Antimony telluride photoelectric detector and production method thereof

A photodetector and photodetection technology, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems of insufficient response rate and insufficient response band, and achieve high electron mobility and preparation cycle short effect

Active Publication Date: 2021-04-20
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the problems of the existing antimony telluride photodetection device with

Method used

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  • Antimony telluride photoelectric detector and production method thereof
  • Antimony telluride photoelectric detector and production method thereof
  • Antimony telluride photoelectric detector and production method thereof

Examples

Experimental program
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Example Embodiment

[0031]Example 1

[0032]This example is PBPC / SB2TE3 / N-Si heterogeneous line thin film photodetector preparation method is described, where SB2TE3As the light absorbing material, N-Si is used as a substrate and SB2TE3The heterojunction in the vertical direction is formed, and the PBPC is used as the light enhancement absorbing material.

[0033]Such asfigure 1 As shown in Example 1, a method of preparing a poor antimerium photodetection device, specifically comprising the steps of:

[0034]S01: Steaming SB on the substrate2TE3Catalytic layer of film growth; wherein the substrate is any of the oxa wafers, silicon wafers, fluorine crystal mica, and quartz, which uses 1.5 cm × 1.5 cm N-Si as a substrate, and the substrate Put acetone, alcohol, deionized water, each of which is 30 min, removes the organic and inorganic impurities of the substrate surface, and then put it in the UV cleaning machine for 30 minutes, so that the substrate is hydrophilic.

[0035]S02: Volume Sb on a substrate having a...

Example Embodiment

[0048]Example 2

[0049]This embodiment is SB2TE3 / C60 / CUPC heterogeneous film photodetector preparation, SB2TE3As a light absorbing material, C60SB2TE3Forming heterojunction in the vertical direction, CUPC as a light enhancement absorption material, such asfigure 1 As shown in Example 2, a method of preparing a poor antimerium photodetection device, specifically comprising the steps of:

[0050]S11: Voltage deposition SB on the substrate2TE3The catalytic layer of film growth; wherein the substrate is any of the oxa wafers, silicon wafers, fluorine crystal mica, and quartz, which uses 1.5 cm × 1.5 cm silicon wafer as a substrate, and the substrate Put acetone, alcohol, deionized water, each of which is 30 min, removes the organic and inorganic impurities of the substrate surface, and then put it in the UV cleaning machine for 30 minutes, so that the substrate is hydrophilic.

[0051]S12: Steaming Sb on a substrate having a catalytic layer2TE3film;

[0052]S13: For SB2TE3Film is annealing;

[0053...

Example Embodiment

[0063]Example 3

[0064]In this example, the present embodiment has the same inventive concept, on the basis of the first embodiment, a poor antimerride photoelectric detection device, such asFigure 5 As shown, the device is from the bottom to the upper, including: substrate, Sb2TE3Film layer, first organic material layer and electrode. Where the substrate is N-Si, the first organic material is PBPC, Sb2TE3Film forms SB with the first organic material2TE3 / PBPC heterojunction, and a plurality of Au electrodes are vaporized at both ends of heterogenesis (N-Si substrate, PBPC film) to obtain graphical PBPC / SB2TE3 / N-Si heterojunction photoelectric detection unit device.

[0065]It should be noted,Figure 5 Of the N-Si substrate, 2 is SB2TE3 / PBPC heterojunction, 3 is AU electrodes.

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Abstract

The invention discloses an antimony telluride photoelectric detection device and a production method thereof. The method comprises the following steps: evaporating a catalyst layer grown by a Sb2Te3 film on a substrate; evaporating the Sb2Te3 film on the substrate with the catalyst layer; carrying out annealing treatment on the Sb2Te3 film; evaporating a first organic material on the annealed Sb2Te3 film to form an enhanced absorption layer, and forming a substrate material/Sb2Te3/first organic material heterojunction; and producing electrodes at the two ends of the heterojunction to obtain the antimony telluride photoelectric detector or a line array, wherein the absorption in a visible light near-infrared band is obviously improved, and high electron mobility is possessed. Compared with chemical vapor deposition (CVD), molecular beam epitaxy (MBE), magnetron sputtering and other coating methods, the method has the advantages that a production period is short, the operation is simple, the produced detector has excellent performance, and reference and theoretical practice bases are provided for research of novel low-dimensional materials and topological insulator photoelectric detectors.

Description

technical field [0001] The invention relates to the technical field of preparation and application of topological insulator photoelectric materials, in particular to an antimony telluride photodetection device and a preparation method thereof. Background technique [0002] In recent years, with the third generation of topological insulators (Bi 2 Te 3 、 Bi 2 Se 3 , Sb 2 Te 3 ) Theoretical verification and laboratory synthesis, and the resulting new physical effects (quantum Hall effect, quantum spin Hall effect, reversible phase transition, etc.) have attracted widespread attention of scientists. It is particularly worth noting that, unlike the special energy band structure of semiconductors and insulators, the interior is an insulator with a band gap, while the surface is a metal state without a gap. And the surface state is determined by the topology of its bulk electronic state and protected by symmetry. This special structure allows topological insulators to have ...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42
CPCY02E10/549
Inventor 周泓希王军刘澍锴刘贤超匡云帆张兴超张超毅苟君
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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