The application discloses a kind of MEMS device architecture, including cap layer, device layer and substrate layer, cap layer and device layer are bonded, the whole after bonding is bonded with substrate layer, cap layer is manufactured based on first
silicon substrate, cavity structure is provided at the bottom of cap layer, high-depth groove structure is provided in cap layer, groove wall of high-depth groove structure is provided with
silicon dioxide film, high-depth groove structure is filled with
polycrystalline silicon and deposited, the upper surface of first
silicon substrate is provided with
silicon dioxide layer;Device layer is made based on SOI
wafer, including the first silicon structure layer consisting of top layer silicon,
buried oxide layer and the second silicon structure layer consisting of back substrate silicon;Substrate layer includes second silicon substrate, bottom cavity is provided on the top surface of second silicon substrate, exhaust hole is opened on the bottom surface of second silicon substrate.The application combines deep groove
etching,
polycrystalline silicon slot filling and bonding technology, utilizes
advanced materials such as SOI
wafer and
polyimide layer, and realizes excellent
signal isolation and flexibility of various
MEMS IMU applications.