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Method and equipment for cutting large-diameter silicon carbide single crystals by aid of diamond wires

A silicon carbide single crystal and diamond cutting wire technology, applied in stone processing equipment, fine working devices, manufacturing tools, etc., can solve the problems of large damage layer on the surface of the wafer, low production efficiency, and inability to meet high-efficiency production. Efficient cutting and easy operation

Active Publication Date: 2014-04-16
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For inner circle cutting, the surface damage layer of the cut wafer is large, the knife edge is wide, and the material loss is large, and only one piece can be cut at a time, and the production efficiency is low
Although the diamond single-wire cutting machine overcomes most of the shortcomings of the above cutting, it only cuts one piece at a time like the inner circle cutting machine, so the existing cutting technology and equipment cannot meet the requirements of high-efficiency production

Method used

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  • Method and equipment for cutting large-diameter silicon carbide single crystals by aid of diamond wires
  • Method and equipment for cutting large-diameter silicon carbide single crystals by aid of diamond wires
  • Method and equipment for cutting large-diameter silicon carbide single crystals by aid of diamond wires

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] The multi-wire cutting machine adopts an electroplated diamond cutting wire with a diameter of 400 μm, and utilizes the reciprocating high-speed cutting motion of the electroplated diamond wire to efficiently cut 2-inch SiC crystal rods;

[0053] The diamond cutting wire has an electroplated diamond particle size of 40-50 μm;

[0054] The substrate of the diamond cutting wire is high carbon steel wire with a diameter of 300 μm;

[0055] The swing angle is 0°;

[0056] The angle of the large-diameter SiC crystal is 0°

[0057] The specific cutting steps are as follows:

[0058] (1) Winding: the diamond cutting wire is equidistantly wound on the sheave, and a parallel wire network with uniform tension distribution is formed on the upper and lower sides of the sheave;

[0059] (2) Install the SiC crystal to be cut: fix the 2-inch SiC crystal rod to be cut on the workbench;

[0060] (3) Set the process parameters: set the running speed of the cutting line to 1100m / min a...

Embodiment 2

[0065] The multi-wire cutting machine uses an electroplated diamond cutting wire with a diameter of 150 μm, and utilizes the reciprocating high-speed cutting motion of the electroplated diamond wire to efficiently cut 2-inch SiC crystal rods.

[0066] The diamond cutting wire has an electroplated diamond particle size of 20-25 μm;

[0067] The substrate of the diamond cutting wire is high carbon steel wire with a diameter of 100 μm;

[0068] The swing angle is 5°;

[0069] The angle of the large-diameter SiC crystal is 0°

[0070] The specific cutting steps are as follows:

[0071] (1) Winding: the diamond cutting wire is equidistantly wound on the sheave, and a parallel wire network with uniform tension distribution is formed on the upper and lower sides of the sheave;

[0072] (2) Install the SiC crystal to be cut: fix the 2-inch SiC crystal rod to be cut on the workbench;

[0073] (3) Set the process parameters: set the running speed of the cutting line to 800m / min and ...

Embodiment 3

[0078] The multi-wire cutting machine adopts an electroplated diamond cutting wire with a diameter of 200 μm, and utilizes the reciprocating high-speed cutting motion of the electroplated diamond wire to efficiently cut 3-inch SiC crystal rods;

[0079] The diamond cutting wire has an electroplated diamond particle size of 25-30 μm;

[0080] The substrate of the diamond cutting wire is high carbon steel wire with a diameter of 150 μm;

[0081] The swing angle is 10°;

[0082] The angle of the large-diameter SiC crystal is 0°

[0083] The specific cutting steps are as follows:

[0084] (1) Winding: the diamond cutting wire is equidistantly wound on the sheave, and a parallel wire network with uniform tension distribution is formed on the upper and lower sides of the sheave;

[0085] (2) Install the SiC crystal to be cut: fix the 3-inch SiC crystal rod to be cut on the workbench;

[0086] (3) Set the process parameters: set the running speed of the cutting line to 900m / min a...

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Abstract

The invention belongs to the field of technologies for processing advanced materials, and particularly provides a method and equipment for efficiently cutting large-diameter single crystals by the aid of diamond wires. The method and the equipment have the advantages that the equipment is convenient to operate and is provided with a multi-wire cutting machine and the diamond cutting wires, the diameters of the diamond cutting wires range from 120 micrometers to 400 micrometers, diamond particles are plated on outer layers of the diamond cutting wires, multiple pieces of large-diameter SiC crystal bars can be cut by the aid of reciprocating high-speed cutting movement of the diamond cutting wires, the surface roughness, the bending and the total thicknesses of cut SiC wafers hardly vary, and a plurality of target crystals can be cut in each procedure; the crystal can be cut at high speeds, crystal cutting elapsed time is short, and accordingly the silicon carbide wafers can be efficiently cut by the aid of the method and the equipment.

Description

technical field [0001] The invention belongs to the field of crystal material processing, and in particular relates to a method and equipment for efficiently cutting a large-diameter silicon carbide single crystal by using a diamond wire. Background technique [0002] Silicon carbide (SiC) semiconductor material is the third-generation wide-bandgap semiconductor material developed from the first-generation semiconductor material Si and the second-generation compound semiconductor materials GaAs, GaP, InP, etc. The main characteristics of SiC materials include wide band gap, high critical breakdown electric field, high thermal conductivity, and high carrier saturation drift velocity. It has great application potential in high temperature, high frequency, high power, optoelectronics and radiation resistance. Many countries A large amount of money has been invested in extensive and in-depth research on SiC, and breakthroughs have been made in SiC crystal growth technology, key ...

Claims

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Application Information

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IPC IPC(8): B28D5/04
Inventor 高玉强宗艳民张志海梁庆瑞孙世斌张红岩
Owner SICC CO LTD
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