 ; The organic solvent is diethylene glycol or triethylene glycol;

[0061] Adjustment process: first add NaOH to the above mixed solution to make the pH of the mixed solution 11–13, and then add polyvinylpyrrolidone of the same quality as NaOH to obtain th...

Embodiment 2

[0066] The basic content is the same as that of Example 1, except that the temperature of the heat preservation is 240° C., and the time of heat preservation is 6 hours.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A manufacturing method of a nanometer hexagonal sheet-shaped bismuth telluride thermoelectric material orderly comprises: a tellurium bismuth mixing process, an adjusting process, a sealing heating stirring process, and a purification process. The tellurium bismuth mixing process comprises: preparing a mixture of Bi and Te with a mol ratio of 2:3, and dissolving the mixture in an organic solvent to obtain a mixed solution; the adjusting process comprises: adding NaOH and polyvinylpyrrolidone to adjust the shape and size of the product; the sealing heating stirring process comprises: heating and performing heat insulation of the product under a sealing and stirring condition; the purification process comprises: purifying the product by centrifugation, cleaning, and drying. The design of the invention not only prepares the nanometer hexagonal sheet-shaped bismuth telluride thermoelectric material with a controllable product shape, but also is few in process links, short in period, low in energy consumption, and low in cost.

Description

technical field [0001] The invention relates to a nano-scale hexagonal sheet structure bismuth telluride-Bi 2 Te 3 The method for synthesizing thermoelectric materials belongs to the field of material synthesis, and is specifically suitable for providing a bismuth telluride-Bi 2 Te 3 Method for making thermoelectric materials. Background technique [0002] Thermoelectric materials are advanced materials that can statically realize the mutual conversion of thermal energy and electrical energy through the movement of carriers. With the improvement of people's awareness of environmental protection and energy saving, there are more and more researches related to thermoelectric materials. Bi 2 Te 3 Compounds are currently one of the most mature commercial thermoelectric materials, especially in the range from 200°C to room temperature, they are the thermoelectric materials with the best performance, but their maximum ZT has been hovering around 1. The refrigeration efficie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y30/00B82Y40/00
Inventor 王自昱杨帆刘立炳
Owner DONGFENG COMML VEHICLE CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap