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Antimony telluride photoelectric detector and production method thereof

A photodetector and photodetection technology, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems of insufficient response rate and insufficient response band, and achieve high electron mobility and preparation cycle short effect

Active Publication Date: 2021-04-20
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the problems of the existing antimony telluride photodetection device with insufficient response band and high response rate, and provide an antimony telluride photodetection device and its preparation method

Method used

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  • Antimony telluride photoelectric detector and production method thereof
  • Antimony telluride photoelectric detector and production method thereof
  • Antimony telluride photoelectric detector and production method thereof

Examples

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Embodiment 1

[0032] In this embodiment, PbPc / Sb 2 Te 3 / n-Si heterojunction linear array thin film photodetector preparation method is described, in which Sb 2 Te 3 As a light absorbing material, n-Si is used as the substrate and Sb 2 Te 3 A heterojunction in the vertical direction is formed, and PbPc acts as a light-enhanced absorbing material.

[0033] Such as figure 1 Shown, in embodiment 1, a kind of preparation method of antimony telluride photodetection device specifically comprises the following steps:

[0034] S01: Evaporate Sb on the substrate 2 Te 3 The catalytic layer of film growth; wherein, the substrate is any one of silicon oxide wafer, silicon wafer, fluorine phlogopite, and quartz, and the present embodiment adopts n-Si of 1.5cm×1.5cm as the substrate, and the substrate Put in acetone, alcohol, and deionized water for 30 minutes to ultrasonically remove organic and inorganic impurities on the surface of the substrate, and then put it in a UV cleaning machine for 30...

Embodiment 2

[0049] In this example, Sb 2 Te 3 / C 60 / CuPc heterojunction thin film photodetectors were prepared, in which Sb 2 Te 3 As a light absorbing material, C 60 with Sb 2 Te 3 Forming a heterojunction in the vertical direction, CuPc acts as a light-enhanced absorbing material, such as figure 1 Shown, in embodiment 2, a kind of preparation method of antimony telluride photodetection device specifically comprises the following steps:

[0050] S11: Evaporate Sb on the substrate 2 Te 3 The catalytic layer of film growth; wherein, the substrate is any one of silicon oxide wafer, silicon wafer, fluorine phlogopite, and quartz, and the present embodiment adopts an oxygen silicon wafer of 1.5cm×1.5cm as the substrate, and Put in acetone, alcohol, and deionized water for 30 minutes to ultrasonically remove organic and inorganic impurities on the surface of the substrate, and then put it in a UV cleaning machine for 30 minutes to make the surface of the substrate hydrophilic.

[00...

Embodiment 3

[0064] This embodiment has the same inventive concept as Embodiment 1. On the basis of Embodiment 1, a kind of antimony telluride photodetection device is provided, such as Figure 5 As shown, the device includes from bottom to top: substrate, Sb 2 Te 3 A thin film layer, a first organic material layer and an electrode. The substrate is n-Si, the first organic material is PbPc, Sb 2 Te 3 thin film with the first organic material to form Sb 2 Te 3 / PbPc heterojunction, and vapor-deposit multiple Au electrodes on both ends of the heterojunction (n-Si substrate, PbPc film) to obtain patterned PbPc / Sb 2 Te 3 / n-Si heterojunction photodetection unit device.

[0065] It should be noted, Figure 5 Among them, 1 is n-Si substrate, 2 is Sb 2 Te 3 / PbPc heterojunction, 3 is Au electrode.

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Abstract

The invention discloses an antimony telluride photoelectric detection device and a production method thereof. The method comprises the following steps: evaporating a catalyst layer grown by a Sb2Te3 film on a substrate; evaporating the Sb2Te3 film on the substrate with the catalyst layer; carrying out annealing treatment on the Sb2Te3 film; evaporating a first organic material on the annealed Sb2Te3 film to form an enhanced absorption layer, and forming a substrate material / Sb2Te3 / first organic material heterojunction; and producing electrodes at the two ends of the heterojunction to obtain the antimony telluride photoelectric detector or a line array, wherein the absorption in a visible light near-infrared band is obviously improved, and high electron mobility is possessed. Compared with chemical vapor deposition (CVD), molecular beam epitaxy (MBE), magnetron sputtering and other coating methods, the method has the advantages that a production period is short, the operation is simple, the produced detector has excellent performance, and reference and theoretical practice bases are provided for research of novel low-dimensional materials and topological insulator photoelectric detectors.

Description

technical field [0001] The invention relates to the technical field of preparation and application of topological insulator photoelectric materials, in particular to an antimony telluride photodetection device and a preparation method thereof. Background technique [0002] In recent years, with the third generation of topological insulators (Bi 2 Te 3 、 Bi 2 Se 3 , Sb 2 Te 3 ) Theoretical verification and laboratory synthesis, and the resulting new physical effects (quantum Hall effect, quantum spin Hall effect, reversible phase transition, etc.) have attracted widespread attention of scientists. It is particularly worth noting that, unlike the special energy band structure of semiconductors and insulators, the interior is an insulator with a band gap, while the surface is a metal state without a gap. And the surface state is determined by the topology of its bulk electronic state and protected by symmetry. This special structure allows topological insulators to have ...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42
CPCY02E10/549
Inventor 周泓希王军刘澍锴刘贤超匡云帆张兴超张超毅苟君
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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