Preparation method and application of nanoimprint template

A technology of nanoimprinting and stencil, which is applied in the field of preparation of nanowires or nanotubes and templates for nanoimprinting, which can solve the problem of affecting the quality of nanostructures, increasing product costs, and reducing the stability of nanostructures. and performance reliability issues, to achieve the effect of reducing the preparation cost and instrument price

Inactive Publication Date: 2012-05-02
BEIHANG UNIV
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, one of the biggest disadvantages of this type of technology is that after the use of template technology to prepare nanomaterials and their arrays, these templates generally need to be removed (that is, the template is disposable), which not only affects the quality of the nanostructure, but also cannot use the same template. The template is copied in batches, which increases the cost of the product and reduces the stability of the product's nanostructure and the reliability of its performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of nanoimprint template
  • Preparation method and application of nanoimprint template
  • Preparation method and application of nanoimprint template

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Porous nano-alumina template A is used, and the specific size of the template A is as follows: the substrate is aluminum with a thickness c=1 μm; the shape of the nanohole is circular, the aperture size d=5nm, the hole spacing s=7.5nm, and the hole depth a is 10nm , The thickness of the barrier layer at the bottom of the hole b=1nm. The specific steps of using it to prepare a template for nanoimprinting are as follows:

[0058] Step 1: Using the copper target as the filling material, deposit copper atoms into the pores of the porous nano-alumina template A by magnetron sputtering at a sputtering rate of 1nm / min, and fill it into a nanometer with a spherical or ellipsoidal head. The radius of curvature of the column, spherical or ellipsoidal head is 3 nanometers; continue to deposit a copper surface support layer with a thickness of 0.5 μm on the upper surface (opening direction) of the porous nano-alumina template A.

[0059] Step 2: Coating a copper transition layer w...

Embodiment 2

[0063] Porous nano-alumina is used as the template B, and the specific size of the template B is as follows: the shape of the nanopore is circular, the aperture size d=13nm, the hole spacing s=6.5nm, and the hole depth a=500nm. The specific steps of using it to prepare a template for nanoimprinting are as follows:

[0064] Step 1: By magnetron sputtering, using titanium as the target material, at a sputtering rate of 10nm / min, deposit titanium into the porous nano-alumina template B to form a nano-column with a ring-shaped head. The column height g is 100nm, the ring wall thickness t of the annular structure is 3 nanometers, and the depth h is 5nm; continue to deposit on the upper surface (opening direction) of the porous nano-alumina template B to form a titanium surface support layer with a thickness m of 1 μm .

[0065] Step 2: On another quartz substrate with a thickness of 1 mm, a titanium transition layer with a thickness of about 10 nm is coated with the same material ...

Embodiment 3

[0069] GaAs nanowires were prepared on a silicon substrate by using the template for nanoimprinting with a nanocolumn structure diameter of 5 nm and a height of 10 nm prepared in Example 1. The specific steps are as follows: first, the silicon substrate is washed with 30% HF solution, rinsed with ultrapure water, and dried with argon. Then rotate the surface at 5000 revolutions per minute (rpm) for 30 seconds, spin-coat a layer of photosensitive resin (Shipley 1813) with a thickness of 10-15 nanometers, and bake at 80°C for 10-30 seconds to make it semi-cured. Next, the stencil for nanoimprint prepared in Example 1 was placed on it, and 20 N / cm 2 Then, after baking at 110°C for 60 seconds, the template for nanoimprinting was removed, and then baked at 110°C for 60 seconds to fully cure. Afterwards, it was placed in a reactive ion beam cleaner at 100°C with 20 sccm (cm 3 / min, at 20°C and 1 atmosphere) the oxygen plasma flow will wash the residual resin at the bottom of the p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method and application of a nanoimprint template and belongs to the technical field of processing of advanced materials and nano structures. The preparation method of the nanoimprint template comprises the following steps: preparing a nano post and a surface supporting layer; preparing a transition layer on another substrate; firmly bonding the transition layer and the surface supporting layer; and etching off a porous nano aluminum oxide template, thus forming the nanoimprint template with a regular and protruded nano post structure. The characteristic dimension of the nanoimprint template can be as small as 5 nanometers; and the template can be used for preparing large-area defect-free regularly arrayed nano wires or nano tubes with different cross-sectional shapes in batches at low cost.

Description

technical field [0001] The invention belongs to the technical field of advanced materials and nanostructure processing, and specifically relates to a method for preparing a template for nanoimprinting and its application. The application specifically refers to the preparation of nanowires or nanotubes using the template for nanoimprinting Methods. Background technique [0002] Nanoscale materials have unique optical, electrical, magnetic, catalytic and other physical and chemical properties. In order to make full use of the nanoscale quantum effect and its coupling effect to improve various physical and chemical properties of nanomaterials and stimulate new properties, the size of nanomaterials must be small to a certain extent, such as smaller than the wavelength of electromagnetic waves or less than 100 nanometers, and form an effective sequenced array. However, the preparation of such nanomaterials and their arrays with controllable size and spatial arrangement is still...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00G03F7/00
Inventor 宋玉军
Owner BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap