88 results about "Tin selenide" patented technology

The invention discloses a tin selenide nano material, a preparation method and application thereof. Tin selenide is synthesized by utilizing a simple, mild and green method, further, hydrophilic ligands are modified in an ultrasonic method and tin selenide nano-sheets with good water dispersibility are synthesized. The nano material has strong near-infrared absorption property and is capable of converting effective near-infrared laser into thermal energy; the photo-thermal conversion efficiency is up to 29.8%; meanwhile, the nano material has good photo-thermal stability and can be applied to light-heat treatment for cancer cells. Meanwhile, the nano material has big specific surface area of a two-dimensional laminated structure and higher medicine-carrying capacity; the nano medicine complex is capable of realizing medicine release effects of pH value response and photo-thermal response and can be utilized as a medicine carrier for chemotherapy of cancer cells. The nano material can be applied to photoacoustic imaging and infrared thermal imaging and realizes photo-thermal and medicine integrated treatment of imaging guidance.

The invention provides a method for preparing a tin selenide photoelectric thin film material, belonging to the technical field of photoelectric thin film preparation. The method comprises the following steps: firstly washing a chip, then putting SnCl2.2H2O and SeO2 into solvents, obtaining a precursor thin film on the chip by a spin coating method and drying the precursor thin film, putting the precursor thin film into a closed container with diamide hydrate, ensuring the precursor thin film sample not to be contacted with diamide hydrate, heating the closed container filled with the precursor thin film sample, taking out the sample and cooling and drying the sample, thus obtaining the tin selenide photoelectric thin film. The method has the following beneficial effects: the method dispenses with the conditions of high temperature and high vacuum, has low requirements for apparatuses, is low in production cost and high in production efficiency and is easy to operate; the tin selenide photoelectric thin film has better continuity and uniformity; the components and structure of the target product are easy to control by the new process; and the production method which is low in cost and can realize industrialization is provided for preparing the tin selenide photoelectric thin film with high performance.

The invention discloses SnSe square nanosheets and a preparation method thereof, belonging to the technical field of preparation of nanometer materials. The preparation method comprises the following steps: uniformly mixing tin powder and selenium powder, and pressing into a pressing block; arranging the pressing block in a graphite pot, putting the graphite pot into a copper pan anode in a reaction chamber of a direct current arc discharge device, wherein a tungsten rod cathode is opposite to the copper pan anode; introducing circulating cooling water into the cooling wall; carrying out a discharge reaction in the mixed gas of argon and nitrogen, wherein the discharge voltage is 18V, the current is 80-85A, and reacting for 1-2 minutes; and passivating in an argon atmosphere, and collecting the ash black powder to serve as the SnSe square nanosheets on the inner side of the top cover of the condensation wall. The sample purity is high, the crystallinity is high, and the shape and size are uniform; any substrate, template and catalyst are not needed in the preparation process, and the method is environment-friendly; and the method is short in preparation time, low in energy consumption, low in cost and high in repeatability. The prepared product has potential application values in aspects such as solar cell conversion, holographic record and recycled lithium ion batteries.

The invention discloses a preparation method of an antimony selenide thin-film solar cell. The method comprises the steps: preparing a tin dioxide hydrocolloid dispersion liquid and a cadmium chlorideaqueous solution according to a certain mass ratio; sequentially preparing a tin dioxide electron transport layer and a cadmium chloride modification layer on clean patterned ITO conductive glass through a spin coating method, and performing drying and thermal treatment to obtain a substrate; putting antimony selenide powder and the substrate into a quartz tube, putting the quartz tube into an atmosphere furnace, performing vacuum pumping of the cavity, performing heating and heat preservation, opening an upper cover of the atmosphere furnace immediately after heat preservation is completed so that the cavity is rapidly cooled to the room temperature, taking out the substrate, and completing film deposition to obtain an antimony selenide film; finally, evaporating a layer of gold on the surface of the antimony selenide film through a vacuum thermal evaporation method to serve as a battery electrode, and obtaining an antimony selenide film solar cell. The method has the advantages that(1) the cadmium chloride solution is spin-coated to form the film as a modification layer, so a high-efficiency battery device is obtained; (2) the operation is simple, the thin film preparation process consumes less time, the efficiency is high, the requirement on the experimental environment is low, and the prepared battery device has stable performance.

The invention relates to a single-crystal tin selenide pyroelectric thin film and a preparing method thereof, and belongs to the field of pyroelectric materials. The preparing method of the single-crystal tin selenide pyroelectric thin film includes the following steps of taking a substrate, putting the substrate in cleaning liquid for ultrasonic cleaning for 20 minutes, drying the substrate for 2hours at 60-150 DEG C after cleaning, taking out the substrate to be naturally cooled, putting the processed substrate onto a spinner, dropwise adding dispersion liquid onto the surface of the substrate, conducting spinning for 10-60 seconds, taking out the substrate after spinning, drying the substrate for 5-10 minutes at 200 DEG C to obtain a buffering layer substrate, putting a tin selenide sputtering target material and the prepared buffering layer substrate into a high-vacuum multifunctional magnetron sputtering film coating instrument for vacuumizing, heating the buffering layer substrate, and introducing inert gas for sputtering for 20-60 minutes to obtain the single-crystal tin selenide pyroelectric thin film. The preparing method has the advantages that the preparing process is simple, and the prepared single-crystal tin selenide pyroelectric thin film is high in single crystallinity and power factor.

The invention discloses a tin selenide nano material, a preparation method and application thereof. Tin selenide is synthesized by utilizing a simple, mild and green method, further, hydrophilic ligands are modified in an ultrasonic method and tin selenide nano-sheets with good water dispersibility are synthesized. The nano material has strong near-infrared absorption property and is capable of converting effective near-infrared laser into thermal energy; the photo-thermal conversion efficiency is up to 29.8%; meanwhile, the nano material has good photo-thermal stability and can be applied to light-heat treatment for cancer cells. Meanwhile, the nano material has big specific surface area of a two-dimensional laminated structure and higher medicine-carrying capacity; the nano medicine complex is capable of realizing medicine release effects of pH value response and photo-thermal response and can be utilized as a medicine carrier for chemotherapy of cancer cells. The nano material can be applied to photoacoustic imaging and infrared thermal imaging and realizes photo-thermal and medicine integrated treatment of imaging guidance.

The invention discloses a precipitation method for synthesizing tin selenide powder at room temperature. The precipitation method comprises the following steps: dissolving tartaric acid, EDTA (Ethylene Diamine Tetraacetic Acid) or citric acid in distilled water; adding tin selenide and stirring till dissolution to obtain a solution A; adding selenium dioxide, sodium hydroxide and sodium borohydride into the distilled water in sequence to obtain a solution B; slowly adding the solution A into the solution B; stirring for 10 to 20 minutes; performing centrifugal separating, and collecting a sample; then, placing the sample into a drying oven for drying; then, naturally cooling to room temperature; drying to obtain black tin selenide powder. In the entire production process, raw materials andthe produced solutions are easy to treat and free from pollution; the method has the advantages of low preparation cost, simple operation process, short experiment time and high repeatability, and high-purity tin selenide powder can be prepared.