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Thermoelectric thin film with chemical composition of Mg3.2Bi1.5Sb0.5 and preparation method thereof

A thermoelectric thin film, chemical composition technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problems of low energy conversion efficiency of thermoelectric materials, inability to realize wide application of thermoelectric materials, etc., to achieve good energy Conversion capacity, thermoelectric performance increase, effect of improving power factor

Active Publication Date: 2020-06-30
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, commercialized thermoelectric materials are mainly bismuth telluride-based inorganic bulk materials, due to their high thermal conductivity (1-3W·m -1 ·K -1 ), resulting in a low room temperature ZT value, and its corresponding energy conversion efficiency is 10%, while the energy conversion efficiency of modern household refrigerators needs to reach 40%
Compared with traditional compressor refrigeration or steam heat recovery systems, the energy conversion efficiency of existing thermoelectric materials is not high. In the field of large-scale industrial waste heat recovery or large-scale household or industrial refrigeration, thermoelectric materials cannot be widely used.

Method used

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  • Thermoelectric thin film with chemical composition of Mg3.2Bi1.5Sb0.5 and preparation method thereof
  • Thermoelectric thin film with chemical composition of Mg3.2Bi1.5Sb0.5 and preparation method thereof
  • Thermoelectric thin film with chemical composition of Mg3.2Bi1.5Sb0.5 and preparation method thereof

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preparation example Construction

[0028] The invention provides a chemical composition of Mg 3.2 Bi 1.5 Sb 0.5 The preparation method of the thermoelectric thin film, comprises the following steps:

[0029] (1) Mix metal Mg, Bi and Sb according to the molar ratio of Mg:Bi:Sb=3.05~3.3:1.5:0.5, and perform ball milling and hot pressing in sequence to obtain Mg 3.2 Bi 1.5 Sb 0.5 alloy target;

[0030](2) the Mg 3.2 Bi 1.5 Sb 0.5 Alloy Target Vacuum Magnetron Sputtering on c-axis Oriented LaAlO 3 On the surface of a single crystal substrate, a magnetron sputtering film is obtained;

[0031] (3) the magnetron sputtering film is annealed and heat-treated to obtain Mg 3.2 Bi 1.5 Sb 0.5 thermoelectric film.

[0032] In the present invention, metal Mg, Bi and Sb are mixed according to the molar ratio of Mg:Bi:Sb=3.05~3.3:1.5:0.5, followed by ball milling and hot pressing to obtain Mg 3.2 Bi 1.5 Sb 0.5 alloy target. In the present invention, the purity of said metals Mg, Bi and Sb is independently prefe...

Embodiment 1

[0051] (1) According to the molar ratio of Mg:Bi:Sb=3.05:1.5:0.5, metal Mg, Bi and Sb with a purity of 99.999% are placed in a stainless steel ball mill jar, and ball milled for 12 hours. Under the conditions of hot pressing for 10min, Mg 3.2 Bi 1.5 Sb 0.5 Alloy target, and put Mg 3.2 Bi 1.5 Sb 0.5 The alloy target is installed in the vacuum chamber of the magnetron sputtering equipment;

[0052] (2) Orienting the c-axis to LaAlO 3 (LAO) single crystal was soaked in a mixed solution containing concentrated sulfuric acid (98% by mass fraction) and hydrogen peroxide (20% by mass fraction) at a volume ratio of 1:3 for 20 min, and then placed in a beaker filled with acetone, alcohol In the beaker and the beaker of ultrapure water, respectively, ultrasonically clean it at 50W power for 10 minutes, and then blow dry the LAO single crystal with high-purity nitrogen;

[0053] (3) Install the cleaned LAO single crystal in the vacuum chamber of the vacuum magnetron sputtering dev...

Embodiment 2

[0060] (1) According to the molar ratio of Mg:Bi:Sb=3.2:1.5:0.5, metal powders Mg, Bi and Sb with a purity of 99.999% are placed in a stainless steel ball mill jar, and ball milled for 16 hours. Hot pressing at ℃ for 20min to obtain Mg 3.2 Bi 1.5 Sb 0.5 Alloy target, and put Mg 3.2 Bi 1.5 Sb 0.5 The alloy target is installed in the vacuum chamber of the magnetron sputtering equipment;

[0061] (2) Orienting the c-axis to LaAlO 3 (LAO) single crystal was soaked in a mixed solution containing concentrated sulfuric acid (98% by mass fraction) and hydrogen peroxide (20% by mass fraction) at a volume ratio of 1:3 for 25 min, and then placed in a beaker filled with acetone, alcohol In the beaker and the beaker of ultrapure water, respectively, ultrasonically clean it at 60W for 15 minutes, and then dry the LAO single crystal with high-purity nitrogen;

[0062] (3) Install the cleaned LAO single crystal in the vacuum chamber of the vacuum magnetron sputtering device, and bake ...

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Abstract

The invention provides a thermoelectric thin film with a chemical composition of Mg3.2Bi1.5Sb0.5 and a preparation method thereof, and belongs to the technical field of thermoelectric materials. The thermoelectric thin film is prepared by means of vacuum magnetron sputtering, and the obtained thermoelectric thin film has a two-dimensional spatial structure and is low in thermal conductivity; and meanwhile, the thin film structure can form a quantum confinement effect, thereby increasing the power factor of materials. According to the thermoelectric thin film with the chemical composition of Mg3.2Bi1.5Sb0.5, a c-axis oriented LaAlO3 single crystal is used as a substrate of vacuum magnetron sputtering, the c-axis oriented LaAlO3 single crystal has a very high lattice matching degree with Mg3.2Bi1.5Sb0.5, the preferential growth of the thermoelectric thin film in the c-axis direction can be induced, and finally, the carrier mobility of the thermoelectric thin film is greatly increased andthe thermoelectric performance of the thermoelectric thin film is further greatly increased. A Mg3.2Bi1.5Sb0.5 alloy target is prepared by ball milling and then hot pressing, the obtained alloy target is not prone to cracking in the magnetron sputtering process, and the deposited thin film is uniform in composition.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, in particular to a chemical composition of Mg 3.2 Bi 1.5 Sb 0.5 Thermoelectric thin film and its preparation method. Background technique [0002] Thermoelectric materials are green and environmentally friendly functional materials that can directly convert heat energy and electric energy. Vibration; (2) Environmentally friendly, no toxic and harmful emissions, and green cooling can be realized; (3) The structure of the device is simple and compact, and it is easy to miniaturize; (4) It is suitable for environments with harsh conditions such as outer space or remote areas . Based on this, in recent decades, thermoelectric materials have played an indispensable role in some special fields of miniaturization or miniaturization, such as electric drive devices for space satellites, refrigeration systems for car refrigerators, and micro medical devices. missing role. [0003] Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/34C23C14/18C23C14/58
CPCC23C14/35C23C14/185C23C14/5806C23C14/3414
Inventor 丁发柱古宏伟商红静黄大兴谢波玮高召顺李太广邹琪
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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