The invention relates to the technical field of lasers, in particular to an electro-absorption modulated
laser which comprises a substrate and an epitaxial layer, the epitaxial layer sequentially comprises a buffer layer, a bottom DBR layer, a lower limiting layer, an active area, an upper limiting layer and an insulation limiting layer from bottom to top, and the insulation limiting layer is made of
tin selenium. A limiting hole used for
laser output is etched in the insulation limiting layer. According to the application, oxidation limitation, structure optimization and
process innovation are replaced by topological limitation, a traditional VCSEL, an EAM-VCSEL, a
silicon light scheme and an electro-absorption modulated
laser (EML) are comprehensively surpassed in core dimensions such as performance, reliability, integration level and
power consumption, the scheme is particularly adapted to the requirements of 1.6 T / 3.2 T
high density, low
power consumption and wide temperature range of an AI
data center, meanwhile, the scheme is compatible with an
access network 1310 nm
wave band, and the application range is wide. The method is a full-scene laser communication scheme capable of covering short-distance
interconnection and middle-distance transmission.