A bi2o2se-based thermoelectric material and its preparation method

A thermoelectric material and bulk material technology, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve the problems of high sintering energy consumption, long reaction time, and high difficulty in operation, and achieve short sintering time and improved ZT value. , the effect of obvious changes in performance

Active Publication Date: 2016-06-15
TSINGHUA UNIV
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  • Application Information

AI Technical Summary

Problems solved by technology

To sum up, hot press sintering synthesis has the disadvantages of long reaction time, high energy consumption for sintering, and high difficulty in operation.

Method used

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  • A bi2o2se-based thermoelectric material and its preparation method
  • A bi2o2se-based thermoelectric material and its preparation method
  • A bi2o2se-based thermoelectric material and its preparation method

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preparation example Construction

[0032] The invention provides a Bi 2 o 2 The preparation method of Se-based thermoelectric material comprises the following steps:

[0033] 1) First press Bi 2-x sn x o 2 The stoichiometric ratio of Se, when x=0, weigh Bi 2 o 3 , Bi and Se powder; when 02 o 3 , Bi, Se and SnO 2 powder;

[0034] 2) Mix the powders in step 1) and vacuum seal the tubes, encapsulate the powders in a vacuum quartz glass tube, and calcinate at 475°C to 525°C to complete the phase formation stage, and the calcining time is 6h to 24h;

[0035] 3) Put the calcined powder into a graphite mold, and sinter it into a bulk material with SPS discharge plasma after compaction. The sintering temperature is 525°C~575°C, and the heating rate of sintering is generally 119°C / min~131°C / min , the holding time is 5min~30min, and the sintering pressure is 30MPa~80MPa, that is, the required Bi 2 o 2 Se-based thermoelectric materials.

Embodiment 1

[0038] According to Bi 2 o 2 The ratio of Se, weigh Bi 2 o 3 , Bi and Se powders, after mixing, seal the tube in vacuum and then calcine, and sinter in air at 525°C for 24h to complete the phase formation stage of the material phase. Then crush, mix, and sinter in SPS discharge plasma sintering furnace at 575°C, the sintering pressure is 50MPa, the heating rate is 131°C / min, and the temperature is kept for 5min to obtain Bi 2 o 2 Se-based thermoelectric materials. It is characterized by figure 1 , 2 shows. Its ZT value can reach 0.065 at 500°C.

Embodiment 2

[0040] According to Bi 2 o 2 The ratio of Se, weigh Bi 2 o 3, Bi and Se powders, after mixing, seal the tube in vacuum and then calcine, and sinter in air at 500°C for 12 hours to complete the phase formation stage of the material phase. Then crush, mix, and sinter in SPS discharge plasma sintering furnace under the condition of 550°C, the sintering pressure is 80MPa, the heating rate is 125°C / min, and the temperature is kept for 15min to obtain Bi 2 o 2 Se-based thermoelectric materials. It is characterized by image 3 , 4 shows. Its ZT value can reach 0.054 at 500°C.

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Abstract

The invention belongs to the field of oxide ceramic materials and preparation methods thereof and particularly relates to a Bi2O2Se-based thermoelectric material and a preparation method thereof. The method comprises the steps of firstly, weighing Bi2O3 powder, Bi powder, Se powder and SnO2 powder according to the stoichiometric ratio: Bi2-xSnxO2Se (0<=x<=0.10), mixing, then, carrying out vacuum tube sealing, and calcining to finish a phase forming stage; and compacting the calcined powder, and sintering by using SPS discharge plasmas to obtain the pure-phase and Sn doped Bi2O2Se-based thermoelectric material. Compared with the traditional hot-pressed sintering method, the preparation method has the advantages of uniformity in heating, high heating speed, short sintering time and the like; the defects of long reaction time, high sintering energy consumption, high operation difficulty and the like in the prior art can be effectively overcome; and the performance of a sintered sample is obviously changed, and the ZT value of the Bi2O2Se-based thermoelectric material can be greatly increased after Sn is doped.

Description

technical field [0001] The invention belongs to the field of oxide ceramic materials and preparation thereof, in particular to a Bi 2 o 2 Se-based thermoelectric material and preparation method thereof. Background technique [0002] Thermoelectric material is a kind of functional material discovered very early, which can realize mutual conversion between heat energy and electric energy in a solid state with almost no moving parts. In recent years, with the aggravation of the energy crisis and the ensuing severe environmental problems, the research on thermoelectric materials has attracted more and more attention. Especially in the fields of exhaust gas circulation, waste heat recovery, and solar energy utilization, the use of thermoelectric materials can effectively improve the comprehensive utilization efficiency of energy. Thermoelectric materials can be used as carriers for mutual conversion between thermal energy and electric energy. Thermoelectric devices with them a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/00
CPCC01B19/002C01P2002/72C01P2004/03
Inventor 詹斌林元华
Owner TSINGHUA UNIV
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