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Tin selenide thin film transverse thermoelectric effect-based light and heat detector

A thermal detector and transverse thermoelectric technology, which is applied in the manufacture/processing of thermoelectric devices, materials for lead-out wires of thermoelectric devices, ion implantation plating, etc., can solve the problems of detector performance improvement, high cost, detection element preparation process, etc. cumbersome process and other issues, to achieve the effect of low cost, simple structure, and simple preparation process

Active Publication Date: 2018-01-26
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a light and heat detector based on the transverse pyroelectric effect of tin selenide thin film, so as to solve the problem that the performance of the existing detector needs to be improved under continuous laser irradiation, and the preparation process of the detection element is cumbersome and the cost is high.

Method used

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  • Tin selenide thin film transverse thermoelectric effect-based light and heat detector
  • Tin selenide thin film transverse thermoelectric effect-based light and heat detector
  • Tin selenide thin film transverse thermoelectric effect-based light and heat detector

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Embodiment 1

[0031] Such as figure 1 Shown, the present invention is based on the photoelectricity of tin selenide thin film lateral pyroelectric effect, thermal detector comprises detection element, metal electrode 4 and metal lead 5, and detection element comprises oxide single crystal substrate 2 and is deposited on oxide single crystal substrate The tin selenide film 1 on the 2 has two metal electrodes 4 symmetrically arranged on the upper surface of the tin selenide film 1, and the two metal electrodes 4 are connected to the input terminal of the voltmeter 7 through the metal lead 5. Use the probe beam 6 to irradiate the surface of the detector, and use the voltmeter 7 to record the change of its voltage signal.

[0032] The preparation method of the light and heat detector comprises the following steps:

[0033] (1) Preparation of detection element

[0034] LaAlO tilted at c-axis 10° 3 Prepare a layer of tin selenide film with a thickness of 100nm and c-axis oblique growth on the ...

Embodiment 2

[0041] The surface of the detector prepared in embodiment 1 is irradiated by pulsed light with a wavelength of 308nm, the output voltage signal is recorded with an oscilloscope, and the detector output voltage-time response curve is drawn, such as image 3 shown.

[0042] Depend on image 3 It can be seen that when the pulse light energy irradiated on the film is 27.5 mJ (energy density 0.55mJ / mm 2 , spot area 5×10mm 2 ), the amplitude of the output voltage signal is 1.1V, and the detection sensitivity is 40 mV / mJ.

Embodiment 3

[0044] The continuous laser light with wavelength of 532nm and 808nm is used to irradiate the center position between the two electrodes on the surface of the detector prepared in Example 1 respectively, record the output voltage signal with a voltmeter, and draw the detector output voltage-time response curve, as Figure 4 shown. Depend on Figure 4 It can be seen that when the irradiation laser power is 50mW, the amplitudes of the two output voltage signals are 70mV and 46mV, respectively, and the corresponding detection sensitivities are 1.4V / W and 0.92V / W, which are much higher than other oxides designed based on the transverse thermoelectric effect. The detection sensitivity of the object photodetector.

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Abstract

The present invention provides a tin selenide thin film transverse thermoelectric effect-based light and heat detector. The detector comprises a detecting element, metal electrodes and a metal lead; the detecting element comprises an oxide single-crystal substrate and a tin selenide single-crystal thin film which is deposited on the oxide single-crystal substrate and is obtained through c-axis inclined growth; and the two metal electrodes are symmetrically arranged on the upper surface of the tin selenide single-crystal thin film, wherein the metal electrodes are connected with the input end of a voltmeter through metal conductors. According to the tin selenide thin film transverse thermoelectric effect-based light and heat detector of the invention, a binary material, that is, tin selenide, is deposited on the substrate through a pulsed laser deposition technology, so that the tin selenide single-crystal thin film formed through c-axis inclined growth is obtained; and the light and heat detector is fabricated through using the lateral thermoelectric effect of the tin selenide single-crystal thin film. The detecting element of the detector has the advantages of simple structure, noneed for cooling and pressure biasing components, simple preparation process and low cost. The light and heat detector is wide in response band, is high in detection sensitivity, has excellent detecting performance under continuous light irradiation, and can achieve simultaneous light and heat detection.

Description

technical field [0001] The invention relates to a light and heat detector, in particular to a light and heat detector based on the transverse pyroelectric effect of a tin selenide thin film. Background technique [0002] When a beam of light or a heat source is irradiated on the surface of the film with a c-axis tilt structure (that is, the c-axis direction of the film and the normal direction of the film surface have an included angle), a temperature difference Δ will be established immediately between the upper and lower surfaces of the film T z , if the Seebeck coefficient of the film material is anisotropic, an open circuit voltage signal perpendicular to the temperature difference can be detected on the film surface. The thermoelectric effect in which the temperature difference and the voltage generated by the temperature difference are perpendicular to each other is called the transverse thermoelectric effect. [0003] Based on the transverse pyroelectric effect, lig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/34C23C14/06H10N10/852H10N10/01
Inventor 闫国英候帅航王沁怡王凌云王淑芳傅广生
Owner HEBEI UNIVERSITY
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